US5597443A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method and system for chemical mechanical polishing of semiconductor wafer
Assignee: Texas Instruments Inc
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Filing: 1994-08-31
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Granted: 1997-01-28
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Expires: 2014-08-31
Abstract
Abstract A method and system (10) for chemical mechanical polishing (CMP) semiconductor wafer (14) coats (22) semiconductor wafer (14) with a slurry having an predetermined pH value. Semiconductor wafer (14) is then polished with polishing pad (19). Then, CMP system (10) sprays semiconductor wafer (14) with an aqueous solution (30) and a pH controlling compound (34) for controlling the predetermined pH of the slurry and removing the slurry from the semiconductor wafer (14). The effect is minimize the number of particles remaining on semiconductor wafer (14) following the CMP process.
Inventors
- 👤 Eugene O. Hempel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 13:47
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/129; B; B24; B24B; B24B37/00; B24B37/04; B24B53/00; B24B53/017
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
85 words
A method for chemical mechanical polishing a semiconductor wafer, comprising the steps of: (a) coating the semiconductor wafer with a slurry having a pH value; (b) polishing the slurry-coated semiconductor wafer with a polishing pad; and (c) spraying the semiconductor wafer with an aqueous solution including a pH controlling compound for controlling the pH of said slurry and removing said slurry from the semiconductor wafer, said step of spraying including spraying water to the semiconductor wafer through a mist of an NH 4 OH mixture.
Claim 2
Independent Claim
85 words
A method for chemical mechanical polishing a semiconductor wafer, comprising the steps of: (a) coating the semiconductor wafer with a slurry having a pH value; (b) polishing the slurry-coated semiconductor wafer with a polishing pad; and (c) spraying the semiconductor wafer with an aqueous solution including a pH controlling compound for controlling the pH of said slurry and removing said slurry from the semiconductor wafer, said step of spraying including spraying water to the semiconductor wafer through a mist of an NH 4 OH mixture.
Claim 3
Dependent Claim
29 words
The method of claim 1, further comprising the step of placing the semiconductor wafer in a cassette directly after spraying the semiconductor wafer, without further buffing the semiconductor wafer.
Claim 4
Dependent Claim
27 words
The method of claim 1, wherein said polishing step and said spraying step cooperate to reduce particle defects in the semiconductor wafer to fewer than 20 particles.
Claim 5
Independent Claim
181 words
A method for polishing an electronic device, comprising the steps of: (a) placing the electronic device in a polishing system, the polishing system comprising the primary platen having a polishing pad for polishing the electronic device nd a cleansing station for cleansing the electronic device; (b) coating the electronic device with a slurry coating comprising a mixture of cleansing agents and abrasive materials; (c) polishing the electronic device by contacting the electronic device having the slurry coating with the polishing pad; (d) moving the electronic device to the cleansing station for removing the slurry coating from the electronic device; (e) removing the slurry coating from the electronic device using a pressurized pH controlling mixture for controlling the pH of the slurry coating, said step of removing the slurry including the step of mixing an NH 2 OH compound with an atomized spray from a plurality of water jets directing water in the direction of the electronic device; and (f) removing the electronic device from the polishing system by placing the electronic device in a cassette without further buffing the electronic device.
Claim 6
Independent Claim
181 words
A method for polishing an electronic device, comprising the steps of: (a) placing the electronic device in a polishing system, the polishing system comprising the primary platen having a polishing pad for polishing the electronic device nd a cleansing station for cleansing the electronic device; (b) coating the electronic device with a slurry coating comprising a mixture of cleansing agents and abrasive materials; (c) polishing the electronic device by contacting the electronic device having the slurry coating with the polishing pad; (d) moving the electronic device to the cleansing station for removing the slurry coating from the electronic device; (e) removing the slurry coating from the electronic device using a pressurized pH controlling mixture for controlling the pH of the slurry coating, said step of removing the slurry including the step of mixing an NH 2 OH compound with an atomized spray from a plurality of water jets directing water in the direction of the electronic device; and (f) removing the electronic device from the polishing system by placing the electronic device in a cassette without further buffing the electronic device.
Claim 7
Dependent Claim
13 words
The method of claim 4, wherein said electronic device is a semiconductor wafer.
Claim 8
Dependent Claim
71 words
The method of claim 4, further comprising the step of automatically placing said electronic device on said primary platen by robotically removing the electronic device from a first cassette formed to contain a plurality of the electronic devices and further wherein said coating step, said polishing step, and said slurring removing step are automatically controlled, and further robotically removing the electronic device from the polishing system to a second unload cassette.
Claim 9
Independent Claim
177 words
A method for polishing an electronic device, comprising the steps of: (a) placing the electronic device in a polishing system, the polishing system comprising the primary platen having a polishing pad for polishing the electronic device nd a cleansing station for cleansing the electronic device; (b) coating the electronic device with a slurry coating comprising a mixture of cleansing agents and abrasive materials; (c) polishing the electronic device by contacting the electronic device having the slurry coating with the polishing pad; (d) moving the electronic device to the cleansing station for removing the slurry coating from the electronic device; (e) removing the slurry coating from the electronic device using a pressurized pH controlling mixture for controlling the pH of the slurry coating, said step of removing the slurry including the step of mixing a surfactant compound with atomized spray that emits from a plurality of jets directing pressurized solvent to the electronic device; and (f) removing the electronic device from the polishing system by placing the electronic device in a cassette without further buffing the electronic device.
Claim 10
Independent Claim
177 words
A method for polishing an electronic device, comprising the steps of: (a) placing the electronic device in a polishing system, the polishing system comprising the primary platen having a polishing pad for polishing the electronic device nd a cleansing station for cleansing the electronic device; (b) coating the electronic device with a slurry coating comprising a mixture of cleansing agents and abrasive materials; (c) polishing the electronic device by contacting the electronic device having the slurry coating with the polishing pad; (d) moving the electronic device to the cleansing station for removing the slurry coating from the electronic device; (e) removing the slurry coating from the electronic device using a pressurized pH controlling mixture for controlling the pH of the slurry coating, said step of removing the slurry including the step of mixing a surfactant compound with atomized spray that emits from a plurality of jets directing pressurized solvent to the electronic device; and (f) removing the electronic device from the polishing system by placing the electronic device in a cassette without further buffing the electronic device.
Claim 11
Independent Claim
88 words
A method for chemical mechanical polishing a semiconductor wafer, comprising the steps of: coating the semiconductor wafer with a slurry having a pH value; polishing the slurry-coated semiconductor wafer with a polishing pad; and spraying the semiconductor wafer with an aqueous solution including a pH controlling compound for controlling the pH of said slurry and removing said slurry from the semiconductor wafer, said step of spraying including emitting a spray having a pressure of at least about 60 psia from a plurality of jets to the semiconductor wafer.
Claim 12
Independent Claim
88 words
A method for chemical mechanical polishing a semiconductor wafer, comprising the steps of: coating the semiconductor wafer with a slurry having a pH value; polishing the slurry-coated semiconductor wafer with a polishing pad; and spraying the semiconductor wafer with an aqueous solution including a pH controlling compound for controlling the pH of said slurry and removing said slurry from the semiconductor wafer, said step of spraying including emitting a spray having a pressure of at least about 60 psia from a plurality of jets to the semiconductor wafer.
Claim 13
Dependent Claim
25 words
The method of claim 8, further including the step of rotating the semiconductor wafer at about 100 RPM during the step of spraying the semiconductor.
Claim 14
Dependent Claim
27 words
The method of claim 8, in which the step of spraying includes spraying water to the semiconductor wafer through a mist of an NH 4 OH mixture.
Claim 15
Dependent Claim
33 words
The method of claim 8, in which the step of spraying includes mixing a surfactant compound with atomized spray that emits from a plurality of jets directing pressurized solvent to the semiconductor wafer.
Claim 16
Independent Claim
88 words
A method for chemical mechanical polishing a semiconductor wafer, comprising the steps of: coating the semiconductor wafer with a slurry having a pH value; polishing the slurry-coated semiconductor wafer with a polishing pad; and spraying the semiconductor wafer with an aqueous solution including a pH controlling compound for controlling the pH of said slurry and removing said slurry from the semiconductor wafer, said step of spraying including mixing a surfactant compound with atomized spray that emits from a plurality of jets directing pressurized solvent to the semiconductor wafer.
Claim 17
Independent Claim
88 words
A method for chemical mechanical polishing a semiconductor wafer, comprising the steps of: coating the semiconductor wafer with a slurry having a pH value; polishing the slurry-coated semiconductor wafer with a polishing pad; and spraying the semiconductor wafer with an aqueous solution including a pH controlling compound for controlling the pH of said slurry and removing said slurry from the semiconductor wafer, said step of spraying including mixing a surfactant compound with atomized spray that emits from a plurality of jets directing pressurized solvent to the semiconductor wafer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-28 | 2000-07-29 | 2001-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-28 | 2004-07-29 | 2005-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-28 | 2008-07-29 | 2009-01-28 | $7700.00 | Window Closed / Lapsed |