US5606202A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Planarized gate conductor on substrates with above-surface isolation
Assignee: International Business Machines Corp
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Filing: 1995-04-25
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Granted: 1997-02-25
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Expires: 2015-04-25
Abstract
Abstract Stringers and depth of focus problems in substrates having above-surface isolation schemes are avoided by applying a first portion of a gate conductor over the entire surface having above-surface isolation, selectively removing the gate conductor from above the isolation features of the above-surface isolation, and overcoating the entire surface with a second portion of gate conductor. The process has particular application to substrates that employ regions having field-shield isolation. An important feature of the invention is drawn to creating structures wherein gate conductor is applied to a substrate including both above-surface and below-surface isolation regions in a manner which leaves the gate conductor planarized over both the above-surface and below-surface regions.
Inventors
- 👤 Gary B. Bronner
- 👤 Jack A. Mandelman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:36
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/111; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01326; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10D64/517; H10D64/60; H10D64/66; H10D64/661; H10D64/662
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
178 words
A substrate having both above-surface isolation and below-surface isolation in first and second separate regions of said substrate, respectively, comprising: a first region of said substrate having below surface isolation with a top of said below-surface isolation positioned at or below an uppermost top surface of said substrate, said below-surface isolation extending below said uppermost top surface of said substrate; a second region of said substrate having above-surface isolation with a bottom of said above-surface isolation positioned at or above said uppermost top surface of said substrate, said above-surface isolation including a plurality of spaced apart isolation members which project above said uppermost top surface of said substrate, said second region of said substrate being separate from said first region; a first gate conductor portion positioned above said first region of said substrate and between said plurality of spaced apart isolation members in said second portion of said substrate; and a second gate conductor portion positioned over said first gate conductor portion, said second gate conductor being co-planar in both said first and second regions of said substrate.
Claim 2
Dependent Claim
178 words
A substrate having both above-surface isolation and below-surface isolation in first and second separate regions of said substrate, respectively, comprising: a first region of said substrate having below surface isolation with a top of said below-surface isolation positioned at or below an uppermost top surface of said substrate, said below-surface isolation extending below said uppermost top surface of said substrate; a second region of said substrate having above-surface isolation with a bottom of said above-surface isolation positioned at or above said uppermost top surface of said substrate, said above-surface isolation including a plurality of spaced apart isolation members which project above said uppermost top surface of said substrate, said second region of said substrate being separate from said first region; a first gate conductor portion positioned above said first region of said substrate and between said plurality of spaced apart isolation members in said second portion of said substrate; and a second gate conductor portion positioned over said first gate conductor portion, said second gate conductor being co-planar in both said first and second regions of said substrate.
Claim 3
Dependent Claim
20 words
The substrate of claim 1 wherein said below surface isolation in said first portion of said substrate comprises trench isolation.
Claim 4
Dependent Claim
20 words
The substrate of claim 1 wherein said above-surface isolation in said second portion of said substrate comprises field shield isolation.
Claim 5
Dependent Claim
19 words
The substrate of claim 1 wherein said above-surface isolation in said second portion of said substrate comprises thick dielectric.
Claim 6
Dependent Claim
19 words
The substrate of claim 1 wherein said first and second gate conductor portions are formed of the same material.
Claim 7
Dependent Claim
10 words
The substrate of claim 5 wherein said material is polysilicon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-25 | 2000-08-26 | 2001-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-25 | 2004-08-26 | 2005-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-25 | 2008-08-26 | 2009-02-25 | $7700.00 | Window Closed / Lapsed |