US3414781A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Field effect transistor having interdigitated source and drain and overlying, insulated gate
Assignee: Raytheon Co
•
Filing: 1965-01-22
•
Granted: 1968-12-03
•
Expires: 1985-01-22
Abstract
No abstract record available.
Inventors
- 👤 Hans G Dill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:12
CPC Classifications
H; H10; H10D; H10D48/00; H10D48/30; H10D48/32; H10D48/36; H10D30/00; H10D30/60; H10D99/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
53 words
A FIELD EFFECT TRANSISTOR WHICH COMPRISES: SEMICONDUCTOR MATERIAL HAVING ADJACENT A SURFACE THEREOF FIRST AND SECOND INTERDIGITATED AREAS OF ONE CONDUCTIVITY TYPE SEPARATED BY A CHANNEL AREA OF OPPOSITE CONDUCTIVITY TYPE; AND A METAL GATE OVERLYING AND INSULTATED FROM SUBSTANTIAL INTERDIGITATED PORTIONS OF THE FIRST AND SECOND AREAS AND THE INTERVENING CHANNEL AREA.
Claim 2
Dependent Claim
53 words
A FIELD EFFECT TRANSISTOR WHICH COMPRISES: SEMICONDUCTOR MATERIAL HAVING ADJACENT A SURFACE THEREOF FIRST AND SECOND INTERDIGITATED AREAS OF ONE CONDUCTIVITY TYPE SEPARATED BY A CHANNEL AREA OF OPPOSITE CONDUCTIVITY TYPE; AND A METAL GATE OVERLYING AND INSULTATED FROM SUBSTANTIAL INTERDIGITATED PORTIONS OF THE FIRST AND SECOND AREAS AND THE INTERVENING CHANNEL AREA.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-12-03 | 1972-06-03 | 1972-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-12-03 | 1976-06-03 | 1976-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-12-03 | 1980-06-03 | 1980-12-03 | $7700.00 | Window Closed / Lapsed |