Patent US5620912A successfully refreshed from Google Patents.
US5620912A
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Method of manufacturing a semiconductor device using a spacer
Assignee: SK Hynix Inc
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Filing: 1995-06-05
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Granted: 1997-04-15
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Expires: 2015-06-05
Abstract
Abstract A semiconductor device and manufacturing method wherein a gate insulating film is formed on a semiconductor substrate. A gate is formed on the gate insulating film and a sidewall spacer is formed on respective sides of the gate. The substrate is etched at the respective sides of the gate to form respective recessed parts of the substrate. An insulating film is provided on the recessed parts of the substrate and the recessed parts are filled with a semiconductor layer. Impurity regions are formed contacting the semiconductor layer in the semiconductor substrate on the respective sides of the gate.
Inventors
- 👤 Lee Y. Hwang
- 👤 Hong S. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 06:37
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/01; H10D62/021; H10D62/113; H10D62/115; H10D62/116; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D64/20; H10D64/23; H10D64/251; H10D64/256; H10P; H10P32/00; H10P32/10; H10P32/14
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
114 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate insulating film on a semiconductor substrate; forming a gate on the gate insulating film; forming a spacer on respective sides of the gate; etching the substrate at the respective sides of the gate to form respective recessed parts of the substrate so that the recessed parts extend underneath the spacer; providing an insulating film on the recessed parts underneath the spacer; depositing a semiconductor layer on the insulating film extending underneath the spacer to fill the recessed parts; and forming impurity regions in the semiconductor substrate on the respective sides of the gate, the impurity regions contacting the semiconductor layer.
Claim 2
Independent Claim
114 words
A method of manufacturing a semiconductor device, comprising the steps of: forming a gate insulating film on a semiconductor substrate; forming a gate on the gate insulating film; forming a spacer on respective sides of the gate; etching the substrate at the respective sides of the gate to form respective recessed parts of the substrate so that the recessed parts extend underneath the spacer; providing an insulating film on the recessed parts underneath the spacer; depositing a semiconductor layer on the insulating film extending underneath the spacer to fill the recessed parts; and forming impurity regions in the semiconductor substrate on the respective sides of the gate, the impurity regions contacting the semiconductor layer.
Claim 3
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 1, wherein the step of forming the recessed parts includes the step of isotropically etching the substrate.
Claim 4
Dependent Claim
57 words
The method of manufacturing a semiconductor device according to claim 1, wherein the step of depositing a semiconductor layer on the insulating film to fill the recessed parts comprises the steps of: forming the semiconductor layer on an entire surface of the substrate; and etching back the semiconductor layer to an upper surface of the semiconductor substrate.
Claim 5
Dependent Claim
28 words
The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor layer on the insulating film to fill the recessed parts comprises a polysilicon film.
Claim 6
Dependent Claim
52 words
The method of manufacturing a semiconductor device as claimed in claim 4, wherein the step of depositing a semiconductor layer on the insulating film to fill the recessed parts comprises the steps of: forming an undoped polysilicon film; and ion-implanting impurities into the undoped polysilicon film, thereby forming a doped polysilicon film.
Claim 7
Dependent Claim
35 words
The method of manufacturing a semiconductor device according claim 1, wherein the step of forming the impurity regions comprises the step of doping the semiconductor substrate beneath the gate with impurities of the semiconductor layer.
Claim 8
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 6, wherein the insulating film serves as a diffusion-blocking film when the impurity regions are formed.
Claim 9
Dependent Claim
41 words
The method of manufacturing a semiconductor device according claim 1, wherein the step of forming the impurity regions comprises the step of automatically doping the semiconductor substrate beneath the gate with impurities of the semiconductor layer through a heat treatment process.
Claim 10
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 8, wherein the insulating film serves as a diffusion-blocking film when the impurity regions are formed.
Claim 11
Dependent Claim
85 words
The method of manufacturing a semiconductor device according to claim 1, wherein the step of providing an insulating film on the recessed parts underneath the spacer comprises the steps of: forming a nitride film on an entire surface of the substrate including the recessed parts; anisotropically etching the nitride film, the nitride film remaining only on the recessed parts underneath the spacer; forming the insulating film on a bottom of the recessed parts where the nitride film is removed; and removing the remaining nitride film.
Claim 12
Dependent Claim
19 words
The method of manufacturing a semiconductor device according to claim 1, wherein the insulating film is an oxide film.
Claim 13
Dependent Claim
26 words
The method of manufacturing a semiconductor device according to claim 1, wherein the step of forming the spacer includes the step of forming a sidewall spacer.
Claim 14
Dependent Claim
38 words
The method of manufacturing a semiconductor device according to claim 1, wherein the step of forming the insulating film includes the step of forming the insulating film only on bottom portions of the recessed parts of the substrate.
Claim 15
Dependent Claim
30 words
The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor layer on the insulating film to fill the recessed parts comprises a directly doped polysilicon film.
References Cited (Backward Citations)
JPH01187870A
Cited
US4963502A
Cited
US5040037A
Cited
US5116768A
Cited
US5191397A
Cited
US5017998A
Cited
US5188973A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-04-14 | 2000-10-14 | 2001-04-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-04-14 | 2004-10-14 | 2005-04-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-04-14 | 2008-10-14 | 2009-04-15 | $7700.00 | Window Closed / Lapsed |