US5606186A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor integrated circuit including opposed substrates of different semiconductor materials and method of manufacturing the semiconductor integrated circuit
Assignee: Mitsubishi Electric Corp
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Filing: 1995-08-09
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Granted: 1997-02-25
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Expires: 2015-08-09
Abstract
Abstract An insulating film having a through hole aligned with an electrode on a first semiconductor element is formed on a first semiconductor substrate and a metal is disposed in the through hole. A second semiconductor element on a second semiconductor substrate is placed on the insulating film in such a way that an electrode of the second semiconductor element contacts the metal. Thus, a plurality of transistors having different performance characteristics and functions can be easily disposed adjacent to each other for improved integration.
Inventors
- 👤 Minoru Noda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 23:26
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/08; H10D84/0123; H10D88/00
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
132 words
A semiconductor integrated circuit comprising: a first semiconductor substrate having a top surface; a first semiconductor element on the top surface of said first semiconductor substrate; a first electrode on said first semiconductor element; a second semiconductor substrate made of a material different from said first semiconductor substrate, having a bottom surface, and arranged with the bottom surface opposite the top surface of said first semiconductor substrate; a second semiconductor element on the bottom surface of said second semiconductor substrate; a second electrode on said second semiconductor element; a solid electrically insulating film disposed between and contacting both the top surface of said first semiconductor substrate and the bottom surface opposite said second semiconductor substrate; and an electrical conductor extending through said insulating film from and connecting the first electrode to the.
Claim 2
Dependent Claim
132 words
A semiconductor integrated circuit comprising: a first semiconductor substrate having a top surface; a first semiconductor element on the top surface of said first semiconductor substrate; a first electrode on said first semiconductor element; a second semiconductor substrate made of a material different from said first semiconductor substrate, having a bottom surface, and arranged with the bottom surface opposite the top surface of said first semiconductor substrate; a second semiconductor element on the bottom surface of said second semiconductor substrate; a second electrode on said second semiconductor element; a solid electrically insulating film disposed between and contacting both the top surface of said first semiconductor substrate and the bottom surface opposite said second semiconductor substrate; and an electrical conductor extending through said insulating film from and connecting the first electrode to the.
Claim 3
Dependent Claim
24 words
The semiconductor integrated circuit in accordance with claim 1, wherein said second semiconductor substrate is arranged opposite only part of said first semiconductor substrate.
Claim 4
Dependent Claim
24 words
The semiconductor integrated circuit in accordance with claim 1, wherein said first semiconductor substrate is silicon, and said second semiconductor substrate is gallium arsenide.
Claim 5
Independent Claim
141 words
A method of manufacturing a semiconductor integrated circuit comprising: forming a first semiconductor element on a first surface of a first semiconductor substrate; forming a second semiconductor element on a first surface of a second semiconductor substrate made of a material different from the first semiconductor substrate; forming a first electrode on said first semiconductor element; forming a second electrode on said second semiconductor element; forming a solid electrically insulating film on and in contact with the first surface of said first semiconductor substrate and said first electrode; forming a through hole in said insulating film at a position aligned with said first electrode; filling the through hole with an electrically conductive material contacting said first electrode; and placing said second semiconductor substrate on and in contact with said insulating film so that said second electrode contacts said electrically conductive material.
Claim 6
Independent Claim
141 words
A method of manufacturing a semiconductor integrated circuit comprising: forming a first semiconductor element on a first surface of a first semiconductor substrate; forming a second semiconductor element on a first surface of a second semiconductor substrate made of a material different from the first semiconductor substrate; forming a first electrode on said first semiconductor element; forming a second electrode on said second semiconductor element; forming a solid electrically insulating film on and in contact with the first surface of said first semiconductor substrate and said first electrode; forming a through hole in said insulating film at a position aligned with said first electrode; filling the through hole with an electrically conductive material contacting said first electrode; and placing said second semiconductor substrate on and in contact with said insulating film so that said second electrode contacts said electrically conductive material.
Claim 7
Dependent Claim
50 words
The method of manufacturing a semiconductor integrated circuit in accordance with claim 4, wherein: forming said insulating film includes mixing an adhesive resin and an insulating resin to obtain a mixed resin; and applying said mixed resin to said first surface of said first semiconductor substrate and said first electrode.
Claim 8
Dependent Claim
28 words
The method of manufacturing a semiconductor integrated circuit in accordance with claim 4, wherein said first semiconductor substrate is silicon, and said second semiconductor substrate is gallium arsenide.
Claim 9
Dependent Claim
17 words
The semiconductor integrated circuit in accordance with claim 1, wherein said insulating film includes a polyimide resin.
Claim 10
Dependent Claim
22 words
The semiconductor integrated circuit in accordance with claim 1, wherein said insulating film has a thickness ranging from 1 to 100 microns.
Claim 11
Dependent Claim
22 words
The method of manufacturing a semiconductor integrated circuit in accordance with claim 4 including forming said insulating film of a polyimide resin.
Claim 12
Dependent Claim
21 words
The method of manufacturing a semiconductor integrated circuit in accordance with claim 5, wherein said insulating resin is a polyimide resin.
Claim 13
Dependent Claim
29 words
The method of manufacturing a semiconductor integrated circuit in accordance with claim 4 including forming said insulating film to a thickness within a range of 1 to 100 microns.
Claim 14
Dependent Claim
23 words
The method of manufacturing a semiconductor integrated circuit in accordance with claim 5 including, after applying said mixed resin, firing said mixed resin.
Claim 15
Dependent Claim
38 words
The method of manufacturing a semiconductor integrated circuit in accordance with claim 4 including, after filling the through hole and before placing said second semiconductor substrate on said insulating film, applying an adhesive layer to said insulating film.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-02-25 | 2000-08-26 | 2001-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-25 | 2004-08-26 | 2005-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-25 | 2008-08-26 | 2009-02-25 | $7700.00 | Window Closed / Lapsed |