US5614442A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making flip-chip microwave integrated circuit
Assignee: Texas Instruments Inc
•
Filing: 1995-06-07
•
Granted: 1997-03-25
•
Expires: 2015-06-07
Abstract
Abstract A flip-chip integrated circuit 1100 having a transistor 1108 formed at a frontside surface of a substrate 1104. An airbridge 1106 may be formed over portions of the transistor wherein a top surface of the airbridge is spaced from the frontside surface by a distance approximately equal to, or greater than, the thickness of the substrate. The circuit may also include a transmission line 1114 at the frontside surface and a heatsink 1102 coupled to the airbridge.
Inventors
- 👤 Hua Q. Tserng
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 18:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/482; H10W20/483; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W44/00; H10W44/20; H10W44/226; H10W44/234; H10W70/00; H10W70/60; H10W70/62; H10W70/65; H10W90/00; H10W44/203; H10W44/216; H10W44/251; H10W72/00; H10W72/071; H10W72/072; H10W72/07251; H10W72/20; H10W72/50; H10W72/531; H10W72/536; H10W72/851; H10W72/874; H10W72/879; H10W72/884; H10W90/20; H10W90/297; H10W90/701; H10W90/721; H10W90/722; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
103 words
A method of fabricating an integrated circuit, said method comprising the steps of: (a) forming at least one transistor at a frontside surface of a substrate: (b) forming at least one transmission line at said frontside surface: (c) forming an airbridge over portions of said transistor wherein a top surface of said airbridge is spaced from said frontside surface by a distance approximately equal to, or greater than, the thickness of said substrate; (d) forming a conducting via through said substrate coupling said at least one transistor to a bond pad at said backside surface; and (e) coupling a heatsink to said airbridge.
Claim 2
Independent Claim
103 words
A method of fabricating an integrated circuit, said method comprising the steps of: (a) forming at least one transistor at a frontside surface of a substrate: (b) forming at least one transmission line at said frontside surface: (c) forming an airbridge over portions of said transistor wherein a top surface of said airbridge is spaced from said frontside surface by a distance approximately equal to, or greater than, the thickness of said substrate; (d) forming a conducting via through said substrate coupling said at least one transistor to a bond pad at said backside surface; and (e) coupling a heatsink to said airbridge.
Claim 3
Dependent Claim
11 words
The method of claim 1, wherein said dielectric material is polyimide.
Claim 4
Dependent Claim
20 words
The method of claim 1, further comprising the step of forming a groundplane at said backside surface of said substrate.
Claim 5
Dependent Claim
11 words
The method of claim 1, wherein said heatsink comprises a dielectric.
Claim 6
Dependent Claim
18 words
The method of claim 4, wherein said dielectric is taken from the group consisting of AIN and BeO.
Claim 7
Dependent Claim
15 words
The method of claim 4, wherein said dielectric heatsink is coupled to a metal heatsink.
Claim 8
Dependent Claim
10 words
The method of claim 4, wherein said heatsink is metal.
References Cited (Backward Citations)
US4959705A
Cited
US5319237A
Cited
US5202752A
Cited
US5268315A
Cited
US5373185A
Cited
US5352998A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-24 | 2000-09-23 | 2001-03-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-24 | 2004-09-23 | 2005-03-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-24 | 2008-09-23 | 2009-03-25 | $7700.00 | Window Closed / Lapsed |