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Patent US5610097A successfully refreshed from Google Patents.
US5610097A
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Method for forming electrode on semiconductor
Assignee: National Institute of Advanced Industrial Science and Technology
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Filing: 1996-03-14
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Granted: 1997-03-11
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Expires: 2016-03-14
Abstract
Abstract A method for forming electrodes on a semiconductor includes introducing at least one reactive oxidizing gas selected from the group consisting of ozone, atomic oxygen, nitrogen dioxide, oxygen ion and oxygen plasma to an oxide semiconductor surface and depositing electrode material on the oxide semiconductor surface without exposing the surface to the outside atmosphere.
Inventors
- 👤 Takashi Shimizu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:48
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; Y; Y10; Y10S; Y10S148/00; Y10S148/139; Y10S148/14
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
52 words
A method for forming electrodes on a semiconductor, comprising introducing at least one reactive oxidizing gas selected from the group consisting of ozone, atomic oxygen, nitrogen dioxide, oxygen ion and oxygen plasma to an oxide semiconductor surface and depositing electrode material on the oxide semiconductor surface without atmospheric exposure of the surface.
Claim 2
Independent Claim
52 words
A method for forming electrodes on a semiconductor, comprising introducing at least one reactive oxidizing gas selected from the group consisting of ozone, atomic oxygen, nitrogen dioxide, oxygen ion and oxygen plasma to an oxide semiconductor surface and depositing electrode material on the oxide semiconductor surface without atmospheric exposure of the surface.
Claim 3
Dependent Claim
26 words
A method according to claim 1, further comprising contacting electrode material with the reactive oxidizing gas at a temperature of from room temperature to 500° C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-10 | 2000-09-09 | 2001-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-10 | 2004-09-09 | 2005-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-10 | 2008-09-09 | 2009-03-11 | $7700.00 | Window Closed / Lapsed |