Magnetoresistive memory using large fractions of memory cell films for data storage

Claim 1

A ferromagnetic thin-film based digital memory using magnetoresistive sensing, said memory comprising: a first state determination line structure having a first state determination line structure pair of end terminals adapted to conduct electrical current in at least one direction, said first state determination line structure end terminals having electrically connected in series therebetween a composite line structure with at least selected portions thereof having a structure comprising: an intermediate layer of a kind of separating material, said intermediate layer having two major surfaces on opposite sides thereof such that said major surfaces are separated by a separating layer thickness, and a memory film on each side of said intermediate layer major surfaces with said memory film being of a magnetoresistive, anisotropic, ferromagnetic material; a plurality of word line structures each having a pair of word line end terminals adapted to conduct electrical current in at least one direction with each of said pairs of word line end terminals having an electrical conductor electrically connected therebetween which is located across an electrical insulating layer from said memory film on one of said major surfaces of said intermediate layer at a corresponding one of said composite line structure selected portions; a first plurality of storage film cells each of a ferromagnetic material and each positioned across an electrical insulating layer from a corresponding one of said word line structure electrical conductors on a side thereof opposite a corresponding one of said composite line structure selected portions, said first plurality of storage film cells each having an extent which is greater in a greatest extent direction than that extent thereof in a lesser extent direction and positioned such that each has said greater extent direction thereof substantially parallel to a portion of that path followed by said composite line structure in extending between said first state determination line structure end terminals; and a first bit line structure having a first bit line structure pair of end terminals adapted to conduct electrical current in at least one direction with each of said first bit line structure end terminals having an electrical conductor electrically connected therebetween which is located across from each of said first plurality of storage film cells on a side thereof opposite that side closest to said word line structure corresponding thereto.