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US5622896A Expired / Lapsed US ⏱️ 0.0 years remaining

Method of manufacturing a thin silicon-oxide layer

Assignee: NXP BV
•
Filing: 1995-10-16
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Granted: 1997-04-22
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Expires: 2015-10-16
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Abstract

Abstract A method of providing an ultra-thin (<1 nm) silicon-oxide layer on a substrate surface, for example, of a metal. A film of a solution of a polyorganosiloxane is applied to the substrate surface. After drying, the polyorganosiloxane is completely converted to said silicon-oxide layer by means of an UV-ozone treatment. Such an ultra-thin silicon-oxide layer sufficiently protects a metal surface against corrosion. In addition, the silicon-oxide layer can be silanized with the customary silane coupling agents to improve the bond with polymers. The method can very suitably be used, for example, to treat metal leadframes for ICs and to provide a bonding layer for indium tin oxide on polyacrylate for a passive plate of LC displays.

Inventors

  • 👤 Dirk M. Knotter
  • 👤 Jacob Wijdenes

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 10:47
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H10W70/458; C; C23; C23C; C23C18/00; C23C18/02; C23C18/12; C23C18/1204; C23C18/1208; C23C18/1212; C23C18/122; C23C18/1229; C23C18/1241; C23C18/14; C23C18/143; H10W74/00; H10W74/10; H10W74/111; H10W74/127; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49121

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 64 words
A method of applying a silicon-oxide layer to a substrate, in which method a film of a solution of a polyorganosiloxane in a first solvent is applied to a surface of said substrate, whereafter the film is dried, thereby forming a polyorganosiloxane layer which is subsequently rinsed with a second solvent and then converted to said silicon-oxide layer by means of an UV-ozone treatment.
Claim 2
Independent Claim 64 words
A method of applying a silicon-oxide layer to a substrate, in which method a film of a solution of a polyorganosiloxane in a first solvent is applied to a surface of said substrate, whereafter the film is dried, thereby forming a polyorganosiloxane layer which is subsequently rinsed with a second solvent and then converted to said silicon-oxide layer by means of an UV-ozone treatment.
Claim 3
Dependent Claim 23 words
A method as claimed in claim 1, wherein a concentration of 0.05 to 5 wt. % polyorganosiloxane in the first solvent is used.
Claim 4
Dependent Claim 16 words
A method as claimed in claim 1, wherein a poly(dimethyl siloxane) is used as the polyorganosiloxane.
Claim 5
Dependent Claim 19 words
A method as claimed in claim 1, wherein a mixture comprising poly(methyl phenyl siloxane) is used as the polyorganosiloxane.
Claim 6
Dependent Claim 15 words
A method as claimed in claim 1, wherein the polyorganosiloxane comprises a silanol terminal group.
Claim 7
Dependent Claim 15 words
A method as claimed in claim 1, wherein the film is applied by spin coating.
Claim 8
Dependent Claim 16 words
A method as claimed in claim 1, wherein copper or molybdenum is used as the substrate.
Claim 9
Dependent Claim 18 words
A method as claimed in claim 2, wherein the silicon-oxide layer has a maximum thickness of 1 nm.
Claim 10
Dependent Claim 26 words
A method as claimed in claim 1, wherein the silicon-oxide layer is silanized with a bifunctional organochlorosilane or organoalkoxysilane with an amino group or epoxy group.
Claim 11
Dependent Claim 45 words
A method of manufacturing a semiconductor device comprising an integrated circuit which is encapsulated in a synthetic resin and which is mounted on a metal leadframe, said leadframe being previously provided with a silicon-oxide layer by means of a method as claimed in claim 1.
Claim 12
Dependent Claim 49 words
A method of manufacturing a passive plate of a liquid-crystal display device, in which method a layer of polyacrylate is provided with a silicon-oxide bonding layer and, subsequently, with an electrode layer of indium tin oxide, said silicon-oxide layer being manufactured by a method as claimed in claim 1.

References Cited (Backward Citations)

US3389160A Cited
GB2081284A Cited
JPS6456315A Cited
EP0313095A2 Cited
JPH01194980A Cited
US5057336A Cited
US5336532A Cited
EP0462715B1 Cited
US5385739A Cited
US5387546A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-04-21 2000-10-21 2001-04-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-04-21 2004-10-21 2005-04-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-04-21 2008-10-21 2009-04-22 $7700.00 Window Closed / Lapsed

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