US3586930A
Expired / Lapsed
US
⏱️ 0.0 years remaining
High frequency,high power igfet with interdigital electrodes and plural looped gate
Assignee: US Philips Corp
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Filing: 1969-03-10
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Granted: 1971-06-22
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Expires: 1989-03-10
Abstract
Abstract This invention relates to insulated field effect transistors, particularly to insulated gate field effect transistors, suitable for high frequency, high power operation, in which the source and drain regions each comprise a base part and a plurality of finger parts extending therefrom, the source finger parts being interdigitated with the drain finger parts and the current carrying channel region being situated at surface region parts between adjacent source finger parts and drain finger parts, the gate electrode comprising a metal layer pattern having a plurality of limb portions situated above said surface region parts and extending substantially parallel to the longitudinal direction of the source and drain finger parts.
Inventors
- 👤 Mukunda Behari Das
- 👤 Richard Downing Josephy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 16:08
CPC Classifications
H; H10; H10W; H10W74/00; H10W74/40; H10D; H10D99/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
41 words
An insulated gate field effect transistor as set forth in claim 1 wherein adjacent pairs of the gate limb portions are joined together at their ends remote from the gate base portion by a conductive layer to form plural closed loops.
Claim 2
Dependent Claim
33 words
An insulated gate field effect transistor as set forth in claim 1 wherein the said one region is the source region whereby the gate base portion at least partly overlies the source region.
Claim 3
Dependent Claim
22 words
An insulated gate field effect transistor as set forth in claim 3 wherein the gate connection means lies above the source region.
Claim 4
Dependent Claim
36 words
An insulated gate field effect transistor as set forth in claim 3 wherein the gate electrode lies wholly within the area bounded by the conductive layer on the source base portion constituting the source electrical connection.
Claim 5
Dependent Claim
41 words
An insulated gate field effect transistor as set forth in claim 3 wherein the gate base portion lies partly above the channel region portions adjacent the drain finger ends and partly above the source finger parts adjacent the source base part.
Claim 6
Dependent Claim
35 words
An insulated gate field effect transistor as set forth in claim 3 wherein the source conductive layer connection lies substantially entirely on the source base part, the source finger parts being free of conductive layers.
Claim 7
Dependent Claim
26 words
An insulated gate field effect transistor as set forth in claim 3 wherein the source connection comprises insulated conductive layer parts on the source finger parts.
Claim 8
Dependent Claim
26 words
An insulated gate field effect transistor as set forth in claim 7 wherein the drain conductive layer connection lies substantially entirely on the drain base part.
Claim 9
Dependent Claim
33 words
An insulated gate field effect transistor as set forth in claim 8 wherein the drain conductive layer connection comprises portions on the drain fingers and extending from the part on the drain base.
Claim 10
Dependent Claim
34 words
An insulated gate field effect transistor as set forth in claim 1 wherein the semiconductor is silicon, and the insulating layer comprises silicon oxide on the silicon and silicon nitride on the silicon oxide.
Claim 11
Dependent Claim
35 words
An insulated gate field effect transistor as set forth in claim 1 wherein the gate limb portions are laterally offset from the drain fingers and thus overlie only the channel portions adjacent the source fingers.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-06-21 | 1974-12-21 | 1975-06-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-06-21 | 1978-12-21 | 1979-06-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-06-21 | 1982-12-21 | 1983-06-22 | $7700.00 | Window Closed / Lapsed |