US5614741A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Solid state imager with reduced smear and method of making the same
Assignee: Sony Corp
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Filing: 1994-05-17
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Granted: 1997-03-25
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Expires: 2014-05-17
Abstract
Abstract A CCD solid state imaging device can reduce a smear component. This CCD solid state imaging device comprises a plurality of photosensor sections (10) arranged in a matrix fashion, a vertical transfer register (5) having a transfer electrode (16) disposed at every column of the photosensor sections, a shunt line layer (33) connected to the transfer electrode (16) on the vertical transfer register (5), and a photo-shield layer (38) formed so as to surround the photosensor section 10 through an interlayer insulating layer (37) which covers the shunt layer (33), in which the interlayer insulating layer (37) is not formed under an overhang portion (38a) of the photo-shield layer (38) to the photosensor section (10).
Inventors
- 👤 Kouichi Harada
- 👤 Junichi Furukawa
- 👤 Kazushi Wada
- 👤 Takaaki Sarai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:52
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/158; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/452; H10F39/151; H10F39/1515; H10F39/153; H10F39/80; H10F39/805
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
104 words
A solid state imaging device comprising: a plurality of photosensor sections arranged in a matrix fashion; a vertical transfer register provided between photosensor elements arranged in the vertical direction, said vertical transfer register having a transfer gate electrode having a predetermined number of phases; a photo-shield layer provided over said transfer electrode; a shunt line for connecting said transfer electrodes of the same phase; a first insulating layer between said transfer gate electrode and said shunt line and extending over a photosensor section; and a second interlayer insulating layer thicker than said first insulating layer for insulating said shunt line and said photo-shield layer.
Claim 2
Dependent Claim
104 words
A solid state imaging device comprising: a plurality of photosensor sections arranged in a matrix fashion; a vertical transfer register provided between photosensor elements arranged in the vertical direction, said vertical transfer register having a transfer gate electrode having a predetermined number of phases; a photo-shield layer provided over said transfer electrode; a shunt line for connecting said transfer electrodes of the same phase; a first insulating layer between said transfer gate electrode and said shunt line and extending over a photosensor section; and a second interlayer insulating layer thicker than said first insulating layer for insulating said shunt line and said photo-shield layer.
Claim 3
Dependent Claim
25 words
The solid state imaging device according to claim 1, wherein said photo-shield layer is formed between photosensor sections arranged in at least the vertical direction.
Claim 4
Dependent Claim
22 words
The solid state imaging device according to claim 1, wherein said photo-shield layer is formed so as to surround said photosensor section.
Claim 5
Dependent Claim
20 words
The solid state imaging device according to claim 1, wherein said interlayer insulating film is formed of a nitride film.
Claim 6
Dependent Claim
29 words
The solid state imaging device according to claim 1, wherein said interlayer insulating layer is formed of a nitride film and an oxide film laminated on said nitride film.
Claim 7
Dependent Claim
22 words
The solid state imaging device according to claim 1, wherein said photo-shield layer has an overhang portion formed of two extended layers.
Claim 8
Dependent Claim
29 words
The solid state imaging device according to claim 6, wherein a lower layer of said two layers has a thickness thinner than a film thickness of said shunt line.
Claim 9
Dependent Claim
20 words
The solid state imaging device according to claim 1, further comprising a reflection preventing layer formed under said photo-shield layer.
Claim 10
Dependent Claim
50 words
The solid state imaging device according to claim 1, wherein said photo-shield layer has an overhang portion overhung to said photosensor sections and a thin film serving as a light stopper is formed between said overhang portion and said insulating film which insulates said transfer electrode and said shunt line.
Claim 11
Dependent Claim
42 words
The solid state imaging device according to claim 1, wherein said photo-shield layer is formed of first and second films and said photo-shield layer is formed to overhang said photosensor section side and said shunt line is formed of said first film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-24 | 2000-09-23 | 2001-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-24 | 2004-09-23 | 2005-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-24 | 2008-09-23 | 2009-03-25 | $7700.00 | Window Closed / Lapsed |