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Semiconductor circuit device wiring with F.C.C. structure, plane oriention (100) and aligned with the current direction

Assignee: Individual
•
Filing: 1994-01-18
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Granted: 1997-02-11
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Expires: 2014-01-18
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Abstract

Abstract A semiconductor circuit device wiring is provided in which the wiring connected to a semiconductor element is composed of a crystalline material. The crystal axis direction along which nearest neighboring atoms in a single crystal constituting the crystalline material are arranged and the electric current direction through the wiring are crossed with each other at an angle of 22.5° or less.

Inventors

  • 👤 Kazuo Tsubouchi
  • 👤 Tadahiro Ohmi
  • 👤 Yohei Hiura
  • 👤 Kazuya Masu

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 14:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4405; H10W20/4421; H10W20/4437; H10W20/4441

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 97 words
A semiconductor circuit device comprising: a semiconductor body; an insulating film provided on said body; a contact hole formed in said insulating film; a conductor buried in said contact hole; and a wiring provided on both of said conductor and said insulating film; wherein said wiring comprises a face-centered cubic lattice structure of a single crystal metal having a plane orientation (100), and the crystal axis direction along which nearest neighboring atoms in said single crystal metal are arranged and the electric current direction through said wiring cross each other at an angle of 22.5° or less.
Claim 2
Dependent Claim 97 words
A semiconductor circuit device comprising: a semiconductor body; an insulating film provided on said body; a contact hole formed in said insulating film; a conductor buried in said contact hole; and a wiring provided on both of said conductor and said insulating film; wherein said wiring comprises a face-centered cubic lattice structure of a single crystal metal having a plane orientation (100), and the crystal axis direction along which nearest neighboring atoms in said single crystal metal are arranged and the electric current direction through said wiring cross each other at an angle of 22.5° or less.
Claim 3
Dependent Claim 115 words
A semiconductor circuit device comprising: a semiconductor body; an insulating film provided on said body; a contact hole formed in said insulating film; a conductor buried in said contact hole; and a wiring on both of said conductor and said insulating film, wherein said wiring comprises polycrystalline metal including a plurality of face-centered cubic lattice structure crystalline grains having a plane orientation (100), and not less than 50% of said crystalline grains have orientation such that the crystal axis direction along which nearest neighboring atoms in each of said crystalline grains constituting said polycrystalline metal are arranged and the electric current direction through said wiring cross each other at an angle of 22.5° or less.
Claim 4
Dependent Claim 115 words
A semiconductor circuit device comprising: a semiconductor body; an insulating film provided on said body; a contact hole formed in said insulating film; a conductor buried in said contact hole; and a wiring on both of said conductor and said insulating film, wherein said wiring comprises polycrystalline metal including a plurality of face-centered cubic lattice structure crystalline grains having a plane orientation (100), and not less than 50% of said crystalline grains have orientation such that the crystal axis direction along which nearest neighboring atoms in each of said crystalline grains constituting said polycrystalline metal are arranged and the electric current direction through said wiring cross each other at an angle of 22.5° or less.
Claim 5
Independent Claim 15 words
A device according to claims 1 or 2 wherein said metal is Al or Cu.

References Cited (Backward Citations)

US4439752A Cited
EP0407133A2 Cited
US5187561A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-02-11 2000-08-12 2001-02-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-02-11 2004-08-12 2005-02-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-02-11 2008-08-12 2009-02-11 $7700.00 Window Closed / Lapsed

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