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US5635730A
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Superconducting oxide thin film device
Assignee: Advanced Mobile Telecommunication Technology Inc
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Filing: 1995-06-06
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Granted: 1997-06-03
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Expires: 2015-06-06
Abstract
Abstract A superconducting oxide thin film device is composed of a LaAlO 3 substrate and a YBCO thin film with a BaCeO 3 buffer layer disposed between the two. The adhesion between the film and the substrate is increased by the presence of the buffer layer. The buffer layer also inhibits peeling of the film from the substrate and diffusion of Ba from the film into the substrate.
Inventors
- 👤 Nobuyoshi Sakakibara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:40
CPC Classifications
H; H10; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632
Claims Analysis
Total Claims: 20
Claim 1
Independent Claim
56 words
An oxide film device capable of superconductive operation, said device comprising: a dielectric substrate; a buffer layer disposed on said substrate, said buffer layer including Ba, Ce and O as constitutive elements; and an oxide film disposed on said buffer layer, said film being made of a material capable of superconductive operation, said material including Ba.
Claim 2
Dependent Claim
56 words
An oxide film device capable of superconductive operation, said device comprising: a dielectric substrate; a buffer layer disposed on said substrate, said buffer layer including Ba, Ce and O as constitutive elements; and an oxide film disposed on said buffer layer, said film being made of a material capable of superconductive operation, said material including Ba.
Claim 3
Dependent Claim
16 words
The oxide film device of claim 1, in which said buffer layer includes BaCeO 3 .
Claim 4
Dependent Claim
43 words
The oxide film device of claim 1 wherein: said dielectric substrate is a monocrystalline substrate; and said buffer layer has a crystal structure epitaxially grown on said dielectric substrate which functions as a crystal seed structure for epitaxial growth of said oxide film.
Claim 5
Dependent Claim
16 words
The oxide film device of claim 4, wherein said buffer layer includes Ba, Ce and O.
Claim 6
Dependent Claim
16 words
The oxide film device of claim 4, in which said buffer layer includes BaCeO 3 .
Claim 7
Dependent Claim
26 words
The oxide film device of claim 3 wherein: said dielectric substrate is a monocrystalline LaAlO 3 substrate; and said oxide film is a yttrium-based oxide film.
Claim 8
Dependent Claim
16 words
The oxide film device of claim 6, wherein said buffer layer includes Ba, Ce and O.
Claim 9
Dependent Claim
16 words
The oxide film device of claim 7, in which said buffer layer includes BaCeO 3 .
Claim 10
Dependent Claim
126 words
The oxide film device of claim 1 wherein: said dielectric substrate is a monocrystalline LaAlO 3 substrate; said oxide film is a yttrium-based oxide film; and crystal planes are defined at an interface between said monocrystalline LaAlO 3 substrate and said BaCeO 3 buffer layer and at an interface between said buffer layer and said yttrium-based oxide film so that a shape of a (001) plane of said LaAlO 3 substrate is that of a face of a pseudo-cubic crystal, a shape of a (001) plane of said yttrium-based oxide film is that of a face of a rhombic crystal, and a shape of one of a (112) plane and a (200) plane of said buffer layer is that of a face of a tetragonal crystal.
Claim 11
Dependent Claim
16 words
The oxide film device of claim 1, wherein said oxide film is a superconducting oxide film.
Claim 12
Dependent Claim
87 words
An oxide film device comprising: a dielectric substrate; and buffer means disposed on said dielectric substrate; and an oxide film disposed on said buffer layer, said film being made of a material capable of superconductive operation, said material including Ba, Ce and O; wherein said buffer means is for forming an adhesive bond with said oxide film on a first side and with said dielectric substrate on a second side and for substantially preventing diffusion of said Ba atoms from said oxide film to said dielectric substrate.
Claim 13
Dependent Claim
87 words
An oxide film device comprising: a dielectric substrate; and buffer means disposed on said dielectric substrate; and an oxide film disposed on said buffer layer, said film being made of a material capable of superconductive operation, said material including Ba, Ce and O; wherein said buffer means is for forming an adhesive bond with said oxide film on a first side and with said dielectric substrate on a second side and for substantially preventing diffusion of said Ba atoms from said oxide film to said dielectric substrate.
Claim 14
Dependent Claim
15 words
The oxide film device of claim 11, in which said layer includes BaCeO 3 .
Claim 15
Dependent Claim
47 words
The oxide film device of claim 11 wherein: said dielectric substrate is a monocrystalline substrate; and said buffer means includes a layer which has a crystal structure epitaxially grown on said dielectric substrate which functions as a crystal seed structure for epitaxial growth of said oxide film.
Claim 16
Dependent Claim
26 words
The oxide film device of claim 13 wherein: said dielectric substrate is a monocrystalline LaAlO 3 substrate; and said oxide film is a yttrium-based oxide film.
Claim 17
Dependent Claim
123 words
The oxide film device of claim 11 wherein: said dielectric substrate is a monocrystalline LaAlO 3 substrate; said oxide film is a yttrium-based oxide film; and crystal planes are defined at an interface between said monocrystalline LaAlO 3 substrate and said buffer means and at an interface between said buffer means and said yttrium-based oxide film so that a shape of a (001) plane of said LaAlO 3 substrate is that of a face of a pseudo-cubic crystal, a shape of a (001) plane of said yttrium-based oxide film is that of a face of a rhombic crystal, and a shape of one of a (112) plane and a (200) plane of said buffer means is that of a face of tetragonal crystal.
Claim 18
Dependent Claim
16 words
The oxide film device of claim 11, wherein said oxide film is a superconducting oxide film.
Claim 19
Dependent Claim
15 words
The oxide film device of claim 9, wherein said buffer layer includes BaCeO 3 .
Claim 20
Dependent Claim
19 words
The oxide film device of claim 15, wherein said buffer means has a layer which includes BaCeO 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-06-02 | 2000-12-02 | 2001-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-06-02 | 2004-12-02 | 2005-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-06-02 | 2008-12-02 | 2009-06-03 | $7700.00 | Window Closed / Lapsed |