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EP0487989A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Solid-state imaging device

Assignee: Sony Corp
•
Filing: 1991-11-14
•
Granted: —
•
Expires: 2011-11-14
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Abstract

Abstract The solid-state imaging device comprises a light-barrier layer (14) formed on transfer electrodes (17, 18) on top of a vertical pixel isolating region (13) by means of an insulating film (16). The light-barrier layer (14) overlies the lateral sides of the transfer electrodes (17, 18) and the peripheral region of a photosensor region (12) neighboring on the vertical pixel isolating region (13). By provision of the light-barrier layer (14), the light incident on the vertical pixel isolating region (13) is stopped to reduce smear charges which might otherwise be intruded into the vertical charge transfer section (21).

Inventors

  • 👤 Hiromichi Matsui
  • 👤 Kazuomi Ezoe
  • 👤 Toshiro Kurusu

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 03:06
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F77/00; H10F77/30; H10F77/306; H10F77/331; H10F77/334; H10F39/153

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 94 words
A CCD comprising a plurality of pixels (12) arrayed in a plurality of vertical columns. a plurality of vertical transfer sections (21) arrayed parallel to said columns of pixels, and a light-barrier layer (14) formed on said vertical transfer section and a vertical pixel isolating region (13) adapted for vertically isolating said pixels from one another, by means of an insulating layer, said light-barrier layer (14) covering a lateral wall section of said vertical transfer section (21) and a peripheral region of each of said pixels neighboring on said vertical pixel isolating region (13).
Claim 2
Dependent Claim 94 words
A CCD comprising a plurality of pixels (12) arrayed in a plurality of vertical columns. a plurality of vertical transfer sections (21) arrayed parallel to said columns of pixels, and a light-barrier layer (14) formed on said vertical transfer section and a vertical pixel isolating region (13) adapted for vertically isolating said pixels from one another, by means of an insulating layer, said light-barrier layer (14) covering a lateral wall section of said vertical transfer section (21) and a peripheral region of each of said pixels neighboring on said vertical pixel isolating region (13).
Claim 3
Dependent Claim 24 words
The CCD according to claim 1 wherein a vertical transfer electrode of said vertical transfer section is comprised of two polysilicon electrodes (17, 18).
Claim 4
Dependent Claim 17 words
The CCD according to claim 1 wherein said light-barrier layer (14) is comprised of an aluminum layer.
Claim 5
Dependent Claim 49 words
The CCD according to claim 1 wherein impurity concentration of said vertical pixel isolating region (13) is adjusted to prevent a channel from being formed in said vertical pixel isolating region when a driving current is supplied to a transfer electrode on top of the vertical pixel isolating region.

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