US5629890A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
Assignee: Winbond Electronics Corp
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Filing: 1994-09-14
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Granted: 1997-05-13
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Expires: 2014-09-14
Abstract
Abstract An integrated circuit which operates to store an input analog signal within an analog storage device such as an EEPROM is disclosed. Initially, a target voltage is determined for applying to the memory cell with the target voltage set to about 90% of the input analog signal voltage. A high voltage ramp is applied to the memory cell to set the voltage of the memory cell to the target voltage. A read operation is simultaneously performed while the high voltage ramp is applied to detect the voltage stored on the cell and to terminate the application of the high voltage ramp once the target voltage is reached. Thereafter, a normal read operation is performed on the memory cell to detect the actual voltage of the cell. A new target voltage is determined based upon the actual voltage of the memory cell and the input analog signal voltage. The high voltage ramp is again connected to the memory cell to set the cell to the new target voltage while a simultaneous read operation is performed. The "read-while-writing" operations are performed a predetermined number of times to achieve precise programming of the cell. Different embodiments are disclosed.
Inventors
- 👤 Lawrence D. Engh
- 👤 Trevor Blyth
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 12:07
CPC Classifications
G; G11; G11C; G11C16/00; G11C16/02; G11C27/00; G11C27/005; G11C11/00; G11C11/56; G11C11/5621; G11C11/5628; G11C11/5642; G11C2211/00; G11C2211/56; G11C2211/562; G11C2211/5624; G11C2211/564; G11C2211/5642; G11C7/00; G11C7/16
Claims Analysis
Total Claims: 60
Claim 1
Independent Claim
173 words
In an analog memory device, a method for storing a voltage level within a storage element of said device, said method comprising the steps of: a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) until the difference between the stored voltage and the received voltage level is less than a predetermined value.
Claim 2
Dependent Claim
173 words
In an analog memory device, a method for storing a voltage level within a storage element of said device, said method comprising the steps of: a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) until the difference between the stored voltage and the received voltage level is less than a predetermined value.
Claim 3
Independent Claim
236 words
An apparatus for storing an analog signal as a difference voltage between a pair of storage elements, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to each storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level, of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of each storage element matches the target voltage; e) means for reading a resulting stored voltage of each storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling means c)-f) to operate a predetermined number of times on both storage cells; h) means for comparing a resulting voltage difference between the two storage elements with the received voltage level to determine any difference there between; and i) means for adjusting the voltage stored within one of the two storage elements by an amount sufficient to decrease any difference between the received voltage level and the difference voltage between the two storage cells.
Claim 4
Independent Claim
236 words
An apparatus for storing an analog signal as a difference voltage between a pair of storage elements, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to each storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level, of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of each storage element matches the target voltage; e) means for reading a resulting stored voltage of each storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling means c)-f) to operate a predetermined number of times on both storage cells; h) means for comparing a resulting voltage difference between the two storage elements with the received voltage level to determine any difference there between; and i) means for adjusting the voltage stored within one of the two storage elements by an amount sufficient to decrease any difference between the received voltage level and the difference voltage between the two storage cells.
Claim 5
Independent Claim
238 words
An apparatus for storing an analog signal as a difference voltage between a pair of non-volatile storage elements, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to each storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of each storage element matches the target voltage; e) means for reading a resulting stored voltage of each storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling means c)-f) to operate a predetermined number of times on both storage cells; h) means for comparing a resulting voltage difference between the two storage elements with the received voltage level to determine any difference there between; and i) means for adjusting the voltage level stored within one of the two storage elements by an amount sufficient to decrease any difference between the received voltage level and the difference voltage between the two storage cells.
Claim 6
Independent Claim
238 words
An apparatus for storing an analog signal as a difference voltage between a pair of non-volatile storage elements, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to each storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of each storage element matches the target voltage; e) means for reading a resulting stored voltage of each storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling means c)-f) to operate a predetermined number of times on both storage cells; h) means for comparing a resulting voltage difference between the two storage elements with the received voltage level to determine any difference there between; and i) means for adjusting the voltage level stored within one of the two storage elements by an amount sufficient to decrease any difference between the received voltage level and the difference voltage between the two storage cells.
Claim 7
Dependent Claim
174 words
In an analog memory device, a method for storing a voltage level within a non-volatile storage element of said device, said method comprising the steps of: a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) until the difference between the stored voltage and the received voltage level is less than a predetermined value.
Claim 8
Dependent Claim
174 words
In an analog memory device, a method for storing a voltage level within a non-volatile storage element of said device, said method comprising the steps of: a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) until the difference between the stored voltage and the received voltage level is less than a predetermined value.
Claim 9
Independent Claim
88 words
A method for storing an input voltage level within an analog memory storage element, said method comprising the steps of: applying a voltage ramp signal directly to the analog memory storage element for increasing a voltage level stored within the storage element toward the input voltage level while simultaneously reading and comparing a resulting voltage level within the storage element with the input voltage level; and terminating application of the voltage ramp signal to the storage element before the voltage level stored therein exceeds the input voltage level.
Claim 10
Independent Claim
88 words
A method for storing an input voltage level within an analog memory storage element, said method comprising the steps of: applying a voltage ramp signal directly to the analog memory storage element for increasing a voltage level stored within the storage element toward the input voltage level while simultaneously reading and comparing a resulting voltage level within the storage element with the input voltage level; and terminating application of the voltage ramp signal to the storage element before the voltage level stored therein exceeds the input voltage level.
Claim 11
Dependent Claim
16 words
The method of claim 5, whereto the analog memory storage element is an EEPROM storage element.
Claim 12
Independent Claim
91 words
An apparatus for storing an input voltage level within an analog memory storage element, said apparatus comprising: means for applying a voltage ramp signal directly to said analog memory storage element for increasing a voltage level stored within the storage element toward the input voltage level while simultaneously reading and comparing a resulting voltage level within said analog memory storage element with the input voltage level; and means for terminating application of the voltage ramp signal to the storage element before the voltage level stored therein exceeds the input voltage level.
Claim 13
Independent Claim
91 words
An apparatus for storing an input voltage level within an analog memory storage element, said apparatus comprising: means for applying a voltage ramp signal directly to said analog memory storage element for increasing a voltage level stored within the storage element toward the input voltage level while simultaneously reading and comparing a resulting voltage level within said analog memory storage element with the input voltage level; and means for terminating application of the voltage ramp signal to the storage element before the voltage level stored therein exceeds the input voltage level.
Claim 14
Dependent Claim
16 words
The apparatus of claim 7, wherein the analog memory storage element is an EEPROM storage element.
Claim 15
Independent Claim
180 words
An apparatus for storing a voltage level within a storage element, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) means for reading a resulting stored voltage of the storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling operation of means c)-f) to operate until the difference between the stored voltage and the received voltage level is less than a predetermined value.
Claim 16
Independent Claim
180 words
An apparatus for storing a voltage level within a storage element, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) means for reading a resulting stored voltage of the storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling operation of means c)-f) to operate until the difference between the stored voltage and the received voltage level is less than a predetermined value.
Claim 17
Dependent Claim
99 words
The apparatus of claim 9, wherein a pair of storage elements are provided for storing the input voltage level as a difference voltage, wherein means b)-g) operate on both of the two elements, and wherein the apparatus further includes: means for comparing a resulting voltage difference between the two storage elements with the input voltage level to determine any difference there between; and means for adjusting the voltage level stored within one of the two storage elements by an amount sufficient to decrease any difference between the input voltage level and the difference voltage between the two storage cells.
Claim 18
Dependent Claim
233 words
In an analog memory device, a method for storing an analog signal as a difference voltage between a pair of storage elements of said device, said method comprising the steps of: for each of said pair of storage elements a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) a predetermined number of times; then h) comparing a resulting voltage difference between the pair of storage elements with the received voltage level to determine any difference therebetween; and i) adjusting the voltage level stored within one of the two storage elements by an amount sufficient to decrease any difference between the received voltage level and the difference voltage between the two storage cells.
Claim 19
Dependent Claim
233 words
In an analog memory device, a method for storing an analog signal as a difference voltage between a pair of storage elements of said device, said method comprising the steps of: for each of said pair of storage elements a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) a predetermined number of times; then h) comparing a resulting voltage difference between the pair of storage elements with the received voltage level to determine any difference therebetween; and i) adjusting the voltage level stored within one of the two storage elements by an amount sufficient to decrease any difference between the received voltage level and the difference voltage between the two storage cells.
Claim 20
Dependent Claim
174 words
The method of claim 11, wherein step i) is performed by j) selecting one of the two storage elements for receiving an increased voltage; k) determining a new voltage level for applying to the selected storage element; l) determining a target voltage for applying to the selected storage element representative of a voltage level less than the new voltage level; m) applying a voltage ramp signal to the selected storage element for increasing an amount of voltage held in the selected storage element while simultaneously reading a voltage level of the selected storage element to determine whether the voltage of the selected storage element exceeds the target voltage; n) deactivating the voltage ramp signal when the voltage of the selected storage element exceeds the target voltage; o) reading a resulting stored voltage of the selected storage element; p) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage on the selected storage element and the new voltage level; and q) repeating steps m)-p) a predetermined number of times.
Claim 21
Independent Claim
88 words
A method for storing an input voltage level within a non-volatile analog memory storage element, said method comprising the steps of: applying a voltage ramp signal directly to the analog memory storage element for increasing a voltage level stored within the storage element toward the input voltage level while simultaneously reading and comparing a resulting voltage level within the storage element with the input voltage level; and terminating application of the voltage ramp to the storage element before the voltage level stored therein exceeds the input voltage level.
Claim 22
Independent Claim
88 words
A method for storing an input voltage level within a non-volatile analog memory storage element, said method comprising the steps of: applying a voltage ramp signal directly to the analog memory storage element for increasing a voltage level stored within the storage element toward the input voltage level while simultaneously reading and comparing a resulting voltage level within the storage element with the input voltage level; and terminating application of the voltage ramp to the storage element before the voltage level stored therein exceeds the input voltage level.
Claim 23
Dependent Claim
16 words
The method of claim 13, wherein the analog memory storage element is an EEPROM storage element.
Claim 24
Independent Claim
181 words
An apparatus for storing a voltage level within a non-volatile storage element, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) means for reading a resulting stored voltage of the storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling operation of means c)-f) to operate until the difference between the stored voltage and the received voltage level is less than a predetermined value.
Claim 25
Independent Claim
181 words
An apparatus for storing a voltage level within a non-volatile storage element, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) means for reading a resulting stored voltage of the storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling operation of means c)-f) to operate until the difference between the stored voltage and the received voltage level is less than a predetermined value.
Claim 26
Dependent Claim
99 words
The apparatus of claim 15, wherein a pair of storage elements are provided for storing the received voltage level as a difference voltage, wherein means b)-g) operate on both of the two elements, and wherein the apparatus further includes: means for comparing a resulting voltage difference between the two storage elements with the received voltage level to determine any difference there between; and means for adjusting the voltage level stored within one of the two storage elements by an amount sufficient to decrease any difference between the received voltage level and the difference voltage between the two storage cells.
Claim 27
Dependent Claim
160 words
In an analog memory device, a method for storing a voltage level within a storage element of said device, said method comprising the steps of: a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) a predetermined number of times.
Claim 28
Dependent Claim
160 words
In an analog memory device, a method for storing a voltage level within a storage element of said device, said method comprising the steps of: a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) a predetermined number of times.
Claim 29
Dependent Claim
14 words
The method of claim 17, wherein steps c)-f) are repeated four to six times.
Claim 30
Dependent Claim
53 words
The method of claim 17, further including an initial step of receiving a digital input signal and converting said digital input signal to a voltage level to be stored; and including a subsequent step of reading the resulting stored voltage of the storage element and converting said storage voltage to a digital signal.
Claim 31
Dependent Claim
20 words
The method of claim 17, wherein the target voltage is initially chosen to be 90% of the received voltage level.
Claim 32
Dependent Claim
45 words
The method of claim 20, wherein, after an initial target voltage is stored within the storage element, subsequent target voltage levels are set to a previous target voltage level plus 90% of any remaining difference between the received voltage level and the resulting voltage level.
Claim 33
Dependent Claim
99 words
The method of claim 17, wherein a pair of storage elements are provided for storing the received voltage level as a difference voltage, wherein steps b)-g) are applied to both of the two elements, and wherein the method further includes the steps of: h) comparing a resulting voltage difference between the two storage elements with the received voltage level to determine any difference therebetween; and i) adjusting the voltage stored within one of the two storage elements by an amount sufficient to decrease any difference between the received voltage level and the difference voltage between the two storage cells.
Claim 34
Dependent Claim
176 words
The method of claim 22, wherein step i) is performed by j) selecting one of the two storage elements for receiving an increased voltage; k) determining a new voltage level for applying to the selected storage element; l) determining a target voltage for applying to the selected storage element representative of a voltage level less than the new voltage level; m) applying a voltage ramp signal to the selected storage element for increasing an amount of voltage held in the selected storage element while simultaneously reading a voltage level of the selected storage element to determine whether the voltage level of the selected storage element exceeds the target voltage; n) deactivating the voltage ramp signal when the voltage level of the selected storage element exceeds the target voltage; o) reading a resulting stored voltage of the selected storage element; p) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage on the selected storage element and the new voltage level; and q) repeating steps m)-p) a predetermined number of times.
Claim 35
Dependent Claim
189 words
The method of claim 22, wherein step i) is performed by j) selecting one of the two storage elements for receiving an increased voltage; k) determining a new voltage level for applying to the selected storage element; l) determining a target voltage for applying to the selected storage element representative of a voltage level less than the new voltage level; m) applying a voltage ramp signal to the selected storage element for increasing an amount of voltage held in the selected storage element while simultaneously reading a voltage level of the selected storage element to determine whether the voltage level of the selected storage element exceeds the target voltage; n) deactivating the voltage ramp signal when the voltage level of the selected storage element exceeds the target voltage; o) reading a resulting stored voltage of the selected storage element; p) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage on the selected storage element and the new voltage level; and q) repeating steps m)-p) until the difference between the stored voltage and the received voltage level is less than a predetermined value.
Claim 36
Dependent Claim
161 words
In an analog memory device, a method for storing a voltage level within a non-volatile storage element of said device, said method comprising the steps of: a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) a predetermined number of times.
Claim 37
Dependent Claim
161 words
In an analog memory device, a method for storing a voltage level within a non-volatile storage element of said device, said method comprising the steps of: a) receiving a voltage level to be stored; b) determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) reading a resulting stored voltage of the storage element; f) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) repeating steps c)-f) a predetermined number of times.
Claim 38
Dependent Claim
14 words
The method of claim 25, wherein steps c)-f) are repeated four to six times.
Claim 39
Dependent Claim
53 words
The method of claim 25, further including an initial step of receiving a digital input signal and converting said digital input signal to a voltage level to be stored; and including a subsequent step of reading the resulting stored voltage of the storage element and converting said storage voltage to a digital signal.
Claim 40
Dependent Claim
20 words
The method of claim 25, wherein the target voltage is initially chosen to be 90% of the received voltage level.
Claim 41
Dependent Claim
45 words
The method of claim 28, wherein, after an initial target voltage is stored within the storage element, subsequent target voltage levels are set to a previous target voltage level plus 90% of any remaining difference between the received voltage level and the resulting voltage level.
Claim 42
Dependent Claim
99 words
The method of claim 25, wherein a pair of storage elements are provided for storing the received voltage level as a difference voltage, wherein steps b)-g) are applied to both of the two elements, and wherein the method further includes the steps of: h) comparing a resulting voltage difference between the two storage elements with the input voltage level to determine any difference therebetween; and i) adjusting the voltage stored within one of the two storage elements by an amount sufficient to decrease any difference between the receiver voltage level and the difference voltage between the two storage cells.
Claim 43
Dependent Claim
176 words
The method of claim 30, wherein step i) is performed by j) selecting one of the two storage elements for receiving an increased voltage; k) determining a new voltage level for applying to the selected storage element; l) determining a target voltage for applying to the selected storage element representative of a voltage level less than the new voltage level; m) applying a voltage ramp signal to the selected storage element for increasing an amount of voltage held in the selected storage element while simultaneously reading a voltage level of the selected storage element to determine whether the voltage level of the selected storage element exceeds the target voltage; n) deactivating the voltage ramp signal when the voltage level of the selected storage element exceeds the target voltage; o) reading a resulting stored voltage of the selected storage element; p) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage on the selected storage element and the new voltage level; and q) repeating steps m)-p) a predetermined number of times.
Claim 44
Dependent Claim
188 words
The method of claim 30, wherein step i) is performed by j) selecting one of the two storage elements for receiving an increased voltage; k) determining a new voltage level for applying to the selected storage element; l) determining a target voltage for applying to the selected storage element representative of a voltage level less than the new voltage level; m) applying a voltage ramp signal to the selected storage element for increasing an amount of voltage held in the selected storage element while simultaneously reading a voltage level of the selected storage element to determine whether the voltage level of the selected storage element exceeds the target voltage; n) deactivating the voltage ramp signal when the voltage level of the selected storage element exceeds the target voltage; o) reading a resulting stored voltage of the selected storage element; p) increasing the target voltage by an amount proportional to a difference between the resulting stored voltage on the selected storage element and the new voltage level; and q) repeating steps m)-p) until the difference between the stored voltage and the input voltage is less than a predetermined value.
Claim 45
Independent Claim
165 words
An apparatus for storing a voltage level within a storage element, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) means for reading a resulting stored voltage of the storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling means c)-f) to operate a predetermined number of times.
Claim 46
Independent Claim
165 words
An apparatus for storing a voltage level within a storage element, said apparatus comprising: a) means for receiving a voltage level to be stored; b) means for determining a target voltage for applying to the storage element representative of a voltage level less than the received voltage level; c) means for applying a voltage ramp signal to the storage element for increasing an amount of voltage held in the storage element while simultaneously reading a voltage level of the storage element to determine whether the voltage level of the storage element matches the target voltage; d) means for deactivating the voltage ramp signal when the voltage level of the storage element matches the target voltage; e) means for reading a resulting stored voltage of the storage element; f) means for increasing the target voltage by an amount proportional to a difference between the resulting stored voltage and the received voltage level; and g) means for controlling means c)-f) to operate a predetermined number of times.
Claim 47
Dependent Claim
19 words
The apparatus of claim 33, wherein the means for controlling controls means c)-f) to operate four to six times.
Claim 48
Dependent Claim
99 words
The apparatus of claim 33, wherein a pair of storage elements are provided for storing the input voltage level as a difference voltage, wherein means b)-g) operate on both of the two elements, and wherein the apparatus further includes: means for comparing a resulting voltage difference between the two storage elements with the input voltage level to determine any difference there between; and means for adjusting the voltage level stored within one of the two storage elements by an amount sufficient to decrease any difference between the input voltage level and the difference voltage between the two storage cells.
Claim 49
Dependent Claim
20 words
The apparatus of claim 33, wherein the target voltage is initially chosen to be 90% of the received voltage level.
Claim 50
Dependent Claim
45 words
The apparatus of claim 36, wherein, after an initial target voltage is stored within the storage element, subsequent target voltage levels are set to a previous target voltage level plus 90% of any remaining difference between the input voltage level and the resulting voltage level.
Claim 51
Dependent Claim
22 words
The apparatus of claim 33, wherein said means for determining a target voltage for applying to the storage element comprises an integrator.
Claim 52
Dependent Claim
17 words
The apparatus of claim 38, wherein the integrator includes a switched capacitor and an operational amplifier integrator.
Claim 53
Dependent Claim
19 words
The apparatus of claim 38, wherein said integrator sums an initial target voltage and any subsequently generated difference voltages.
Claim 54
Dependent Claim
20 words
The apparatus of claim 33, wherein said means for receiving the analog voltage signal comprises a track and hold circuit.
Claim 55
Dependent Claim
28 words
The apparatus of claim 37, wherein the sample and hold circuit samples the input analog signal voltage with an offset canceled switched capacitor and an operational amplifier circuit.
Claim 56
Dependent Claim
85 words
The apparatus of claim 33, wherein the means for applying the voltage ramp to the storage element and for increasing the amount of voltage held in the storage element comprises: a comparator receiving the target voltage and for continuously comparing said target voltage with the voltage level of the storage element; a latch receiving a signal from the comparator; and a high voltage ramp circuit connected to the latch for applying a continuously increasing voltage signal to said storage element until deactivated by said latch.
Claim 57
Dependent Claim
13 words
The apparatus of claim 43, wherein the comparator includes: a switched capacitor circuit.
Claim 58
Dependent Claim
13 words
The apparatus of claim 43, wherein said storage element is an EEPROM cell.
Claim 59
Dependent Claim
84 words
The apparatus of claim 45, wherein said EEPROM cell includes: a first transistor device having a drain connected to said high voltage ramp circuit, a gate connected to a select input line, and a source; and a second transistor device having a drain connected to the source of said first transistor, a gate connected to a dear input line and a source connected to an output line, wherein said source of said second transistor is also connected through a current source to a ground.
Claim 60
Dependent Claim
51 words
The apparatus of claim 43, further inducting a digital to analog converter for converting an input digital signal to an analog signal to be stored; and an analog to digital converter for receiving a stored voltage signal from said storage element and for converting said analog signal to a digital signal.
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