US5597749A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making nonvolatile memory cell with crystallized floating gate
Assignee: Samsung Electronics Co Ltd
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Filing: 1995-05-22
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Granted: 1997-01-28
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Expires: 2015-05-22
Abstract
Abstract The nonvolatile memory cell of this invention includes a floating gate formed of an ultra-thin polycrystalline silicon film. Since the memory cell includes such an ultra-thin floating gate with a smooth surface, problems occurring in the patterning for the floating gate in conventional memory cells can be solved. In addition, the memory cells of the invention are suitable for device integration. Especially when the floating gate is formed of a polycrystalline silicon film, the device characteristics such as writing speed are remarkably improved.
Inventors
- 👤 Katsuji Iguchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:00
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/68; H10D30/01; H10D30/021; H10D30/0411; H10B; H10B99/00; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D64/411; H10D64/511; H10P; H10P10/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
160 words
A method of producing a nonvolatile memory cell comprising the steps of: forming an active region and an element isolating region on a semiconductor substrate; forming a first insulating film on the semiconductor substrate; forming a polycrystalline silicon film having a thickness of 55 nm or less on the first insulating film, the polycrystalline silicon film having a shape to cover at least the active region; forming a second insulating film on the polycrystalline silicon film; forming a conductive film on the second insulating film, etching the conductive film, the second insulating film and the polycrystalline silicon film sequentially, so as to form a control gate made of the conductive film and to form a floating gate made of the polycrystalline silicon film, wherein the step of forming the polycrystalline silicon film includes the steps of: depositing an amorphous silicon film on the first insulating film; and crystallizing the amorphous silicon film by annealing to form the polycrystalline silicon film.
Claim 2
Independent Claim
160 words
A method of producing a nonvolatile memory cell comprising the steps of: forming an active region and an element isolating region on a semiconductor substrate; forming a first insulating film on the semiconductor substrate; forming a polycrystalline silicon film having a thickness of 55 nm or less on the first insulating film, the polycrystalline silicon film having a shape to cover at least the active region; forming a second insulating film on the polycrystalline silicon film; forming a conductive film on the second insulating film, etching the conductive film, the second insulating film and the polycrystalline silicon film sequentially, so as to form a control gate made of the conductive film and to form a floating gate made of the polycrystalline silicon film, wherein the step of forming the polycrystalline silicon film includes the steps of: depositing an amorphous silicon film on the first insulating film; and crystallizing the amorphous silicon film by annealing to form the polycrystalline silicon film.
Claim 3
Dependent Claim
69 words
A method according to claim 1, wherein the step of forming the polycrystalline silicon film having the shape includes a step of depositing an oxidation resistant film on the polycrystalline silicon film, a step of patterning the oxidation resistant film, and a step of selectively oxidizing part of the polycrystalline silicon film laterally extending beyond the patterned oxidation resistant film using the patterned oxidation resistant film as a mask.
Claim 4
Dependent Claim
36 words
A method according to claim 1, wherein the annealing includes a first annealing step at a first temperature and a second annealing step at a second temperature, the second temperature being higher than the first temperature.
Claim 5
Dependent Claim
30 words
A method according to claim 1 wherein the step of depositing comprises depositing a non-doped amorphous silicon film and the floating gate formed from the polycrystalline silicon film is non-doped.
Claim 6
Dependent Claim
38 words
A method according to claim 1 including implanting in the amorphous silicon film a concentration of impurity ions such that the floating gate formed of polycrystalline silicon has an impurity concentration of 1×10 19 /cm 3 or less.
Claim 7
Independent Claim
148 words
A method of producing a nonvolatile memory cell comprising the steps of: forming a first insulating film on a semiconductor substrate; forming a floating gate having a thickness of 55 nm or less on the first insulating film; forming a second insulating film on the floating gate; and forming a control gate on the second insulating film, wherein the step of forming the floating gate includes the steps of: depositing an amorphous silicon film on the first insulating film; and crystallizing the amorphous silicon film by annealing to form a polycrystalline silicon,film; depositing an oxidation resistant film on the polycrystalline silicon film; patterning the oxidation resistant film into a shape, and selectively oxidizing part of the polycrystalline silicon film laterally extending beyond the patterned oxidation resistant film using the patterned oxidation resistant film as a mask, so as to form the floating gate from the polycrystalline silicon film.
Claim 8
Independent Claim
148 words
A method of producing a nonvolatile memory cell comprising the steps of: forming a first insulating film on a semiconductor substrate; forming a floating gate having a thickness of 55 nm or less on the first insulating film; forming a second insulating film on the floating gate; and forming a control gate on the second insulating film, wherein the step of forming the floating gate includes the steps of: depositing an amorphous silicon film on the first insulating film; and crystallizing the amorphous silicon film by annealing to form a polycrystalline silicon,film; depositing an oxidation resistant film on the polycrystalline silicon film; patterning the oxidation resistant film into a shape, and selectively oxidizing part of the polycrystalline silicon film laterally extending beyond the patterned oxidation resistant film using the patterned oxidation resistant film as a mask, so as to form the floating gate from the polycrystalline silicon film.
Claim 9
Dependent Claim
36 words
A method according to claim 6, wherein the annealing includes a first annealing step at a first temperature and a second annealing step at a second temperature, the second temperature being higher than the first temperature.
Claim 10
Dependent Claim
34 words
A method according to claim 6 wherein the step of depositing an amorphous silicon film comprises depositing a non-doped amorphous silicon film and the floating gate formed from the polycrystalline silicon film is non-doped.
Claim 11
Dependent Claim
38 words
A method according to claim 6 including implanting in the amorphous silicon film a concentration of impurity ions such that the floating gate formed of polycrystalline silicon has an impurity concentration of 1×10 19 /cm 3 or less.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
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