Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
64 words
A method of applying a silicon-oxide layer to a substrate, in which method a film of a solution of a polyorganosiloxane in a first solvent is applied to a surface of said substrate, whereafter the film is dried, thereby forming a polyorganosiloxane layer which is subsequently rinsed with a second solvent and then converted to said silicon-oxide layer by means of an UV-ozone treatment.
Claim 2
Independent Claim
64 words
A method of applying a silicon-oxide layer to a substrate, in which method a film of a solution of a polyorganosiloxane in a first solvent is applied to a surface of said substrate, whereafter the film is dried, thereby forming a polyorganosiloxane layer which is subsequently rinsed with a second solvent and then converted to said silicon-oxide layer by means of an UV-ozone treatment.
Claim 3
Dependent Claim
23 words
A method as claimed in claim 1, wherein a concentration of 0.05 to 5 wt. % polyorganosiloxane in the first solvent is used.
Claim 4
Dependent Claim
16 words
A method as claimed in claim 1, wherein a poly(dimethyl siloxane) is used as the polyorganosiloxane.
Claim 5
Dependent Claim
19 words
A method as claimed in claim 1, wherein a mixture comprising poly(methyl phenyl siloxane) is used as the polyorganosiloxane.
Claim 6
Dependent Claim
15 words
A method as claimed in claim 1, wherein the polyorganosiloxane comprises a silanol terminal group.
Claim 7
Dependent Claim
15 words
A method as claimed in claim 1, wherein the film is applied by spin coating.
Claim 8
Dependent Claim
16 words
A method as claimed in claim 1, wherein copper or molybdenum is used as the substrate.
Claim 9
Dependent Claim
18 words
A method as claimed in claim 2, wherein the silicon-oxide layer has a maximum thickness of 1 nm.
Claim 10
Dependent Claim
26 words
A method as claimed in claim 1, wherein the silicon-oxide layer is silanized with a bifunctional organochlorosilane or organoalkoxysilane with an amino group or epoxy group.
Claim 11
Dependent Claim
45 words
A method of manufacturing a semiconductor device comprising an integrated circuit which is encapsulated in a synthetic resin and which is mounted on a metal leadframe, said leadframe being previously provided with a silicon-oxide layer by means of a method as claimed in claim 1.
Claim 12
Dependent Claim
49 words
A method of manufacturing a passive plate of a liquid-crystal display device, in which method a layer of polyacrylate is provided with a silicon-oxide bonding layer and, subsequently, with an electrode layer of indium tin oxide, said silicon-oxide layer being manufactured by a method as claimed in claim 1.