US5612565A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having channel boundary with uneven shape
Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1994-12-05
•
Granted: 1997-03-18
•
Expires: 2014-12-05
Abstract
Abstract A semiconductor device comprising a source region, a channel region, and a drain region, provided that one or both of the phase boundary between the channel forming region and the source region and that between the channel forming region and the drain region are shaped into an uneven shape, and optionally, periodically. Also claimed is a process for fabricating the same.
Inventors
- 👤 Naoto Kusumoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:50
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6704; H10D30/6713; H10D30/6715; H10D30/6717
Claims Analysis
Total Claims: 37
Claim 1
Independent Claim
65 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region, wherein at least one of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 2
Dependent Claim
65 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region, wherein at least one of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 3
Dependent Claim
40 words
The device of claim 1 wherein said at least one of the boundary between the channel region and the source region and the boundary between the channel region and the drain region has a shape having a substantially periodical unevenness.
Claim 4
Dependent Claim
16 words
The device of claim 1 wherein the uneven shape can be expressed by a periodical function.
Claim 5
Dependent Claim
33 words
The device of claim 1 wherein the boundary between the channel region and the source region and the boundary between the channel region and the drain region have a substantially constant interval therebetween.
Claim 6
Dependent Claim
70 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region, wherein at least one of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has a shape having a substantially periodical unevenness and having an amplitude smaller than a channel length of the channel region.
Claim 7
Dependent Claim
70 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region, wherein at least one of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has a shape having a substantially periodical unevenness and having an amplitude smaller than a channel length of the channel region.
Claim 8
Dependent Claim
15 words
The device of claim 5 wherein the shape can be expressed by a periodical function.
Claim 9
Dependent Claim
33 words
The device of claim 5 wherein the boundary between the channel region and the source region and the boundary between the channel region and the drain region have a substantially constant interval therebetween.
Claim 10
Dependent Claim
71 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region, wherein at least one of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has an uneven shape expressed by a periodical function and having .an amplitude smaller than a channel length of the channel region.
Claim 11
Dependent Claim
71 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region, wherein at least one of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has an uneven shape expressed by a periodical function and having .an amplitude smaller than a channel length of the channel region.
Claim 12
Dependent Claim
33 words
The device of claim 8 wherein the boundary between the channel region and the source region and the boundary between the channel region and the drain region have a substantially constant interval therebetween.
Claim 13
Dependent Claim
35 words
The device of claim 8 wherein the boundary between the channel region and the source region and the boundary between the channel region and the drain region are related by substantially the same phase relation.
Claim 14
Dependent Claim
68 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region, wherein each of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has a shape having a substantially periodical unevenness and having an amplitude smaller than a channel length of the channel region.
Claim 15
Dependent Claim
68 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region, wherein each of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has a shape having a substantially periodical unevenness and having an amplitude smaller than a channel length of the channel region.
Claim 16
Dependent Claim
34 words
The device of claim 11 wherein amplitude of the boundary between the channel region and the source region is substantially same as that of the boundary between the channel region and the drain region.
Claim 17
Dependent Claim
38 words
The device of claim 11 wherein period of the periodical unevenness of the boundary between the channel region and the drain region is substantially same as that of the boundary between the channel region and the source region.
Claim 18
Dependent Claim
37 words
A semiconductor device comprising a channel region and a drain region, wherein boundary between the channel region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 19
Dependent Claim
37 words
A semiconductor device comprising a channel region and a drain region, wherein boundary between the channel region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 20
Dependent Claim
75 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a substantially intrinsic offset region being provided between the channel region and the drain region, wherein boundary between the channel region and the offset region and boundary between the offset region and the drain region have an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 21
Dependent Claim
75 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a substantially intrinsic offset region being provided between the channel region and the drain region, wherein boundary between the channel region and the offset region and boundary between the offset region and the drain region have an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 22
Dependent Claim
76 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a lightly doped region being provided between the channel region and the drain region, wherein boundary between the channel region and the lightly doped region and boundary between the lightly doped region and the drain region have an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 23
Dependent Claim
76 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a lightly doped region being provided between the channel region and the drain region, wherein boundary between the channel region and the lightly doped region and boundary between the lightly doped region and the drain region have an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 24
Dependent Claim
73 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a substantially intrinsic offset region being provided in contact with the channel region, wherein boundary between the channel region and the offset region and boundary between the offset region and the drain region have an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 25
Dependent Claim
73 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a substantially intrinsic offset region being provided in contact with the channel region, wherein boundary between the channel region and the offset region and boundary between the offset region and the drain region have an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 26
Dependent Claim
74 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a lightly doped region being provided in contact with the channel region, wherein boundary between the channel region and the lightly doped region and boundary between the lightly doped region and the drain region have an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 27
Dependent Claim
74 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a lightly doped region being provided in contact with the channel region, wherein boundary between the channel region and the lightly doped region and boundary between the lightly doped region and the drain region have an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 28
Dependent Claim
80 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a substantially intrinsic offset region being provided in contact with at least one of the source region and the drain region, wherein boundary between the offset region and said at least one of the source region and the drain region has an uneven shape having an .amplitude smaller than a channel length of the channel region.
Claim 29
Dependent Claim
80 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a substantially intrinsic offset region being provided in contact with at least one of the source region and the drain region, wherein boundary between the offset region and said at least one of the source region and the drain region has an uneven shape having an .amplitude smaller than a channel length of the channel region.
Claim 30
Dependent Claim
80 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a lightly doped region being provided in contact with at least one of the source region and the drain region, wherein boundary between the lightly doped region and said at least one of the source region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 31
Dependent Claim
80 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a lightly doped region being provided in contact with at least one of the source region and the drain region, wherein boundary between the lightly doped region and said at least one of the source region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region.
Claim 32
Dependent Claim
91 words
A semiconductor device comprising: a source region, a drain region, and a channel region provided between the source region and the drain region; and a gate electrode provided adjacent to the channel region with a gate insulator therebetween, wherein at least one of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region and is aligned with a corresponding side of the gate electrode.
Claim 33
Dependent Claim
91 words
A semiconductor device comprising: a source region, a drain region, and a channel region provided between the source region and the drain region; and a gate electrode provided adjacent to the channel region with a gate insulator therebetween, wherein at least one of a boundary between the channel region and the source region and a boundary between the channel region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region and is aligned with a corresponding side of the gate electrode.
Claim 34
Dependent Claim
106 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a substantially intrinsic offset region being provided in contact with at least one of the source region and the drain region, wherein boundary between the offset region and the at least one of the source region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region, and wherein width of the offset region from the channel region to the at least one of the source region and the drain region is uniform.
Claim 35
Dependent Claim
106 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a substantially intrinsic offset region being provided in contact with at least one of the source region and the drain region, wherein boundary between the offset region and the at least one of the source region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region, and wherein width of the offset region from the channel region to the at least one of the source region and the drain region is uniform.
Claim 36
Dependent Claim
107 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a lightly doped region being provided in contact with at least one of the source region and the drain region, wherein boundary between the lightly doped region and the at least one of the source region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region, and wherein width of the lightly doped region from the channel region to the at least one of the source region and the drain region is uniform.
Claim 37
Dependent Claim
107 words
A semiconductor device comprising a source region, a drain region, and a channel region provided between the source region and the drain region with a lightly doped region being provided in contact with at least one of the source region and the drain region, wherein boundary between the lightly doped region and the at least one of the source region and the drain region has an uneven shape having an amplitude smaller than a channel length of the channel region, and wherein width of the lightly doped region from the channel region to the at least one of the source region and the drain region is uniform.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-17 | 2000-09-16 | 2001-03-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-17 | 2004-09-16 | 2005-03-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-17 | 2008-09-16 | 2009-03-18 | $7700.00 | Window Closed / Lapsed |