Patent US5622608A successfully refreshed from Google Patents.
US5622608A
Expired / Lapsed
US
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Process of making oxidation resistant high conductivity copper layers
Assignee: Research Foundation of the State University of New York
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Filing: 1994-05-05
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Granted: 1997-04-22
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Expires: 2014-05-05
Abstract
Abstract A process for preparing an oxidation resistant, electrically conductive copper layer on a substrate, and copper layers so formed, are disclosed. A copper layer is deposited onto the surface of a substrate, and subsequently annealed. The copper layer includes magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of the copper layer upon annealing.
Inventors
- 👤 William A. Lanford
- 👤 Peijun Ding
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 11:41
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4421; H10W20/4424; C; C23; C23C; C23C14/00; C23C14/06; C23C14/14; C23C14/18; C23C14/185; C23C14/58; H10W20/01; H10W20/031; H10W20/425; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K1/09; H05K3/00; H05K3/10; H05K3/14; H05K3/146
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
96 words
A process for forming an oxidation resistant, conductive copper layer on a substrate, comprising: depositing copper and magnesium onto the surface of a substrate to form a copper layer comprising copper and magnesium distributed throughout the copper, said copper layer including magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of said copper layer upon treatment of said copper layer by annealing; and annealing said copper layer for a time sufficient and at a temperature sufficient to form an inert magnesium oxide layer at the surface of said copper layer.
Claim 2
Dependent Claim
96 words
A process for forming an oxidation resistant, conductive copper layer on a substrate, comprising: depositing copper and magnesium onto the surface of a substrate to form a copper layer comprising copper and magnesium distributed throughout the copper, said copper layer including magnesium in an amount sufficient to form an inert magnesium oxide layer at the surface of said copper layer upon treatment of said copper layer by annealing; and annealing said copper layer for a time sufficient and at a temperature sufficient to form an inert magnesium oxide layer at the surface of said copper layer.
Claim 3
Dependent Claim
24 words
The process according to claim 1 wherein said copper layer also comprises magnesium in an amount sufficient to form a conductive alloy with copper.
Claim 4
Dependent Claim
28 words
The process according to claim 1, wherein said magnesium is present in said copper layer in an amount of at least about one tenth of one atomic percent.
Claim 5
Dependent Claim
24 words
The process according to claim 1, wherein said magnesium is present in said copper layer in an amount of at least one atomic percent.
Claim 6
Dependent Claim
22 words
The process according to claim 1, wherein said magnesium is present in said copper layer in an amount of two atomic percent.
Claim 7
Dependent Claim
18 words
The process according to claim 1 wherein said annealed copper layer has a resistivity of about 2 μΩ·cm.
Claim 8
Dependent Claim
18 words
The process according to claim 1 wherein said deposition step comprises sputtering said copper layer onto said substrate.
Claim 9
Dependent Claim
24 words
The process according to claim 7, wherein said sputtering step comprises simultaneously exposing a copper target and a magnesium target to an argon plasma.
Claim 10
Dependent Claim
35 words
The process according to claim 1 wherein said annealing step comprises heating said copper layer to a temperature of from about 275° C. to about 400° C. in an inert atmosphere for about thirty minutes.
Claim 11
Dependent Claim
92 words
A process for forming an oxidation resistant, conductive copper layer on a substrate, comprising: sputtering copper and magnesium onto the surface of a substrate to form a copper layer consisting essentially of copper and magnesium distributed throughout the copper, said copper layer comprising magnesium in an amount of about two atomic percent; annealing said copper layer in an inert atmosphere for at least about thirty minutes to a temperature of from about 275° C. to about 400° C. to form an inert magnesium oxide layer at the surface of said copper layer.
Claim 12
Dependent Claim
92 words
A process for forming an oxidation resistant, conductive copper layer on a substrate, comprising: sputtering copper and magnesium onto the surface of a substrate to form a copper layer consisting essentially of copper and magnesium distributed throughout the copper, said copper layer comprising magnesium in an amount of about two atomic percent; annealing said copper layer in an inert atmosphere for at least about thirty minutes to a temperature of from about 275° C. to about 400° C. to form an inert magnesium oxide layer at the surface of said copper layer.
Claim 13
Dependent Claim
24 words
The process according to claim 10 wherein said copper layer also comprises magnesium in an amount sufficient to form a conductive alloy with copper.
Claim 14
Dependent Claim
18 words
The process according to claim 10 wherein said annealed copper layer has a resistivity of about 2 μΩ·cm.
Claim 15
Dependent Claim
24 words
The process according to claim 10, wherein said sputtering step comprises simultaneously exposing a copper target and a magnesium target to an argon plasma.
Claim 16
Dependent Claim
78 words
A process for forming an oxidation resistant, conductive copper layer on a substrate, comprising depositing copper and magnesium onto the surface of a substrate to form a copper layer consisting essentially of copper and magnesium distributed throughout the copper, said copper layer including magnesium in an amount of at least about one atomic percent; and annealing said layer for a time sufficient and at a temperature sufficient to form an inert magnesium oxide layer at the surface thereof.
Claim 17
Dependent Claim
78 words
A process for forming an oxidation resistant, conductive copper layer on a substrate, comprising depositing copper and magnesium onto the surface of a substrate to form a copper layer consisting essentially of copper and magnesium distributed throughout the copper, said copper layer including magnesium in an amount of at least about one atomic percent; and annealing said layer for a time sufficient and at a temperature sufficient to form an inert magnesium oxide layer at the surface thereof.
References Cited (Backward Citations)
US4021277A
Cited
US4415427A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-04-21 | 2000-10-21 | 2001-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-21 | 2004-10-21 | 2005-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-21 | 2008-10-21 | 2009-04-22 | $7700.00 | Window Closed / Lapsed |