US5618747A — Process for producing a stacked capacitor having …

Claim 1

Independent Claim 252 words

A method for fabricating a stacked capacitor, dynamic random access memory, (DRAM), device, on a semiconductor substrate, using a hemispherical grained polysilicon layer as part of a storage node structure, with said hemispherical grain polysilicon layer being deposited in a LPCVD tool, featuring multiple heating zones and multiple reactant injection inlets, comprising the steps of: providing a transfer gate transistor in said substrate, comprised of a gate insulator, a polysilicon gate structure, completely protected with insulator, and source and drain regions; depositing a first polysilicon layer on an underlying, said transfer gate transistor; depositing a second polysilicon layer on said first polysilicon layer; patterning of said second polysilicon layer, and of said first polysilicon layer, to form bottom portion of said storage node structure, contacting source and drain region of said transfer gate transistor; depositing said hemispherical grained polysilicon layer, on said bottom portion of said storage node, and on said transfer gate transistor, using an LPCVD tool for deposition of said hemispherical grained polysilicon layer, in which said LPCVD tool is equipped with multiple heating zones, and multiple reactant injection inlets; patterning of said hemispherical grained polysilicon layer, to complete formation of said storage node structure; formation of a composite dielectric layer on said storage node structure; depositing a fourth polysilicon layer on said storage node structure, and on said transfer gate transistor, not covered by said storage node structure; and patterning of said fourth polysilicon layer, and of said capacitor dielectric, to form cell plate for said stacked capacitor structure.

Claim 2

Independent Claim 252 words

A method for fabricating a stacked capacitor, dynamic random access memory, (DRAM), device, on a semiconductor substrate, using a hemispherical grained polysilicon layer as part of a storage node structure, with said hemispherical grain polysilicon layer being deposited in a LPCVD tool, featuring multiple heating zones and multiple reactant injection inlets, comprising the steps of: providing a transfer gate transistor in said substrate, comprised of a gate insulator, a polysilicon gate structure, completely protected with insulator, and source and drain regions; depositing a first polysilicon layer on an underlying, said transfer gate transistor; depositing a second polysilicon layer on said first polysilicon layer; patterning of said second polysilicon layer, and of said first polysilicon layer, to form bottom portion of said storage node structure, contacting source and drain region of said transfer gate transistor; depositing said hemispherical grained polysilicon layer, on said bottom portion of said storage node, and on said transfer gate transistor, using an LPCVD tool for deposition of said hemispherical grained polysilicon layer, in which said LPCVD tool is equipped with multiple heating zones, and multiple reactant injection inlets; patterning of said hemispherical grained polysilicon layer, to complete formation of said storage node structure; formation of a composite dielectric layer on said storage node structure; depositing a fourth polysilicon layer on said storage node structure, and on said transfer gate transistor, not covered by said storage node structure; and patterning of said fourth polysilicon layer, and of said capacitor dielectric, to form cell plate for said stacked capacitor structure.

Claim 3

Dependent Claim 36 words

The method of claim 1, wherein said transfer gate transistor is an N type, field effect transistor, with a silicon dioxide layer, used for said gate insulator, at a thickness between about 80 to 170 Angstroms.

Claim 4

Dependent Claim 41 words

The method of claim 1, wherein said first polysilicon layer is deposited intrinsically, using LPCVD procedures, at a temperature between about 550° to 630° C., to a thickness between about 1000 to 3000 Angstroms, using SiH 4 as a reactant gas.

Claim 5

Dependent Claim 45 words

The method of claim 1, wherein said second polysilicon layer is deposited, using LPCVD procedures, including insitu doping with SiH 4 and PH 3 as reactant gasses, at a temperature between about 550° to 600° C., to a thickness between about 500 to 2500 Angstroms.

Claim 6

Dependent Claim 68 words

The method of claim 1, wherein said second polysilicon layer is deposited intrinsically, using LPCVD procedures, with SiH 4 as a reactant gas, at a temperature between about 550° to 630° C., to a thickness between about 550 to 2500 Angstroms, and then doped via phosphorous ion implantation, at an energy between about 30 to 60 KeV, at a dose between about 5E14 to 5E15 atoms/cm 2 .

Claim 7

Dependent Claim 37 words

The method of claim 1, wherein said hemispherical grained polysilicon layer is deposited in said LPCVD tool, comprised of between about 3 to 6 heating zones, and comprised of between about 2 to 4 reactant injection inlets.

Claim 8

Dependent Claim 40 words

The method of claim 1, wherein said hemispherical grained polysilicon layer is deposited at a temperature between about 535° to 600° C., to a thickness between about 400 to 1500 Angstroms, using Si 2 H 6 as a reactant gas.

Claim 9

Dependent Claim 26 words

The method of claim 1, wherein patterning of said hemispherical grained polysilicon layer is performed via reactive ion etching, using Cl 2 and HBr as etchants.

Claim 10

Dependent Claim 122 words

The method of claim 1, wherein said composite dielectric layer is comprised of silicon oxynitride--silicon nitride--silicon dioxide obtained by: growing an native silicon oxide layer on the surface, of said hemispherical grained polysilicon, using a sulfuric acid--hydrogen peroxide mixture, at a temperature between about 100° to 130° C., to a thickness between about 8 to Angstroms; deposition of a silicon nitride layer, using LPCVD procedures, at a temperature between about 650° to 750° C., to a thickness between about 50 to 80 Angstroms; and an oxidation of said silicon nitride layer, at a temperature between about 850° to 950° C., in an oxygen--steam ambient, to form between about 10 to 30 Angstroms of silicon oxynitride on the underlying, said silicon nitride layer.

Claim 11

Dependent Claim 49 words

The method of claim 1, wherein said fourth polysilicon layer is deposited intrinsically, using LPCVD procedures, using SiH 4 as a reactant gas, at a temperature between about 550° to 630° C., to a thickness between about 1000 to 2500 Angstroms, and then doped via ion implantation of phosphorous.

Claim 12

Dependent Claim 47 words

The method of claim 1, wherein said fourth polysilicon layer is deposited using LPCVD procedures, including insitu doping via use of SiH 4 and PH 3 as reactant gasses, at a temperature between about 550° to 600° C., to a thickness between about 1000 to 2500 Angstroms.

Claim 13

Dependent Claim 64 words

The method of claim 1, wherein said fourth polysilicon is patterned, via reactive ion etching, using Cl 2 and HBr as etchants, to form said cell plate, of said stacked capacitor structure, completely covering underlying, said composite dielectric layer, and said storage node structure, with said storage node composed of said hemispherical grained polysilicon layer, said second polysilicon layer, and said first polysilicon layer.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	2000-04-07	2000-10-07	2001-04-08	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2004-04-07	2004-10-07	2005-04-08	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2008-04-07	2008-10-07	2009-04-08	$7700.00	Window Closed / Lapsed

Process for producing a stacked capacitor having polysilicon with optimum hemispherical grains

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