Magnetoresistive structure with alloy layer having two substantially immiscible components

Claim 2

A magnetoresistive thin-film layer structure, said structure comprising: a substrate having a major surface portion; a magnetoresistive, anisotropic first ferromagnetic thin-film provided on said substrate major surface portion; an intermediate layer provided on said first ferromagnetic thin-film with a thickness of less than 30 Å, said intermediate layer being formed of a substantially nonmagnetic, conductive alloy having two substantially immiscible components therein; and a magnetoresistive, anisotropic second ferromagnetic thin-film provided on said intermediate layer.

Claim 3

The structure of claim 1 wherein said substrate major surface portion is electrically insulative.

Claim 4

The structure of claim 1 wherein said first ferromagnetic thin-film has a thickness of less than 100 Å.

Claim 5

The structure of claim 1 wherein said first ferromagnetic thin-film is a two strata film with that strata thereof at said intermediate layer having a greater magnetic moment than that strata remaining.

Claim 6

The structure of claim 1 wherein said intermediate layer has substantially that same form in that same crystal lattice class as does said first ferromagnetic thin-film.

Claim 7

The structure of claim 1 wherein said alloy is an eutectic alloy.

Claim 8

The structure of claim 1 wherein said substantially immiscible components are copper and silver.

Claim 9

The structure of claim 1 wherein said substantially immiscible components are copper and gold.

Claim 10

The structure of claim 1 wherein said second ferromagnetic thin-film has a thickness of less than 100 Å.

Claim 11

The structure of claim 1 wherein said second ferromagnetic thin-film is a two strata film with that strata thereof at said intermediate layer having a greater magnetic moment than that strata remaining.

Claim 12

The structure of claim 1 wherein said first ferromagnetic thin-film has that same form in that same crystal lattice class as does said intermediate layer.

Claim 13

The structure of claim 2 wherein said substrate is an amorphous material at said major surface portion thereof.

Claim 14

The structure of claim 2 wherein said substrate is a crystalline material at said major surface portion thereof.

Claim 15

The structure of claim 4 wherein said first strata of said first ferromagnetic thin-film is on said substrate major surface and comprises a mixture of cobalt, iron and nickel, and wherein said second strata thereof supports said intermediate layer and comprises a mixture of cobalt and iron.

Claim 16

The structure of claim 4 wherein said first strata of said first ferromagnetic thin-film is on said substrate major surface and has a particular form in a crystal lattice class, and wherein said second strata thereof supports said intermediate layer and has that same form in that same crystal lattice class as does said first strata.

Claim 17

The structure of claim 5 wherein said intermediate layer and said first ferromagnetic thin-film each have approximately equal lattice constants.

Claim 18

The structure of claim 6 wherein said eutectic alloy has one said component therein in greater proportion than that one remaining, and with that one component remaining being present in said eutectic alloy in an amount sufficient to permit antiferromagnetic coupling between said first and second ferromagnetic thin-films.

Claim 19

The structure of claim 7 wherein said silver is present in said copper in said alloy in an amount sufficient to permit antiferromagnetic coupling between said first and second ferromagnetic thin-films.

Claim 20

The structure of claim 8 wherein said gold is present in said copper in said alloy in an amount sufficient to permit antiferromagnetic coupling between said first and second ferromagnetic thin-films.

Claim 21

The structure of claim 10 wherein said first strata of said second ferromagnetic thin-film is on said intermediate layer and comprises a mixture of cobalt and iron, and wherein said second strata thereof is on said first strata thereof and comprises a mixture of cobalt, iron and nickel.

Claim 22

The structure of claim 10 wherein said first strata of said second ferromagnetic thin-film is on said intermediate layer and has that same form in that same crystal class as does said intermediate layer, and wherein said second strata thereof is on said first strata thereof and has that same form in that same crystal lattice class as does said first strata.

Claim 23

The structure of claim 11 wherein said intermediate layer and said first ferromagnetic thin-film each have approximately equal lattice constants.

Claim 24

A magnetoresistive thin-film layered structure, said structure comprising: a substrate having a major surface portion; a magnetoresistive, anisotropic first ferromagnetic thin-film provided on said substrate major surface portion; an intermediate layer provided on said first ferromagnetic thin-film with a thickness of less than 30 Å, said intermediate layer being formed of a substantially non-magnetic, conductive alloy having two substantially immiscible components therein; and a magnetoresistive, anisotropic second ferromagnetic thin-film provided on said intermediate layer, said alloy in said intermediate layer having one said component therein in greater proportion than that one remaining and of a kind that permits antiferromagnetic coupling between said first and second ferromagnetic thin-films, and with that one component remaining being present in said alloy in an amount sufficient to permit antiferromagnetic coupling between said first and second ferromagnetic thin-films.

Claim 25

A magnetoresistive thin-film layered structure, said structure comprising: a substrate having a major surface portion; a magnetoresistive, anisotropic first ferromagnetic thin-film provided on said substrate major surface portion; an intermediate layer provided on said first ferromagnetic thin-film with a thickness of less than 30 Å, said intermediate layer being formed of a substantially non-magnetic, conductive alloy having two substantially immiscible components therein; and a magnetoresistive, anisotropic second ferromagnetic thin-film provided on said intermediate layer, said alloy in said intermediate layer having one said component therein in greater proportion than that one remaining and of a kind that permits antiferromagnetic coupling between said first and second ferromagnetic thin-films, and with that one component remaining being present in said alloy in an amount sufficient to permit antiferromagnetic coupling between said first and second ferromagnetic thin-films.

Claim 26

The structure of claim 23 wherein said first ferromagnetic thin-film is a two strata film with that strata thereof at said intermediate layer having a greater magnetic moment than that strata remaining.

Claim 27

The structure of claim 23 wherein said alloy is an eutectic alloy.

Claim 28

The structure of claim 23 wherein said substantially immiscible components are copper and silver.

Claim 29

The structure of claim 23 wherein said substantially immiscible components are copper and gold.

Claim 30

The structure of claim 23 wherein said first and second ferromagnetic thin-films have a thickness of less than 100 Å.

Claim 31

The structure of claim 23 wherein said second ferromagnetic thin-film is a two strata film with that strata thereof at said intermediate layer having a greater magnetic moment than that strata remaining.

Claim 32

A magnetoresistive thin-film layered structure, said structure comprising: a substrate having a major surface portion; a non-magnetostrictive, magnetoresistive, anisotropic first ferromagnetic thin-film provided on said substrate major surface; and a non-magnetostrictive, magnetoresistive, anisotropic second ferromagnetic thin-film provided on said first ferromagnetic thin-film with a magnetic moment differing therefrom to form a first composite thin-film therewith, said first composite thin-film being substantially free of magnetostriction.

Claim 33

A magnetoresistive thin-film layered structure, said structure comprising: a substrate having a major surface portion; a non-magnetostrictive, magnetoresistive, anisotropic first ferromagnetic thin-film provided on said substrate major surface; and a non-magnetostrictive, magnetoresistive, anisotropic second ferromagnetic thin-film provided on said first ferromagnetic thin-film with a magnetic moment differing therefrom to form a first composite thin-film therewith, said first composite thin-film being substantially free of magnetostriction.

Claim 34

The structure of claim 30 wherein said substrate major surface portion is electrically insulative.

Claim 35

The structure of claim 30 wherein said first composite thin-film has a thickness of less than 100 Å.

Claim 36

The structure of claim 1 wherein said second ferromagnetic thin-film has a composition differing from that of said first ferromagnetic thin-film.

Claim 37

The structure of claim 30 further comprising: an intermediate layer provided on said second ferromagnetic thin-film with a thickness of less than 50 Å; a non-magnetostrictive, magnetoresistive, anisotropic third ferromagnetic thin-film provided on said intermediate layer; and a non-magnetostrictive, magnetoresistive, anisotropic fourth ferromagnetic thin-film provided on said third ferromagnetic thin-film to form a second composite thin-film therewith, said second composite thin-film being substantially free of magnetostriction.

Claim 38

The structure of claim 31 wherein said substrate is an amorphous material at said major surface portion thereof.

Claim 39

The structure of claim 32 wherein said substrate is a crystalline material at said major surface portion thereof.

Claim 40

The structure of claim 32 wherein said second ferromagnetic thin-film has a thickness of less than 25 Å.

Claim 41

The structure of claim 33 wherein said first ferromagnetic thin-film has a particular form in a crystal lattice class, and wherein said second ferromagnetic thin-film has that same form in that same crystal lattice class as does said first ferromagnetic thin-film.

Claim 42

The structure of claim 33 wherein said first ferromagnetic thin-film has a thickness differing from that of said second ferromagnetic thin-film.

Claim 43

The structure of claim 33 wherein said second ferromagnetic thin-film has a magnetic moment greater than that of said first ferromagnetic thin-film.

Claim 44

The structure of claim 34 wherein said intermediate layer has a thickness of less than 30 Å.

Claim 45

The structure of claim 34 wherein said intermediate layer has substantially that same form in that same crystal lattice class and does said second ferromagnetic thin-film.

Claim 46

The structure of claim 34 wherein said intermediate layer is formed of a substantially non-magnetic, conductive alloy.

Claim 47

The structure of claim 34 wherein said second composite thin-film has a thickness of less than 100 Å.

Claim 48

The structure of claim 34 wherein said third ferromagnetic thin-film has a composition differing from that of said fourth ferromagnetic thin-film.

Claim 49

The structure of claim 44 wherein said third ferromagnetic thin-film has a thickness of less than 25 Å.

Claim 50

The structure of claim 45 wherein said third ferromagnetic thin-film has a thickness differing from that of said fourth ferromagnetic thin-film.

Claim 51

The structure of claim 45 wherein said third ferromagnetic thin-film has a magnetic moment greater than that of said fourth ferromagnetic thin-film.

Claim 52

A magnetoresistive thin-film layered structure, said structure comprising: a substrate having a major surface portion; a magnetoresistive, anisotropic first ferromagnetic thin-film provided on said substrate major surface portion; an intermediate layer provided on said first ferromagnetic thin-film with a thickness of less than 30 Å, said intermediate layer being formed of an alloy comprising copper and gold; and a magnetoresistive, anisotropic second ferromagnetic thin-film provided on said intermediate layer, said gold being present in said copper in said alloy in said intermediate layer in an amount sufficient to permit antiferromagnetic coupling between said first and second ferromagnetic thin-films.

Claim 53

A magnetoresistive thin-film layered structure, said structure comprising: a substrate having a major surface portion; a magnetoresistive, anisotropic first ferromagnetic thin-film provided on said substrate major surface portion; an intermediate layer provided on said first ferromagnetic thin-film with a thickness of less than 30 Å, said intermediate layer being formed of an alloy comprising copper and gold; and a magnetoresistive, anisotropic second ferromagnetic thin-film provided on said intermediate layer, said gold being present in said copper in said alloy in said intermediate layer in an amount sufficient to permit antiferromagnetic coupling between said first and second ferromagnetic thin-films.

Claim 54

The structure of claim 1 wherein said alloy has one said component therein in greater proportion than that one remaining, and with that one component remaining being present in said alloy in an amount sufficient to permit antiferromagnetic coupling between said first and second ferromagnetic thin-films.