US4938839A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of removing photoresist on a semiconductor wafer
Assignee: Fujitsu Ltd
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Filing: 1988-10-11
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Granted: 1990-07-03
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Expires: 2008-10-11
Abstract
Abstract After a semiconductor wafer is processed, a photoresist on the semiconductor wafer is removed by an irradiation of oxygen plasma while the wafer is cooled by a cooling device. The cooling device can be a susceptor or a stage on which the wafer is placed, and coolant flows through a pipe or duct installed thereto. Cooling of the wafer prevents the photoresist from being softened by the heat from the plasma. Thus, the inner side of the photoresist remains hard enough to support the affected surface portion of the photoresist, which is also difficult to remove, preventing the affected surface portion from sticking onto the surface of the wafer. Therefore, the affected portion can be more effectively irradiated by the plasma, and can be decomposed without leaving residue on the wafer. Reduced residue on the wafer surface contributes to improve production yield and quality of the products made from this wafer.
Inventors
- 👤 Shuzo Fujimura
- 👤 Yasunari Motoki
- 👤 Yoshikazu Kato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 12:52
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/42; G03F7/427
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
79 words
A method of ashing a photoresist coated on a semiconductor wafer, comprising the steps of: patterning a photoresist on a semiconductor wafer; ion-implanting a dopant into the semiconductor wafer through openings of the resist, said ion-implanting step affecting a surface of the photoresist by forming carbonates thereon; cooling the semiconductor wafer after the ion-implanting step by making use of cooling means; and ashing the photoresist by making use of a plasma of a reaction gas during said cooling step.
Claim 2
Independent Claim
79 words
A method of ashing a photoresist coated on a semiconductor wafer, comprising the steps of: patterning a photoresist on a semiconductor wafer; ion-implanting a dopant into the semiconductor wafer through openings of the resist, said ion-implanting step affecting a surface of the photoresist by forming carbonates thereon; cooling the semiconductor wafer after the ion-implanting step by making use of cooling means; and ashing the photoresist by making use of a plasma of a reaction gas during said cooling step.
Claim 3
Dependent Claim
12 words
A method of claim 1, wherein the reaction gas comprises oxygen gas.
Claim 4
Dependent Claim
24 words
A method of claim 2, wherein the reaction gas further comprises a gas selected from the group consisting of argon gas and nitrogen gas.
Claim 5
Dependent Claim
14 words
A method of claim 2, wherein the reaction gas further comprises a flouride gas.
Claim 6
Dependent Claim
16 words
A method of claim 1, wherein the plasma is produced by a radio frequency power excitation.
Claim 7
Dependent Claim
40 words
A method of claim 1, wherein said cooling means is a supporting member on which the semiconductor wafer is placed, said supporting member being provided with conduction means installed therein, a coolant being supplied to flow through said conduction means.
Claim 8
Independent Claim
108 words
A method of ashing a photoresist disposed on a semiconductor wafer, comprising the steps of: patterning a photoresist on a semiconductor wafer; ion-implanting a dopant into the semiconductor wafer through openings of the resist, said ion-implanting affecting a surface of the photoresist by forming carbonates, fluorides, aluminum chloride, or polymers, said affected surface being more resistant to ashing than an unaffected surface of the photoresist; placing the semiconductor wafer in a combined cooling and ashing apparatus; cooling the semiconductor wafer in the combined cooling and ashing apparatus; ashing the photoresist with a plasma of a reaction gas in the combination cooling and ashing apparatus during said cooling step.
Claim 9
Independent Claim
108 words
A method of ashing a photoresist disposed on a semiconductor wafer, comprising the steps of: patterning a photoresist on a semiconductor wafer; ion-implanting a dopant into the semiconductor wafer through openings of the resist, said ion-implanting affecting a surface of the photoresist by forming carbonates, fluorides, aluminum chloride, or polymers, said affected surface being more resistant to ashing than an unaffected surface of the photoresist; placing the semiconductor wafer in a combined cooling and ashing apparatus; cooling the semiconductor wafer in the combined cooling and ashing apparatus; ashing the photoresist with a plasma of a reaction gas in the combination cooling and ashing apparatus during said cooling step.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-07-02 | 1994-01-01 | 1994-07-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-07-02 | 1998-01-01 | 1998-07-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-07-02 | 2002-01-01 | 2002-07-03 | $7700.00 | Window Closed / Lapsed |