US5592007A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Membrane dielectric isolation transistor fabrication
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1995-06-07
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Granted: 1997-01-07
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Expires: 2015-06-07
Abstract
Abstract General purpose methods for the fabrication of integrated circuits from flexible membranes formed of very thin low stress dielectric materials, such as silicon dioxide or silicon nitride, and semiconductor layers. Semiconductor devices are formed in a semiconductor layer of the membrane. The semiconductor membrane layer is initially formed from a substrate of standard thickness, and all but a thin surface layer of the substrate is then etched or polished away. In another version, the flexible membrane is used as support and electrical interconnect for conventional integrated circuit die bonded thereto, with the interconnect formed in multiple layers in the membrane. Multiple die can be connected to one such membrane, which is then packaged as a multi-chip module. Other applications are based on (circuit) membrane processing for bipolar and MOSFET transistor fabrication, low impedance conductor interconnecting fabrication, flat panel displays, maskless (direct write) lithography, and 3D IC fabrication.
Inventors
- 👤 Glenn J. Leedy
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 14:48
CPC Classifications
H; H10; H10W; H10W90/00; H10P; H10P95/00; G; G03; G03F; G03F7/00; G03F7/70; G03F7/70483; G03F7/70605; G03F7/70653; G03F7/70658; G11; G11C; G11C29/00; G11C29/006; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10W10/00; H10W10/01; H10W10/011; H10W10/021; H10W10/061; H10W10/10; H10W10/181; H10W10/20; H10W70/00; H10W70/60; H10W70/611; H10W70/62; H10W70/65; H10W70/67; H10W70/68; H10W70/685; H10W70/688; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1345; G02F1/13452; G02F1/136; G02F1/1362; G02F1/136277; G02F1/136281; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; H10D89/00; H10D89/10; H10W70/682; H10W72/00; H10W72/20; H10W72/221; H10W72/29; H10W72/90; H10W72/941; H10W72/942; H10W90/701; H10W90/721; H10W90/724; Y; Y10; Y10S; Y10S148/00; Y10S148/135; Y10S438/00; Y10S438/928; Y10S438/938; Y10S438/942; Y10S438/967; Y10S438/977; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/49128; Y10T29/49155; Y10T29/49162; Y10T29/49165; Y10T29/49169; Y10T29/49171; Y10T29/49204; Y10T29/49208; Y10T29/4921
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
103 words
A field effect transistor comprising: a dielectric membrane having a surface tensile stress of 2 to 100 times less than the fracture strength of the dielectric and having a principal surface; a semiconductor film formed on the principal surface of the membrane, the semiconductor film including at least three doped layers; a contact to a first of the three doped layers formed through the membrane; a contact to a second of the doped layers formed on a principal surface of the semiconductor film: an insulating layer formed over an edge of the semiconductor film; and a gate electrode formed overlying the insulating layer.
Claim 2
Dependent Claim
103 words
A field effect transistor comprising: a dielectric membrane having a surface tensile stress of 2 to 100 times less than the fracture strength of the dielectric and having a principal surface; a semiconductor film formed on the principal surface of the membrane, the semiconductor film including at least three doped layers; a contact to a first of the three doped layers formed through the membrane; a contact to a second of the doped layers formed on a principal surface of the semiconductor film: an insulating layer formed over an edge of the semiconductor film; and a gate electrode formed overlying the insulating layer.
Claim 3
Dependent Claim
101 words
A field effect transistor comprising: a flexible dielectric membrane having a principal surface; a semiconductor film formed on the principal surface of the membrane, the semiconductor film including at least three doped layers, wherein a portion of the third layer extends over edges of the first and second layers; a contact to a first of the three doped layers formed through the membrane; a contact to a second of the doped layers formed on a principal surface of the semiconductor film; an insulating layer formed over an edge of the semiconductor film; and a gate electrode formed overlying the insulating layer.
Claim 4
Dependent Claim
101 words
A field effect transistor comprising: a flexible dielectric membrane having a principal surface; a semiconductor film formed on the principal surface of the membrane, the semiconductor film including at least three doped layers, wherein a portion of the third layer extends over edges of the first and second layers; a contact to a first of the three doped layers formed through the membrane; a contact to a second of the doped layers formed on a principal surface of the semiconductor film; an insulating layer formed over an edge of the semiconductor film; and a gate electrode formed overlying the insulating layer.
Claim 5
Dependent Claim
129 words
A field effect transistor comprising: a flexible dielectric membrane having a principal surface: a semiconductor film formed on the principal surface of the membrane, the semiconductor film including at least three doped layers, wherein the third of the three layers is located intermediate of the first and second layers, and a portion of the third layer extends over edges of the first and second layers; a contact to a first of the three doped layers formed through the membrane; a contact to a second of the doped layers formed on a principal surface of the semiconductor film; an insulating layer formed over an edge of the semiconductor film; and a gate electrode formed overlying the insulating layer, wherein the gate electrode overlies the extended portion of the third layer.
Claim 6
Dependent Claim
129 words
A field effect transistor comprising: a flexible dielectric membrane having a principal surface: a semiconductor film formed on the principal surface of the membrane, the semiconductor film including at least three doped layers, wherein the third of the three layers is located intermediate of the first and second layers, and a portion of the third layer extends over edges of the first and second layers; a contact to a first of the three doped layers formed through the membrane; a contact to a second of the doped layers formed on a principal surface of the semiconductor film; an insulating layer formed over an edge of the semiconductor film; and a gate electrode formed overlying the insulating layer, wherein the gate electrode overlies the extended portion of the third layer.
Claim 7
Dependent Claim
56 words
A bipolar transistor comprising: a flexible free-standing dielectric membrane having a principal surface and a thickness less than 50 μm; a semiconductor film formed on the principal surface and including at least three doped regions; a contact to the first of the three regions formed through the membrane; and contacts to the second and third regions.
Claim 8
Dependent Claim
56 words
A bipolar transistor comprising: a flexible free-standing dielectric membrane having a principal surface and a thickness less than 50 μm; a semiconductor film formed on the principal surface and including at least three doped regions; a contact to the first of the three regions formed through the membrane; and contacts to the second and third regions.
Claim 9
Dependent Claim
29 words
The device of claim 4, wherein the first of the three regions is a base region and the contacts to the second and third regions are substantially diametrically opposed.
Claim 10
Dependent Claim
95 words
A field effect transistor comprising: a flexible free-standing dielectric membrane having a principal surface and a thickness less than 50 μm; a first doped semiconductor layer region formed on the membrane; a second doped semiconductor layer region formed on the membrane; an epitaxial layer region formed on the membrane adjacent the first and second semiconductor layer regions; a first contact to the first semiconductor layer region; a second contact to the second semiconductor layer region; an insulating layer formed over an edge of the epitaxial layer region; and a gate electrode overlying the insulating layer.
Claim 11
Dependent Claim
95 words
A field effect transistor comprising: a flexible free-standing dielectric membrane having a principal surface and a thickness less than 50 μm; a first doped semiconductor layer region formed on the membrane; a second doped semiconductor layer region formed on the membrane; an epitaxial layer region formed on the membrane adjacent the first and second semiconductor layer regions; a first contact to the first semiconductor layer region; a second contact to the second semiconductor layer region; an insulating layer formed over an edge of the epitaxial layer region; and a gate electrode overlying the insulating layer.
Claim 12
Dependent Claim
15 words
The device of claim 6, wherein at least one contact is formed through the membrane.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-07 | 2000-07-08 | 2001-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-07 | 2004-07-08 | 2005-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-07 | 2008-07-08 | 2009-01-07 | $7700.00 | Window Closed / Lapsed |