US5599729A
Expired / Lapsed
US
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Static random access memory cell and method of fabricating the same
Assignee: SK Hynix Inc
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Filing: 1995-09-14
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Granted: 1997-02-04
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Expires: 2015-09-14
Abstract
Abstract An SRAM cell and a method of fabricating the SRAM cell are disclosed. The method includes the steps of forming a plurality of active regions and field regions on a substrate, forming a first common gate electrode and two impurity-doped regions to form two first bulk transistors, forming a second common gate electrode and two impurity-doped regions to form two second bulk transistors, forming a gate oxide layer on the substrate, forming a conductive layer, and etching back the conductive layer to thereby form two thin film transistors.
Inventors
- 👤 Joon-Young Park
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 06:35
CPC Classifications
H; H10; H10B; H10B10/00; H10B10/12; H10B10/125
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
156 words
A method of fabricating an SRAM cell, comprising the steps of: forming a plurality of active regions and field regions on a substrate; forming a first common gate electrode and two first impurity-doped regions on said active regions to thereby form two first bulk transistors; forming a second common gate electrode and two second impurity-doped regions on said active regions separated from said first bulk transistors by a predetermined distance, to thereby form two second bulk transistors; forming a gate oxide layer on the overall surface of the substrate; depositing a conductive layer to form a thin film transistor body on said gate oxide layer; and etching back said conductive layer so that said conductive layer remains only on said first and second common gate electrodes, Vss connectors overlapping said common gate electrodes by a predetermined width, and transistor connectors overlapping said second common gate electrode by a predetermined width, thereby forming two thin film transistors.
Claim 2
Independent Claim
156 words
A method of fabricating an SRAM cell, comprising the steps of: forming a plurality of active regions and field regions on a substrate; forming a first common gate electrode and two first impurity-doped regions on said active regions to thereby form two first bulk transistors; forming a second common gate electrode and two second impurity-doped regions on said active regions separated from said first bulk transistors by a predetermined distance, to thereby form two second bulk transistors; forming a gate oxide layer on the overall surface of the substrate; depositing a conductive layer to form a thin film transistor body on said gate oxide layer; and etching back said conductive layer so that said conductive layer remains only on said first and second common gate electrodes, Vss connectors overlapping said common gate electrodes by a predetermined width, and transistor connectors overlapping said second common gate electrode by a predetermined width, thereby forming two thin film transistors.
Claim 3
Dependent Claim
55 words
A method of fabricating an SRAM cell as claimed in claim 1, wherein said step of forming said common gate electrodes comprises the steps of: depositing a polysilicon layer on said active regions; and depositing a cap nitride layer on said polysilicon layer and etching a predetermined portion of said cap nitride layer through photolithography.
Claim 4
Dependent Claim
57 words
A method of fabricating an SRAM cell as claimed in claim 1, wherein said step of forming said impurity-doped regions comprises the steps of: forming a sidewall oxide layer on the sides of said common gate electrodes; and forming said first and second impurity-doped regions on said active regions by implanting impurity ions into said active regions.
Claim 5
Dependent Claim
80 words
A method of fabricating an SRAM cell as claimed in claim 2, wherein said step of etching said cap nitride layer comprises the steps of: forming a BPSG layer in a valley formed between said common electrodes; etching back said BPSG layer so that said cap nitride layer formed on said common gate electrode is exposed; and etching said cap nitride layer so that said cap nitride layer remains only on said common gate electrodes of said second bulk transistors.
Claim 6
Dependent Claim
24 words
A method of fabricating an SRAM cell as claimed in claim 4, wherein said cap nitride layer is etched by a wet etch process.
Claim 7
Dependent Claim
84 words
A method of fabricating an SRAM cell as claimed in claim 1, further comprising the steps of: forming a conductive layer on the overall surface of the substrate; forming a mask pattern on said conductive layer so that the tops of said first and second bulk transistors overlap each other by a predetermined width; and etching back said conductive layer so that said conductive layer remains on only said first and second bulk transistors including said mask pattern, whereby said Vss connector is formed.
Claim 8
Dependent Claim
78 words
A method of fabricating an SRAM cell as claimed in claim 1, further comprising the steps of: forming a conductive layer on the overall surface of the substrate; forming a mask pattern on said conductive layer so that the tops of said second bulk transistors overlap each other by a predetermined width; and etching back said conductive layer to remain only on said first and second bulk transistors including said mask pattern, whereby said transistor connector is formed.
Claim 9
Dependent Claim
30 words
A method of fabricating an SRAM cell as claimed in claim 7, further comprising the step of disposing one end of said mask pattern which contacts said cap nitride layer.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2000-02-04 | 2000-08-05 | 2001-02-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-02-04 | 2004-08-05 | 2005-02-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-02-04 | 2008-08-05 | 2009-02-04 | $7700.00 | Window Closed / Lapsed |