Patent US5622305A successfully refreshed from Google Patents.
US5622305A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Bonding scheme using group VB metallic layer
Assignee: Bell Semiconductor LLC
•
Filing: 1995-05-10
•
Granted: 1997-04-22
•
Expires: 2015-05-10
Abstract
Abstract A method for bonding one body to another, such as a laser device to a submount, uses a metallic layer composed of a Group VB metal, such as niobium, sandwiched between a non-metallic layer and solder layer formed by an approximate Au-Sn eutectic layer. Advantageously the Group VB layer is formed at a submount temperature of less than approximately 201° C., advantageously less than approximately 125° C., and preferably less than approximately 101° C.--advantageously to a thickness in the approximate range 0.05 μm to 0.2 μm, or even thinner if pinholes do not develop. The non-metallic layer is located on one of the bodies, and the other body has a metallic coating advantageously capped with an Au layer.
Inventors
- 👤 Donald D. Bacon
- 👤 Cheng-Hsuan Chen
- 👤 Ho S. Chen
- 👤 Avishay Katz
- 👤 King L. Tai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:08
CPC Classifications
B; B23; B23K; B23K35/00; B23K35/001; H; H10; H10W; H10W40/00; H10W40/20; H10W40/25; H10W40/254; H10W70/00; H10W70/60; H10W70/67; H10W70/69; H10W70/698; B23K2035/008; B23K35/007; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07337; H10W72/30; H10W72/321; H10W72/322; H10W72/351; H10W72/352; H10W72/50; H10W72/59; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12771; Y10T428/12806; Y10T428/12819
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
139 words
A method for bonding a device to a support substrate comprising the steps of: a. coating said device with one or more bonding layers, b. coating said support substrate with a barrier layer, c. coating said barrier layer with a bonding layer comprising a solder layer, d. placing said device and said support substrate together with the said bonding layers in mutual contact, and e. heating said bonding layers to bond the device to said support substrate the invention characterized in that: 1. at least part of said support substrate comprises a non-metallic material, 2. the said barrier layer is formed directly on said support substrate, 3. the said barrier layer comprises a group VB metal layer, and 4. the solder layer is deposited in situ on the said barrier layer directly after deposition of the said barrier layer.
Claim 2
Independent Claim
139 words
A method for bonding a device to a support substrate comprising the steps of: a. coating said device with one or more bonding layers, b. coating said support substrate with a barrier layer, c. coating said barrier layer with a bonding layer comprising a solder layer, d. placing said device and said support substrate together with the said bonding layers in mutual contact, and e. heating said bonding layers to bond the device to said support substrate the invention characterized in that: 1. at least part of said support substrate comprises a non-metallic material, 2. the said barrier layer is formed directly on said support substrate, 3. the said barrier layer comprises a group VB metal layer, and 4. the solder layer is deposited in situ on the said barrier layer directly after deposition of the said barrier layer.
Claim 3
Dependent Claim
15 words
The method of claim 1 in which the Group VB metallic layer is essentially niobum.
Claim 4
Dependent Claim
25 words
The method of claim 1 in which the Group VB metallic layer has a thickness in the approximate range of 0.05 μm to 0.2 μm.
Claim 5
Dependent Claim
26 words
The method of claim 1 further including, between steps (b) and (c), the step of forming an intermediate metallic layer on the Group VB metallic layer.
Claim 6
Dependent Claim
40 words
The method of claim 1 further including the steps of pressing the solder layer against a metallic coating located on at least a portion of the major surface of the device, and heating the solder layer above its melting temperature.
Claim 7
Dependent Claim
50 words
The method of claim 1 further including the steps of pressing the solder layer against a metallic coating located on at least a portion of a major surface of the device, and heating the solder layer above its melting temperature, and in which the solder layer comprises a gold-tin solder.
Claim 8
Dependent Claim
23 words
The method of claim 6 in which the solder layer has a thickness in the approximate range of 1.0 μm to 3.0 μm.
Claim 9
Dependent Claim
28 words
The method of claim 6 in which the solder layer has a tin content that is in the approximate range of 19 percent to 22 percent by weight.
Claim 10
Dependent Claim
23 words
The method of claim 6 in which the solder layer has a tin content that is approximately equal to 20 percent by weight.
Claim 11
Dependent Claim
23 words
The method of claim 9 in which the solder layer has a thickness in the approximate range of 1.0 μm to 3.0 μm.
Claim 12
Dependent Claim
14 words
The method of claim 1 in which the Group VB metallic layer comprises niobium.
Claim 13
Dependent Claim
40 words
The method of claim 11 further including the steps of pressing the solder layer against a metallic coating located on at least a portion of a major surface of the device, and heating the solder layer above its melting temperature.
Claim 14
Dependent Claim
51 words
The method of claim 11 further including the steps of pressing the solder layer against a metallic coating located on at least a portion of a major surface of a device, and heating the solder layer above its melting temperature, and in which the solder layer comprises a gold-tin solder layer.
Claim 15
Dependent Claim
18 words
The method of claim 13 in which the temperature in step (a) is less than approximately 125° C.
Claim 16
Dependent Claim
18 words
The method of claim 14 in which the temperature in step (a) is less than approximately 101° C.
Claim 17
Independent Claim
135 words
A method for bonding a device to a support substrate comprising the steps of: a. coating said device with one or more device bonding layers, b. coating said support substrate with a barrier layer, c. coating said barrier layer with a support substrate bonding layer comprising a gold-tin solder layer, d. pressing said support substrate bonding layer against said device bonding layer, and e. heating said support substrate bonding layer to a temperature in the range 61° C. to 101° C., the invention characterized in that: 1. at least part of said support substrate comprises a non-metallic material, 2. the said barrier layer is formed directly on said support substrate, 3. the said barrier layer comprises niobium, and 4. the said support substrate bonding layer is deposited in situ directly on the said barrier layer.
Claim 18
Independent Claim
135 words
A method for bonding a device to a support substrate comprising the steps of: a. coating said device with one or more device bonding layers, b. coating said support substrate with a barrier layer, c. coating said barrier layer with a support substrate bonding layer comprising a gold-tin solder layer, d. pressing said support substrate bonding layer against said device bonding layer, and e. heating said support substrate bonding layer to a temperature in the range 61° C. to 101° C., the invention characterized in that: 1. at least part of said support substrate comprises a non-metallic material, 2. the said barrier layer is formed directly on said support substrate, 3. the said barrier layer comprises niobium, and 4. the said support substrate bonding layer is deposited in situ directly on the said barrier layer.
Claim 19
Independent Claim
153 words
A method for bonding a device to a support substrate comprising the steps of: a. coating said device with one or more bonding layers, b. coating said support substrate with a barrier layer, c. forming an intermediate layer on said barrier layer, said intermediate layer comprising gold, tin, or an alloy of tin with niobium or nickel, d. coating said barrier layer with a bonding layer comprising a solder layer, e. placing said device and said support substrate together with the said bonding layers in mutual contact, and f. heating the said bonding layers to bond the device to said support substrate the invention characterized in that: 1. at least part of said support substrate comprises a non-metallic material, 2. the said barrier layer is formed directly on said support substrate, 3. the said barrier layer comprises niobium, and 4. the solder layer is deposited in situ directly on the said barrier layer.
Claim 20
Independent Claim
153 words
A method for bonding a device to a support substrate comprising the steps of: a. coating said device with one or more bonding layers, b. coating said support substrate with a barrier layer, c. forming an intermediate layer on said barrier layer, said intermediate layer comprising gold, tin, or an alloy of tin with niobium or nickel, d. coating said barrier layer with a bonding layer comprising a solder layer, e. placing said device and said support substrate together with the said bonding layers in mutual contact, and f. heating the said bonding layers to bond the device to said support substrate the invention characterized in that: 1. at least part of said support substrate comprises a non-metallic material, 2. the said barrier layer is formed directly on said support substrate, 3. the said barrier layer comprises niobium, and 4. the solder layer is deposited in situ directly on the said barrier layer.
Claim 21
Dependent Claim
40 words
The method of claim 17 further comprising the steps of pressing the solder layer against a metallic coating located on at least a portion of a major surface of the device, and heating the solder layer above its melting temperature.
Claim 22
Dependent Claim
14 words
The method of claim 18 in which the solder layer comprises a gold-tin solder.
Claim 23
Dependent Claim
24 words
The method of claim 19 in which the gold-tin solder layer has a thickness in the approximate range of 1.0 μm to 3.0 μm.
Claim 24
Dependent Claim
29 words
The method of claim 19 in which the gold-tin solder layer has a tin content that is in the approximate range of 19 percent to 22 percent by weight.
References Cited (Backward Citations)
US2555001A
Cited
US3518066A
Cited
US3325702A
Cited
US3492719A
Cited
US4772935A
Cited
US4995546A
Cited
US4946376A
Cited
US5234153A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-21 | 2000-10-21 | 2001-04-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-21 | 2004-10-21 | 2005-04-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-21 | 2008-10-21 | 2009-04-22 | $7700.00 | Window Closed / Lapsed |