Abstract An interconnecting method for a semiconductor device is disclosed in which a conductive layer containing aluminum is formed on a lower structure formed on a substrate. An insulating layer is formed on the conductive layer. A photoresist pattern for defining a portion where an opening is to be made is formed on the insulating layer. Then, the insulating layer is isotropically etched by wet etching with the photoresist pattern as an etching mask. The insulating layer remaining after the isotropical etching is taper-etched by RIE to form the opening. To ensure that the conductive layer is exposed by the opening, the resultant structure is overetched by using a mixed gas of fluorocarbon-containing gas and oxygen. This resultant structure is RIE-sputtered using fluorocarbon-containing gas such that polymer or nonvolatile by-products generated when the opening such as a via hole is formed, are completely removed.
An interconnecting method for a semiconductor device comprising the steps of: forming a first conductive layer containing aluminum on a lower structure; forming an insulating layer on said conductive layer; forming a photoresist pattern on said insulating layer which exposes said insulating layer on a portion where an opening is to be formed; isotropically etching part of said insulating layer by wet etching, using said photoresist pattern as an etching mask; anisotropically etching the remainder of said isotropically etched insulating layer by reactive ion etching using O 2 and CHF 3 as etching gases such that the diameter of said opening tapers downward; over-etching the resulting structure using O 2 and CF 4 as etching gases to ensure complete exposure of said conductive layer by said opening; RIE-sputtering the resulting structure using O 2 and CHF 3 as etching gases to remove a polymer and a non-volatile by-product and said photoresist pattern.
Claim 2
Dependent Claim
152 words
An interconnecting method for a semiconductor device comprising the steps of: forming a first conductive layer containing aluminum on a lower structure; forming an insulating layer on said conductive layer; forming a photoresist pattern on said insulating layer which exposes said insulating layer on a portion where an opening is to be formed; isotropically etching part of said insulating layer by wet etching, using said photoresist pattern as an etching mask; anisotropically etching the remainder of said isotropically etched insulating layer by reactive ion etching using O 2 and CHF 3 as etching gases such that the diameter of said opening tapers downward; over-etching the resulting structure using O 2 and CF 4 as etching gases to ensure complete exposure of said conductive layer by said opening; RIE-sputtering the resulting structure using O 2 and CHF 3 as etching gases to remove a polymer and a non-volatile by-product and said photoresist pattern.
Claim 3
Dependent Claim
36 words
An interconnecting method for a semiconductor device as claimed in claim 1, wherein said over-etching step is performed under a condition where the etching rates of said photoresist and said insulating layer are approximately the same.
Claim 4
Dependent Claim
40 words
An interconnecting method for a semiconductor device as claimed in claim 1, wherein said RIE sputtering step is performed under a condition where the etching rate of said photoresist is about 5 times higher than that of said insulating layer.
Claim 5
Dependent Claim
29 words
An interconnecting method as claimed in claim 1, further comprising, after said first conductive layer forming step, a step of forming a titanium nitride layer on said conductive layer.