US5625233A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide
Assignee: International Business Machines Corp
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Filing: 1995-01-13
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Granted: 1997-04-29
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Expires: 2015-01-13
Abstract
Abstract The use of a bi-layer thin film structure consisting of aluminum or aluminide on a refractory metal layer as a diffusion barrier to oxygen penetration at high temperatures for preventing the electrical and mechanical degradation of the refractory metal for use in applications such as a capacitor electrode for high dielectric constant materials.
Inventors
- 👤 Cyril Cabral, Jr.
- 👤 Evan G. Colgan
- 👤 Alfred Grill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:12
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/047; H10W20/049; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10W20/40; H10W20/41; H10W20/425; H10D1/682
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
39 words
A multilayer diffusion barrier comprising: a conducting substrate, a layer of a refractory metal overlying said substrate, a layer of refractory metal aluminide overlying said refractory metal layer, and an aluminum oxide layer overlying said refractory metal aluminide layer.
Claim 2
Dependent Claim
39 words
A multilayer diffusion barrier comprising: a conducting substrate, a layer of a refractory metal overlying said substrate, a layer of refractory metal aluminide overlying said refractory metal layer, and an aluminum oxide layer overlying said refractory metal aluminide layer.
Claim 3
Dependent Claim
14 words
A multilayer diffusion barrier according to claim 1, wherein said conducting substrate is semiconducting.
Claim 4
Dependent Claim
31 words
A multilayer diffusion barrier according to claim 1, wherein said refractory metal is a member selected from the group consisting of Ta, Ti, Nb, V, Zr, Hf, Cr, Mo and W.
Claim 5
Dependent Claim
17 words
A multilayer diffusion barrier according to claim 1, wherein said refractory metal is a refractory metal silicide.
Claim 6
Dependent Claim
31 words
A multilayer diffusion barrier according to claim 1, wherein said conducting substrate is made of a material selected from the group consisting of single crystal silicon, polycrystalline silicon and amorphous silicon.
Claim 7
Dependent Claim
34 words
A multilayer diffusion barrier according to claim 1, wherein the refractory metal and the refractory metal aluminide are deposited by a physical vapor deposition technique, a chemical vapor deposition technique or an electroplating technique.
Claim 8
Dependent Claim
31 words
A multilayer diffusion barrier according to claim 1, wherein the refractory metal layer and the refractory metal aluminide layer have an annealed structure obtained after annealing at temperatures above 250° C.
Claim 9
Dependent Claim
30 words
A multilayer diffusion barrier according to claim 1, wherein said multilayer diffusion barrier has an annealed structure obtained after annealing in oxygen at temperatures between 400° C. and 800° C.
Claim 10
Dependent Claim
48 words
A capacitor comprising: a conducting substrate, a layer of a refractory metal or a refractory metal silicide overlying said substrate, a layer of refractory metal aluminide overlying said refractory metal or said refractory metal silicide layer, and a layer of aluminum oxide overlying said refractory metal aluminide layer.
Claim 11
Dependent Claim
48 words
A capacitor comprising: a conducting substrate, a layer of a refractory metal or a refractory metal silicide overlying said substrate, a layer of refractory metal aluminide overlying said refractory metal or said refractory metal silicide layer, and a layer of aluminum oxide overlying said refractory metal aluminide layer.
Claim 12
Dependent Claim
54 words
A capacitor comprising: a conducting substrate, a layer of a refractory metal overlying said substrate, a layer of refractory metal aluminide overlying said refractory metal layer, an aluminum oxide layer overlying said refractory metal aluminide layer, a metal contact seed layer, a layer of a high dielectric constant material, and a top electrode layer.
Claim 13
Dependent Claim
54 words
A capacitor comprising: a conducting substrate, a layer of a refractory metal overlying said substrate, a layer of refractory metal aluminide overlying said refractory metal layer, an aluminum oxide layer overlying said refractory metal aluminide layer, a metal contact seed layer, a layer of a high dielectric constant material, and a top electrode layer.
Claim 14
Dependent Claim
12 words
A capacitor according to claim 10, wherein said conducting substrate is semiconducting.
Claim 15
Dependent Claim
29 words
A capacitor according to claim 10, wherein said refractory metal is a member selected from the group consisting of Ta, Ti, Nb, V, Zr, Hf, Cr, Mo and W.
Claim 16
Dependent Claim
37 words
A capacitor according to claim 10, wherein said metal contact seed layer is formed of a material selected from the group consisting of Pt, Pd, Ir and Au on which the high dielectric constant layer is deposited.
Claim 17
Dependent Claim
15 words
A capacitor according to claim 10 wherein said refractory metal is a refractory metal silicide.
Claim 18
Dependent Claim
29 words
A capacitor according to claim 10, wherein said conducting substrate is made of a material selected from the group consisting of single crystal silicon, polycrystalline silicon and amorphous silicon.
Claim 19
Dependent Claim
32 words
A capacitor according to claim 10, wherein the refractory metal and the refractory metal aluminide are deposited by a physical vapor deposition technique, a chemical vapor deposition technique or an electroplating technique.
Claim 20
Dependent Claim
39 words
A capacitor according to claim 10, wherein the refractory metal layer and the refractory metal aluminide layer have an annealed structure obtained after annealing in He, Ar, N 2 , FG or O 2 at temperatures above 250° C.
Claim 21
Dependent Claim
32 words
A capacitor according to claim 10, wherein said high dielectric constant material is a Perovskite compound selected from the group consisting of PZT, PLZT and Ba x Sr 1-x TiO 3 .
Claim 22
Dependent Claim
47 words
A capacitor according to claim 11, wherein the high dielectric constant material the layer of refractory metal, and the layer of refractory metal alumninide deposited on the conducting substrate, having an annealed structure obtained after annealing in oxygen at a temperature between 400° C. and 800° C.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-28 | 2000-10-28 | 2001-04-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-28 | 2004-10-28 | 2005-04-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-28 | 2008-10-28 | 2009-04-29 | $7700.00 | Window Closed / Lapsed |