US5597744A
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Method of producing a silicon carbide semiconductor device
Assignee: Mitsubishi Materials Corp
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Filing: 1995-08-17
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Granted: 1997-01-28
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Expires: 2015-08-17
Abstract
Abstract Electrodes 16a and 16b composed of metal nitride made of either one of TiN, ZrN, HfN, VN and TaN are formed on an N-type source region 12 and drain region 13 of a P-type SiC substrate 11, respectively, Nitrogen-rich layers 12a and 13a are formed in surface layer portions of the regions 12 and 13 which the electrodes composed of metal nitride 16a and 16b contact respectively. The nitrogen-rich layer allows the contact resistivity of the electrode to be made small, A metal nitride composed of either one of TiN, ZrN, HfN, VN and TaN is interposed between a gate electrode 15 of Mo and an interconnection of Al 17c to prevent the reaction of the gate electrode and the interconnection.
Inventors
- 👤 Eiji Kamiyama
- 👤 Kazuhiro Fusegawa
- 👤 Nosho Toyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 01:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D12/00; H10D12/01; H10D12/031; H10D30/01; H10D30/021; H10D30/028; H10D30/0291; H10D30/0297; H10D62/00; H10D62/80; H10D62/83; H10D62/832; H10D62/8325; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0115; H10D64/60; H10D64/62; H10P; H10P30/00; H10P30/20; Y; Y10; Y10S; Y10S148/00; Y10S148/148; Y10S438/00; Y10S438/931
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
99 words
A method of producing a silicon carbide semiconductor device, comprising the steps of: forming N-type source/drain SiC regions (12, 13) on a P-type silicon carbide substrate (11); forming an insulating film (14a) on said silicon carbide substrate (11) between said source/drain SiC regions (12, 13); forming a gate electrode (15) on said insulating film (14a); forming on said gate electrode (15) and said source/drain SiC regions (12, 13) metal nitride layers (16c, 16a, 16b) composed of either one of TiN, ZrN, HfN, VN and TaN; and forming interconnections (17c, 17a, 17b) on said metal nitride layers (16c, 16a, 16b).
Claim 2
Independent Claim
99 words
A method of producing a silicon carbide semiconductor device, comprising the steps of: forming N-type source/drain SiC regions (12, 13) on a P-type silicon carbide substrate (11); forming an insulating film (14a) on said silicon carbide substrate (11) between said source/drain SiC regions (12, 13); forming a gate electrode (15) on said insulating film (14a); forming on said gate electrode (15) and said source/drain SiC regions (12, 13) metal nitride layers (16c, 16a, 16b) composed of either one of TiN, ZrN, HfN, VN and TaN; and forming interconnections (17c, 17a, 17b) on said metal nitride layers (16c, 16a, 16b).
Claim 3
Dependent Claim
46 words
A method of producing a silicon carbide semiconductor device according to claim 1, wherein said forming a metal nitride layer includes forming nitrogen-rich layers (12a, 13a) in the surface layer portion of said source/drain SiC regions (12, 13) when said metal nitride layers(16a, 16b) are formed.
Claim 4
Dependent Claim
68 words
A method of producing a silicon carbide semiconductor device according to claim 1, wherein said forming a metal nitride layer includes forming said metal nitride layers (16c, 16a, 16b) in a nitrogen ambient by a sputtering method using a metal target composed of either one of Ti, Zr, Hf, V and Ta or a metal nitride target composed of either one of TiN, ZrN, HfN, VN and TaN.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |