Semiconductor memory device

Claim 2

A semiconductor memory device, comprising: a plurality of memory cells formed on a major surface of a semiconductor substrate, each having one transistor element and one capacitive element; a plurality of word lines formed by a first conductive layer on the major surface of said semiconductor substrate with an insulating layer therebetween, arranged parallel to each other and electrically connected to gate electrodes of transistor elements of corresponding said plurality of memory cells; and a plurality of bit lines formed by a second conductive layer positioned above said first conductive layer on the major surface of said semiconductor substrate, arranged parallel to each other and crossing said word lines, and electrically connected to one of source/drain regions of transistor elements of corresponding said plurality of memory cells; wherein a storage node constituting one electrode of the capacitive element of each said memory cell is formed by a third conductive layer positioned above said second conductive layer on the major surface of said semiconductor substrate, electrically connected to the other one of the source/drain regions of the transistor element of the corresponding memory cell, and arranged between adjacent two word lines and crossing over a bit line, with a longer side being parallel to the word lines and a shorter side being parallel to the bit lines.

Claim 3

The semiconductor memory device according to claim 1, wherein said storage node constituting one electrode of the capacitive element of each said memory cell has its shorter side portion extending on a bit line adjacent to that bit line which is connected to the corresponding memory cell.

Claim 4

The semiconductor memory device according to claim 1, further comprising an element isolating conductive layer formed by a fourth conductive layer positioned below said first conductive layer on the major surface of said semiconductor substrate, surrounding an element forming region on the semiconductor substrate for forming the transistor element of said memory cell, to which a prescribed potential is applied.

Claim 5

The semiconductor memory device according to claim 1, wherein said storage node constituting one electrode of the capacitive element of each said memory cell has a rough upper surface.

Claim 6

A semiconductor memory device according to claim 1, wherein said storage node constituting one electrode of the capacitive element of each said memory cell has a cylindrical portion extending vertical to the major surface of the semiconductor substrate.

Claim 7

A semiconductor memory device, comprising: a plurality of memory cells formed on a major surface of a semiconductor substrate, each including one transistor element and one capacitive element; a plurality of word lines formed by a first conductive layer on the major surface of said semiconductor substrate with an insulating layer therebetween, arranged parallel to each other and electrically connected to gate electrodes of transistor elements of corresponding said plurality of memory cells; and a plurality of bit lines formed by a second conductive layer positioned above said first conductive layer on the major surface of said semiconductor substrate, arranged parallel to each other and orthogonal to said word lines, and electrically connected to one of source/drain regions of transistor elements of corresponding said plurality of memory cells; wherein a storage node constituting one electrode of the capacitive element of each said memory cell is formed by a third conductive layer positioned above said second conductive layer on the major surface of said semiconductor substrate, electrically connected to the other one of the source/drain regions of the transistor element of the corresponding memory cell, and arranged between a word line to which the corresponding memory cell is connected and another word line adjacent to said word line on the side of the other one of the source/drain regions of the transistor element of the corresponding memory cell and crossing over a bit line to which the corresponding memory cell is connected.

Claim 8

A semiconductor memory device, comprising: a plurality of memory cells formed on a major surface of a semiconductor substrate, each including one transistor element and one capacitive element; a plurality of word lines formed by a first conductive layer on the major surface of said semiconductor substrate with an insulating layer therebetween, arranged parallel to each other and electrically connected to gate electrodes of transistor elements of corresponding said plurality of memory cells; and a plurality of bit lines formed by a second conductive layer positioned above said first conductive layer on the major surface of said semiconductor substrate, arranged parallel to each other and orthogonal to said word lines, and electrically connected to one of source/drain regions of transistor elements of corresponding said plurality of memory cells; wherein a storage node constituting one electrode of the capacitive element of each said memory cell is formed by a third conductive layer positioned above said second conductive layer on the major surface of said semiconductor substrate, electrically connected to the other one of the source/drain regions of the transistor element of the corresponding memory cell, and arranged between a word line to which the corresponding memory cell is connected and another word line adjacent to said word line on the side of the other one of the source/drain regions of the transistor element of the corresponding memory cell and crossing over a bit line to which the corresponding memory cell is connected.

Claim 9

A dynamic random access memory, comprising: a plurality of memory cells formed on a major surface of a semiconductor substrate, each having one field effect transistor and one capacitor; a plurality of word lines formed by a first conductive layer on the main surface of said semiconductor substrate with an insulating layer therebetween and arranged parallel to each other; and a plurality of bit lines formed by a second conductive layer positioned above said first conductive layer on the major surface of said semiconductor substrate, arranged parallel to each other and orthogonal to said word lines; wherein said field effect transistor includes first and second impurity regions formed on the major surface of said semiconductor substrate, and a gate electrode formed on a channel regions sandwiched between said first and second impurity regions with a gate insulating film interposed; said capacitor includes a storage node formed by a third conductive layer positioned above said second conductive layer on the major surface of said semiconductor substrate, and a cell plate arranged on and opposing to a surface of said storage node with a dielectric film interposed; said gate electrode being electrically connected to said word line, said first impurity region being electrically connected to said bit line, said second impurity region being electrically connected to said storage node, said storage node being formed to have a rectangular shape having longer and shorter sides, the longer side being arranged parallel to said word line and the shorter side being arranged parallel to said bit lines, and said storage node being arranged crossing over said bit line.

Claim 10

A dynamic random access memory, comprising: a plurality of memory cells formed on a major surface of a semiconductor substrate, each having one field effect transistor and one capacitor; a plurality of word lines formed by a first conductive layer on the main surface of said semiconductor substrate with an insulating layer therebetween and arranged parallel to each other; and a plurality of bit lines formed by a second conductive layer positioned above said first conductive layer on the major surface of said semiconductor substrate, arranged parallel to each other and orthogonal to said word lines; wherein said field effect transistor includes first and second impurity regions formed on the major surface of said semiconductor substrate, and a gate electrode formed on a channel regions sandwiched between said first and second impurity regions with a gate insulating film interposed; said capacitor includes a storage node formed by a third conductive layer positioned above said second conductive layer on the major surface of said semiconductor substrate, and a cell plate arranged on and opposing to a surface of said storage node with a dielectric film interposed; said gate electrode being electrically connected to said word line, said first impurity region being electrically connected to said bit line, said second impurity region being electrically connected to said storage node, said storage node being formed to have a rectangular shape having longer and shorter sides, the longer side being arranged parallel to said word line and the shorter side being arranged parallel to said bit lines, and said storage node being arranged crossing over said bit line.