US4995546A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Device mounting
Assignee: Avago Technologies International Sales Pte Ltd
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Filing: 1989-10-18
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Granted: 1991-02-26
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Expires: 2009-10-18
Abstract
Abstract A technique for assembling semiconductor devices in which semiconductor elements, especially lasers or LEDs, are mounted on a first packaging element such as a heat spreader that is mounted on a second packaging element such as a heat sink. Handling of solder preforms is avoided by coating at least one of each of the pairs of surfaces to be brought into contact with a layer of solder and heating the assembly to melt both solder layers in a single operation. In a preferred embodiment a heat spreader is coated in solder on both sides and interposed between a semiconductor element and a heat sink and the assembly is heated. Molybdenum may be used as a layer to aid wetting and adhesion and gold/tin solder may be used. Slightly different solidification temperatures and compositons for the layers may result from different take up of metallization layers from the components into the solder.
Inventors
- 👤 John C. Regnault
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:02
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/01; H10W40/03; H10W40/037; H01; H01S; H01S5/00; H01S5/02; H01S5/022; H01S5/0235; H01S5/02355; H01S5/0237; H10W72/00; H10W72/071; H10W72/073; H10W72/07331; H10W72/07336; H10W72/30; H10W72/351; H10W72/352
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
133 words
A method of manufacturing a semiconductor device having a semiconductor element bonded to a first surface of a first package element and a second surface of the first package element bonded to a second package element, the method comprising: applying a layer of fusible alloy solder to the first surface of the first package element, applying a fusible alloy solder layer to at least one of the second surface of the first package element and a second package element surface which is to be bonded to the first package element, interposing the first package element between the semiconductor element and the second package element, and applying heat to melt the fusible alloy solder layers and bond the semiconductor element and second package element to the first package element in a single heating operating.
Claim 2
Independent Claim
133 words
A method of manufacturing a semiconductor device having a semiconductor element bonded to a first surface of a first package element and a second surface of the first package element bonded to a second package element, the method comprising: applying a layer of fusible alloy solder to the first surface of the first package element, applying a fusible alloy solder layer to at least one of the second surface of the first package element and a second package element surface which is to be bonded to the first package element, interposing the first package element between the semiconductor element and the second package element, and applying heat to melt the fusible alloy solder layers and bond the semiconductor element and second package element to the first package element in a single heating operating.
Claim 3
Dependent Claim
16 words
A method according to claim 1 in which the solder is a gold and tin solder.
Claim 4
Dependent Claim
37 words
A method according to claim 1 in which the semiconductor element and at least one of the second surface of the first package element and the second package element surface bonded thereto further comprises a gold layer.
Claim 5
Independent Claim
172 words
A method of manufacturing a semiconductor device having a semiconductor element bonded to a first surface of a first package element and a second surface of the first package element bonded to a second package element, the method comprising the steps of: applying a first layer of fusible alloy solder to the first surface of the first package element, applying a second layer of fusible alloy solder to at least one of the second surface of the first package element and a second package element surface which is to be bonded to the first package element the first and second fusible alloy solder layers each having substantially the same melting point; positioning the first package element second surface adjacent the second package element surface to be bonded thereto; positioning the semiconductor element first surface adjacent the first package element; applying heat to melt the second solder layer; and applying heat to melt the first solder layer; whereby the semiconductor element and the second package element are bonded to the first package element.
Claim 6
Independent Claim
172 words
A method of manufacturing a semiconductor device having a semiconductor element bonded to a first surface of a first package element and a second surface of the first package element bonded to a second package element, the method comprising the steps of: applying a first layer of fusible alloy solder to the first surface of the first package element, applying a second layer of fusible alloy solder to at least one of the second surface of the first package element and a second package element surface which is to be bonded to the first package element the first and second fusible alloy solder layers each having substantially the same melting point; positioning the first package element second surface adjacent the second package element surface to be bonded thereto; positioning the semiconductor element first surface adjacent the first package element; applying heat to melt the second solder layer; and applying heat to melt the first solder layer; whereby the semiconductor element and the second package element are bonded to the first package element.
Claim 7
Dependent Claim
38 words
A method as claimed in claim 4 wherein the first and second solder layers are melted to effect bonding of the semiconductor element and the second package element to the first package element in a single heating operation.
Claim 8
Dependent Claim
112 words
A method as claimed in claim 4 wherein the first and second solder layers are applied respectively to the first and second surfaces of the first package element, and wherein the surface of said semiconductor element to which said first surface is to be bonded and the surface of the second package element to which said second surface is to be bonded each have at least a surface of a material which is readily absorbable by the respective solder layer when the solder is in a molten state, whereby during the heat bonding step or steps the composition or compositions of the solder layers changes with a consequent change in liquidus temperature.
Claim 9
Independent Claim
354 words
A method of manufacturing a semiconductor device having a semiconductor element bonded to a first surface of a first package element and a second surface of the first package element bonded to a second package element, the method comprising the steps of: applying a first layer of solder to the first surface of the first package element, applying a second layer of solder to at least one of the second surface of the first package element and a second package element surface which is to be bonded to the first package element, the first and second solder layers each having substantially the same melting point; positioning the first package element second surface adjacent the second package element surface to be bonded thereto; positioning the semiconductor element first surface adjacent the first package element; applying heat to melt the second solder layer; applying heat to melt the first solder layer; whereby the semiconductor element and the second package element are bonded to the first package element; wherein the first and second solder layers are applied respectively to the first and second surfaces of the first package element, and wherein the surface of said semiconductor element to which said first surface is to be bonded and the surface of the second package element to which said second surface is to be bonded each have at least a surface of a material which is readily absorbable by the respective solder layer when the solder is in a molten state, whereby during the heat bonding step or steps the composition or compositions of the solder layers changes with a consequent change in liquidus temperature; and wherein the first and second solder layers have substantially the same composition prior to bonding, the thickness of said readily absorbable material on said surface of said semiconductor device being substantially less than on said surface of the second package element, whereby in the bonded process less of said readily absorbable material is absorbed by said first solder layer than by said second solder layer, such that after bonding the second solder layer has a higher liquidus temperature than said first solder layer.
Claim 10
Independent Claim
354 words
A method of manufacturing a semiconductor device having a semiconductor element bonded to a first surface of a first package element and a second surface of the first package element bonded to a second package element, the method comprising the steps of: applying a first layer of solder to the first surface of the first package element, applying a second layer of solder to at least one of the second surface of the first package element and a second package element surface which is to be bonded to the first package element, the first and second solder layers each having substantially the same melting point; positioning the first package element second surface adjacent the second package element surface to be bonded thereto; positioning the semiconductor element first surface adjacent the first package element; applying heat to melt the second solder layer; applying heat to melt the first solder layer; whereby the semiconductor element and the second package element are bonded to the first package element; wherein the first and second solder layers are applied respectively to the first and second surfaces of the first package element, and wherein the surface of said semiconductor element to which said first surface is to be bonded and the surface of the second package element to which said second surface is to be bonded each have at least a surface of a material which is readily absorbable by the respective solder layer when the solder is in a molten state, whereby during the heat bonding step or steps the composition or compositions of the solder layers changes with a consequent change in liquidus temperature; and wherein the first and second solder layers have substantially the same composition prior to bonding, the thickness of said readily absorbable material on said surface of said semiconductor device being substantially less than on said surface of the second package element, whereby in the bonded process less of said readily absorbable material is absorbed by said first solder layer than by said second solder layer, such that after bonding the second solder layer has a higher liquidus temperature than said first solder layer.
Claim 11
Dependent Claim
24 words
A method as claimed in claim 4 wherein the first and second solder layers each have compositions at or close to a eutectic composition.
Claim 12
Dependent Claim
28 words
A method as claimed in claim 6, wherein the first and second solder layers each comprise a gold tin solder, and wherein said readily absorbable material is gold.
Claim 13
Dependent Claim
25 words
A method according to claim 4 in which the first package element is a heat spreader and the second package element is a heat sink.
Claim 14
Dependent Claim
36 words
A method according to claim 4 in which a layer is deposited on said first and second surfaces of the first package element prior to the solder application that aids adhesion and wetting by the solder.
Claim 15
Dependent Claim
12 words
A method according to claim 11 in which said layer comprises molybdenum.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-02-25 | 1994-08-27 | 1995-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-02-25 | 1998-08-27 | 1999-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-02-25 | 2002-08-27 | 2003-02-26 | $7700.00 | Window Closed / Lapsed |