EP0304073A2
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EP
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Method for manufacturing semiconductor device with schottky electrodes
Assignee: Toshiba Corp
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Filing: 1988-08-19
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Granted: —
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Expires: 2008-08-19
Abstract
Abstract A method for manufacturing a semiconductor device with a Schottky electrode comprises the steps of subjecting the surface of a GaAs substrate (10) to a sputtering etching process in a sputtering processing chamber (1) of a sputtering device; and depositing Schottky electrode material by sputtering on the surface of the substrate (1) to form a Schottky electrode in the processing chamber (1) without exposing the substrate (10) to the atmosphere.
Inventors
- 👤 Kizashi Shimada
- 👤 Tatsuo Akiyama
- 👤 Yutaka Koshino
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:48
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D64/00; H10D64/01; H10D64/012; H10D64/0124; H10P14/00; H10P14/40; H10P14/42; H10P14/44
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
71 words
A method for manufacturing a semiconductor device with a Schottky electrode comprising the steps of: subjecting the surface of a GaAs substrate (10) to a spattering etching process in a spattering processing chamber (1) of a spattering device, and depositing Schottky electrode material by spattering on the surface of said substrate (1) to form a Schottky electrode (13) in said processing chamber (1) without exposing said substrate (10) to the atmosphere.
Claim 2
Independent Claim
71 words
A method for manufacturing a semiconductor device with a Schottky electrode comprising the steps of: subjecting the surface of a GaAs substrate (10) to a spattering etching process in a spattering processing chamber (1) of a spattering device, and depositing Schottky electrode material by spattering on the surface of said substrate (1) to form a Schottky electrode (13) in said processing chamber (1) without exposing said substrate (10) to the atmosphere.
Claim 3
Dependent Claim
21 words
A method according to claim 1, characterized in that said GaAs substrate (10) is chemically cleaned before said spattering etching step.
Claim 4
Dependent Claim
35 words
A method according to claim 1, characterized in that said spattering etching and spattering deposition steps are effected in an inert gas atmosphere, with said substrate (10) and a refractory metal respectively used as targets.
Claim 5
Dependent Claim
36 words
A method according to claim 1, characterized in that said spattering etching step is effected in an Ar atmosphere and said spattering deposition step is effected in an (Ar+N₂) atmosphere with WSi used as a target.
Claim 6
Independent Claim
149 words
A method of manufacturing a semiconductor device comprising the steps of: setting a GaAs substrate (11) having a main plane at a predetermined location in a spattering processing chamber (1); ion-implanting silicon ions (Si⁺) into the main plane of said GaAs substrate (11); annealing said GaAs substrate (11) to form an n-type impurity region (12) on the main plane of said GaAs substrate (11); chemically-cleaning said GaAs substrate (11) to remove an oxide film unintentionally formed on the main plane of said GaAs substrate (11); effecting spattering etching on said GaAs substrate (11) in an atmosphere of an inert gas (Ar), so that a surface of the main plane of said GaAs substrate (11) is partially removed; and effecting reactive spattering on the main plane of said GaAs substrate (11) in a given atmosphere to form a silicide film (WSi-Nx) on the main plane of said GaAs substrate (11).
Claim 7
Independent Claim
149 words
A method of manufacturing a semiconductor device comprising the steps of: setting a GaAs substrate (11) having a main plane at a predetermined location in a spattering processing chamber (1); ion-implanting silicon ions (Si⁺) into the main plane of said GaAs substrate (11); annealing said GaAs substrate (11) to form an n-type impurity region (12) on the main plane of said GaAs substrate (11); chemically-cleaning said GaAs substrate (11) to remove an oxide film unintentionally formed on the main plane of said GaAs substrate (11); effecting spattering etching on said GaAs substrate (11) in an atmosphere of an inert gas (Ar), so that a surface of the main plane of said GaAs substrate (11) is partially removed; and effecting reactive spattering on the main plane of said GaAs substrate (11) in a given atmosphere to form a silicide film (WSi-Nx) on the main plane of said GaAs substrate (11).
Claim 8
Dependent Claim
23 words
A method according to claim 5, characterized in that the main plane of said GaAs substrate (11) is defined by Miller indices [100].
Claim 9
Dependent Claim
21 words
A method according to claim 5, characterized in that said annealing step is performed in an atmosphere of an AsH₃ gas.
Claim 10
Dependent Claim
18 words
A method according to claim 5, characterized in that said chemically-cleaning step is performed by use of NH₄F.
Claim 11
Dependent Claim
23 words
A method according to claim 5, characterized in that said spattering etching step is performed in an atmosphere of an inert gas (Ar).
Claim 12
Dependent Claim
14 words
A method according to claim 9, characterized in that said inert gas includes Ar.
Claim 13
Dependent Claim
47 words
A method according to claim 9, characterized in that said reactive spattering step is performed in an atmosphere of an N₂ gas and said innert gas (Ar) to form a nitride film (13) of a metal silicide (WSi-Nx) on the main plane of said GaAs substrate (11).
References Cited (Backward Citations)
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