Abstract A manufacturing method of a semiconductor device including the steps of forming an insulating film on a semiconductor substrate, further laminating an aluminum film or an alloy film primarily containing aluminum, forming a mask having a certain pattern on the aluminum film or the alloy film primarily comprising aluminum, removing the aluminum film or the alloy film primarily comprising aluminum by etching the film by chlorination and/or bromination with plasma except the part on which the mask is formed, exposing the film to a gas plasma not liable to deposit or oxidize but capable of substituting fluoride for chloride and/or bromide, or to a gas mixture plasma comprising hydrogen and the above-mentioned gas, washing with water, and removing the mask to provide a manufacturing method of a semiconductor devices which can prevent the occurence of defective goods caused by the corrosion of interconnections comprising an aluminum film, or an alloy film primarily comprising aluminum, reduce manufacturing cost, improve the yield rate and reliability of the semiconductor device.
A method of manufacturing a semiconductor device, comprising the steps of: forming an insulating film on a semiconductor substrate; forming a film comprising aluminum or an alloy comprising aluminum on said substrate; providing a mask with a pattern on the film comprising aluminum or the alloy comprising aluminum; removing the film comprising aluminum or the alloy comprising aluminum by etching the film comprising aluminum or the alloy comprising aluminum by chlorination and/or bromination with plasma except the part of the film comprising aluminum or the alloy comprising aluminum on which the mask is formed; exposing the film comprising aluminum or the alloy comprising aluminum to a gas mixture plasma comprising hydrogen and a gas that does not have a depositing or oxidizing effect but which substitutes fluoride for chloride and/or bromide; washing the substrate and the film comprising aluminum or the alloy comprising aluminum with water; and removing the mask.
Claim 2
Independent Claim
150 words
A method of manufacturing a semiconductor device, comprising the steps of: forming an insulating film on a semiconductor substrate; forming a film comprising aluminum or an alloy comprising aluminum on said substrate; providing a mask with a pattern on the film comprising aluminum or the alloy comprising aluminum; removing the film comprising aluminum or the alloy comprising aluminum by etching the film comprising aluminum or the alloy comprising aluminum by chlorination and/or bromination with plasma except the part of the film comprising aluminum or the alloy comprising aluminum on which the mask is formed; exposing the film comprising aluminum or the alloy comprising aluminum to a gas mixture plasma comprising hydrogen and a gas that does not have a depositing or oxidizing effect but which substitutes fluoride for chloride and/or bromide; washing the substrate and the film comprising aluminum or the alloy comprising aluminum with water; and removing the mask.
Claim 3
Dependent Claim
43 words
The method of manufacturing a semiconductor device according to claim 1, wherein the gas mixture plasma is a gas mixture plasma comprising hydrogen and at least one gas selected from the group consisting of CF 4 , NF 3 and SF 6 .
Claim 4
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 2, wherein the hydrogen concentration in the gas mixture plasma is from 0.1 to 50 volume %.
Claim 5
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 3, wherein the hydrogen concentration of the gas mixture plasma is from 1 to 4 volume %.
Claim 6
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 1, wherein the hydrogen concentration in the gas mixture plasma is from 0.1 to 50 volume %.
Claim 7
Dependent Claim
27 words
The method of manufacturing a semiconductor device according to claim 5, wherein the hydrogen concentration in the gas mixture plasma is from 1 to 4 volume %.