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US5614442A
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Method of making flip-chip microwave integrated circuit
Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1997-03-25
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Expires: 2015-06-07
Abstract
Abstract A flip-chip integrated circuit 1100 having a transistor 1108 formed at a frontside surface of a substrate 1104. An airbridge 1106 may be formed over portions of the transistor wherein a top surface of the airbridge is spaced from the frontside surface by a distance approximately equal to, or greater than, the thickness of the substrate. The circuit may also include a transmission line 1114 at the frontside surface and a heatsink 1102 coupled to the airbridge.
Inventors
- 👤 Hua Q. Tserng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/483; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W44/00; H10W44/20; H10W44/226; H10W44/234; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W90/00; H10W44/203; H10W44/216; H10W44/251; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/50; H10W72/531; H10W72/536; H10W72/851; H10W72/874; H10W72/879; H10W72/884; H10W90/20; H10W90/297; H10W90/701; H10W90/721; H10W90/722; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
103 words
A method of fabricating an integrated circuit, said method comprising the steps of: (a) forming at least one transistor at a frontside surface of a substrate: (b) forming at least one transmission line at said frontside surface: (c) forming an airbridge over portions of said transistor wherein a top surface of said airbridge is spaced from said frontside surface by a distance approximately equal to, or greater than, the thickness of said substrate; (d) forming a conducting via through said substrate coupling said at least one transistor to a bond pad at said backside surface; and (e) coupling a heatsink to said airbridge.
Claim 2
Independent Claim
103 words
A method of fabricating an integrated circuit, said method comprising the steps of: (a) forming at least one transistor at a frontside surface of a substrate: (b) forming at least one transmission line at said frontside surface: (c) forming an airbridge over portions of said transistor wherein a top surface of said airbridge is spaced from said frontside surface by a distance approximately equal to, or greater than, the thickness of said substrate; (d) forming a conducting via through said substrate coupling said at least one transistor to a bond pad at said backside surface; and (e) coupling a heatsink to said airbridge.
Claim 3
Dependent Claim
11 words
The method of claim 1, wherein said dielectric material is polyimide.
Claim 4
Dependent Claim
20 words
The method of claim 1, further comprising the step of forming a groundplane at said backside surface of said substrate.
Claim 5
Dependent Claim
11 words
The method of claim 1, wherein said heatsink comprises a dielectric.
Claim 6
Dependent Claim
18 words
The method of claim 4, wherein said dielectric is taken from the group consisting of AIN and BeO.
Claim 7
Dependent Claim
15 words
The method of claim 4, wherein said dielectric heatsink is coupled to a metal heatsink.
Claim 8
Dependent Claim
10 words
The method of claim 4, wherein said heatsink is metal.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-24 | 2000-09-23 | 2001-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-24 | 2004-09-23 | 2005-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-24 | 2008-09-23 | 2009-03-25 | $7700.00 | Window Closed / Lapsed |