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EP0506433A1
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Magnetoresistance effect element
Assignee: Toshiba Corp
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Filing: 1992-03-27
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Granted: —
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Expires: 2012-03-27
Abstract
Abstract A magnetoresistance effect element comprises the multilayer formed by alternately stacking magnetic and nonmagnetic layers (2, 3). The magnetic layers (3) containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni. Any two magnetic layers adjacent to each other with one of the nonmagnetic layer interposed therebetween are antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.
Inventors
- 👤 Yoshiaki c/o Intellectual Property Div. Saito
- 👤 Shino c/o Intellectual Property Div. Okuno
- 👤 Koichiro C/O Intellectual Property Div. Inomata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 07:19
CPC Classifications
H; H10; H10N; H10N50/00; H10N50/80; H10N50/85; B; B82; B82Y; B82Y25/00; G; G01; G01R; G01R33/00; G01R33/02; G01R33/06; G01R33/09; G01R33/093; Y; Y10; Y10S; Y10S428/00; Y10S428/922; Y10S428/9265; Y10S428/928; Y10T; Y10T428/00; Y10T428/12; Y10T428/12465; Y10T428/12493; Y10T428/12632; Y10T428/12771; Y10T428/12861; Y10T428/12875; Y10T428/12896; Y10T428/12903; Y10T428/1291
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
61 words
A magnetoresistance effect element comprising the multilayer formed by alternately stacking magnetic and nonmagnetic layers (2, 3), said magnetic layers (3) containing at least two magnetic elements selected from a group of magnetic elements consisting of Fe, Co and Ni, any two neighboring magnetic layers (3) being antiferromagnetically coupled under a condition where a magnetic field is not substantially applied thereto.
Claim 2
Dependent Claim
29 words
A magnetoresistance effect element according to claim 1, characterized in that said magnetic layers (3) contain an Fe-Co alloy, an Fe-Ni alloy, an Fe-Ni-Co alloy or a Co-Ni alloy.
Claim 3
Dependent Claim
40 words
A magnetoresistance effect element according to claim 1, characterized in that said nonmagnetic layers (2) contain an element selected from a group consisting of Cu, Cr, Au, Ag and Ru or an alloy containing at least one of these elements.
Claim 4
Dependent Claim
19 words
A magnetoresistance effect element according to claim 1, characterized in that said nonmagnetic layers (2) contain a Cu-Au alloy.
Claim 5
Dependent Claim
36 words
A magnetoresistance effect element according to claim 1, characterized in that said magnetic layers (3) contain an alloy represented by Fe 1-x Co x (where 0.5 ≦ x < 1) and said nonmagnetic layers contain Cu.
Claim 6
Dependent Claim
37 words
A magnetoresistance effect element according to claim 1, characterized in that said magnetic layers (3) contain an alloy represented by Fe 1-x Co x (where 0 < x ≦ 0.8) and said nonmagnetic layers (2) contain Cr.
Claim 7
Dependent Claim
47 words
A magnetoresistance effect element according to claim 1, characterized in that said magnetic layers (3) contain an alloy represented by Ni 1-y (Fe 1-x Co x ) y (where 0 ≦ x ≦ 1 and 0 < y < 1) and said nonmagnetic layers (2) contain Cu.
Claim 8
Dependent Claim
48 words
A magnetoresistance effect element according to claim 1, characterized in that said magnetic layers (3) contain an alloy represented by Ni 1-x (Fe 1-x Co x ) y (where 0 ≦ x ≦ 0.9 and 0.7 ≦ y < 1) and said nonmagnetic layers (2) contain chromium (Cr).
Claim 9
Dependent Claim
19 words
A magnetoresistance effect element according to claim 1, characterized by further comprising a substrate (1) for supporting said multilayer.
Claim 10
Dependent Claim
29 words
A magnetoresistance effect element according to claim 9, characterized by further comprising a buffer layer formed of a soft magnetic material and arranged between said substrate and said multilayer.
Claim 11
Dependent Claim
23 words
A magnetoresistance effect element according to claim 1, characterized in that said magnetic layers (3) have a thickness of 2 to 100 Angstrom.
Claim 12
Dependent Claim
23 words
A magnetoresistance effect element according to claim 1, characterized in that said magnetic layers (3) have a thickness of 7 to 90 Angstrom.
Claim 13
Dependent Claim
23 words
A magnetoresistance effect element according to claim 1, characterized in that said nonmagnetic layers (2) have a thickness of 2 to 100 Angstrom.
Claim 14
Dependent Claim
23 words
A magnetoresistance effect element according to claim 1, characterized in that said nonmagnetic layers (2) have a thickness of 9 to 50 Angstrom.
Claim 15
Dependent Claim
21 words
A magnetoresistance effect element according to claim 9, characterized in that said substrate (1) is made of SiO₂, MgO, or Si.
References Cited (Backward Citations)
EP0406060A1
Cited
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