Patent US5641545A successfully refreshed from Google Patents.
US5641545A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method to deposit highly conformal CVD films
Assignee: Micron Technology Inc
•
Filing: 1995-06-07
•
Granted: 1997-06-24
•
Expires: 2015-06-07
Abstract
Abstract A method for chemical vapor deposition onto high aspect ratio features. Process gases including a reactant species are supplied to the surface and sufficient primary energy is supplied to the surface so as to cause the reactant species to deposit on the surface. Additional energy is supplied, preferably in the form of optical energy, that is tuned to be captured by the patterned features so as to slow the deposition rate preferentially on the patterned features.
Inventors
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 15:02
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32321; H01J37/32339; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/44; C23C16/48; C23C16/482; C23C16/50; C23C16/517; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/098; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/332; H01J2237/3322; H01J2237/3327
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
90 words
A method for chemical vapor deposition of a film onto a surface of a substrate having patterned features formed thereon, the method comprising the steps of: supplying reactant gasses to the surface, wherein said reactant gasses have a negative activation energy; supplying sufficient first energy to the surface so as to cause the reactant gasses to form a reactant material on the surface at a nominal deposition rate; and supplying additional energy selected to preferentially heat the patterned features so as to slow the deposition rate on the patterned features.
Claim 2
Independent Claim
90 words
A method for chemical vapor deposition of a film onto a surface of a substrate having patterned features formed thereon, the method comprising the steps of: supplying reactant gasses to the surface, wherein said reactant gasses have a negative activation energy; supplying sufficient first energy to the surface so as to cause the reactant gasses to form a reactant material on the surface at a nominal deposition rate; and supplying additional energy selected to preferentially heat the patterned features so as to slow the deposition rate on the patterned features.
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein the first energy is supplied by a radio frequency plasma and thermal heating.
Claim 4
Dependent Claim
27 words
The method of claim 1 wherein the additional energy is electromagnetic energy having a wavelength that (heats) is absorbed by the patterned features more than the substrate.
Claim 5
Dependent Claim
19 words
The method of claim 1 wherein the additional energy comprises electromagnetic energy incident with the surface at 90 degrees.
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the additional energy comprises electromagnetic energy incident with the surface at an oblique angle.
Claim 7
Dependent Claim
29 words
The method of claim 1 wherein the additional energy has a wavelength selected to desorb reactant species in the reactant gasses from the reactant material forming on the surface.
Claim 8
Dependent Claim
11 words
The method of claim 1 wherein the reactant gasses comprise tetraethylorthosilicate.
Claim 9
Independent Claim
110 words
A method for controlling deposition rate of a chemical vapor deposited (CVD) film onto a wafer, the wafer comprising a substrate having an upper surface and patterned features formed on the upper surface, the method comprising the steps of: supplying a reactant gas to the wafer, wherein the reactant gas comprises a material having a negative activation energy; supplying sufficient energy to the wafer so as to cause the reactant gas to deposit a reactant film on the upper surface; and selectively heating the patterned features to a higher temperature than the upper surface so as to inhibit a rate at which the reactant film deposits on the patterned features.
Claim 10
Independent Claim
110 words
A method for controlling deposition rate of a chemical vapor deposited (CVD) film onto a wafer, the wafer comprising a substrate having an upper surface and patterned features formed on the upper surface, the method comprising the steps of: supplying a reactant gas to the wafer, wherein the reactant gas comprises a material having a negative activation energy; supplying sufficient energy to the wafer so as to cause the reactant gas to deposit a reactant film on the upper surface; and selectively heating the patterned features to a higher temperature than the upper surface so as to inhibit a rate at which the reactant film deposits on the patterned features.
References Cited (Backward Citations)
US4699801A
Cited
US5462767A
Cited
US4849260A
Cited
US4872947A
Cited
US5393577A
Cited
US5290358A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-06-23 | 2000-12-23 | 2001-06-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-23 | 2004-12-23 | 2005-06-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-23 | 2008-12-23 | 2009-06-24 | $7700.00 | Window Closed / Lapsed |