Method of manufacturing sensor

Claim 1

A method for manufacturing a sensor in a plate of monocrystalline silicon, comprising the steps of: forming a multilayer plate in which an etching layer is arranged between an upper layer and a lower layer, the upper and lower layers being made of monocrystalline silicon and the etching layer being made of an insulating material selected from the group including silicon oxide, silicon nitride, and glass, wherein the step of forming the multilayer plate includes the steps of joining two plates together, with at least one of the plates having, on a surface by which it is joined to the other plate, a layer of material the same as that of the etching layer, and reducing the thickness of the upper silicon layer; after forming the multilayer plate, forming a structure in the upper layer by introducing troughs that extend through the upper layer to the etching layers, wherein the structure includes a bending member, a mount attached to the bending member, and at least two counterelectrodes; and after forming the structure in the upper layer, removing a first portion of the etching layer by etching, a second portion of the etching layer remaining beneath the mount and the at least two counterelectrodes and anchoring the mount and the at least two counterelectrodes to the lower layer, the first portion of the etching layer being removed beneath the bending member, wherein the bending member is movable with respect to the mount in a direction parallel to a surface of the lower layer and between the at least two counterelectrodes in response to an acceleration only after the first portion of the etching layer is removed beneath the bending member, a distance between the bending member and the at least two counterelectrodes changing as a function of movement of the bending member.

Claim 2

A method for manufacturing a sensor in a plate of monocrystalline silicon, comprising the steps of: forming a multilayer plate in which an etching layer is arranged between an upper layer and a lower layer, the upper and lower layers being made of monocrystalline silicon and the etching layer being made of an insulating material selected from the group including silicon oxide, silicon nitride, and glass, wherein the step of forming the multilayer plate includes the steps of joining two plates together, with at least one of the plates having, on a surface by which it is joined to the other plate, a layer of material the same as that of the etching layer, and reducing the thickness of the upper silicon layer; after forming the multilayer plate, forming a structure in the upper layer by introducing troughs that extend through the upper layer to the etching layers, wherein the structure includes a bending member, a mount attached to the bending member, and at least two counterelectrodes; and after forming the structure in the upper layer, removing a first portion of the etching layer by etching, a second portion of the etching layer remaining beneath the mount and the at least two counterelectrodes and anchoring the mount and the at least two counterelectrodes to the lower layer, the first portion of the etching layer being removed beneath the bending member, wherein the bending member is movable with respect to the mount in a direction parallel to a surface of the lower layer and between the at least two counterelectrodes in response to an acceleration only after the first portion of the etching layer is removed beneath the bending member, a distance between the bending member and the at least two counterelectrodes changing as a function of movement of the bending member.