US5591663A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing ferroelectric capacitor with a hydrogen heat treatment
Assignee: Panasonic Holdings Corp
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Filing: 1995-02-14
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Granted: 1997-01-07
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Expires: 2015-02-14
Abstract
Abstract A manufacturing method of a semiconductor device comprises the steps:(a) forming a ferroelectric capacitor on a semiconductor substrate on which a MOS transistor is formed, (b) forming an interlayer insulating film which covers the whole semiconductor substrate, (c) forming first contact holes which reach diffusion layers of the MOS transistor, (d) after forming the first contact holes, providing a heat treatment in hydrogen atmosphere, (e) after the heat treatment, forming second contact holes which reach upper and lower electrodes of the ferroelectric capacitor on the interlayer insulating film, and (f) forming metal interconnection. Since the heat treatment in hydrogen atmosphere is provided before forming the second contact holes, a surface state density at interface between the semiconductor and a gate insulating film of the MOS transistor can be lowered without degrading the characteristics of ferroelectric capacitor.
Inventors
- 👤 Toru Nasu
- 👤 Atsuo Inoue
- 👤 Yoshihisa Nagano
- 👤 Akihiro Matsuda
- 👤 Koji Arita
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:03
CPC Classifications
H; H10; H10B; H10B53/00
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
131 words
A manufacturing method of a semiconductor device comprising the steps of: (a) forming a ferroelectric capacitor made of a lower electrode, a ferroelectric film and an upper electrode, on a semiconductor substrate on which an integrated circuit having a diffusion layer is formed; (b) forming an interlayer insulating film which covers said integrated circuit and said ferroelectric capacitor; (c) forming a first contact hole which reaches said diffusion layer, on said interlayer insulating film; (d) after forming said first contact hole, providing a heat treatment in hydrogen atmosphere; (e) after providing said heat treatment, forming second contact holes which reach said lower and upper electrodes, on said interlayer insulating film; (f) forming metal interconnection which reach said diffusion layer, said lower and upper electrodes, through said first and second contact holes.
Claim 2
Dependent Claim
131 words
A manufacturing method of a semiconductor device comprising the steps of: (a) forming a ferroelectric capacitor made of a lower electrode, a ferroelectric film and an upper electrode, on a semiconductor substrate on which an integrated circuit having a diffusion layer is formed; (b) forming an interlayer insulating film which covers said integrated circuit and said ferroelectric capacitor; (c) forming a first contact hole which reaches said diffusion layer, on said interlayer insulating film; (d) after forming said first contact hole, providing a heat treatment in hydrogen atmosphere; (e) after providing said heat treatment, forming second contact holes which reach said lower and upper electrodes, on said interlayer insulating film; (f) forming metal interconnection which reach said diffusion layer, said lower and upper electrodes, through said first and second contact holes.
Claim 3
Dependent Claim
23 words
The manufacturing method according to claim 1 wherein said heat treatment is provided at a temperature ranging from 350° C. to 550° C.
Claim 4
Dependent Claim
17 words
The manufacturing method according to claim 1 wherein said heat treatment is provided in plasma hydrogen atmosphere.
Claim 5
Dependent Claim
25 words
The manufacturing method according to claim 3 wherein said heat treatment in plasma hydrogen is provided at atmospheric pressure ranging from 0.01 to 0.1 Torr.
Claim 6
Dependent Claim
25 words
The manufacturing method according to claim 1 wherein said step of forming the interlayer insulating film comprises a step of forming a silicon nitride film.
Claim 7
Dependent Claim
22 words
The manufacturing method according to claim 5 wherein said step of forming the silicon nitride film uses a low pressure CVD method.
Claim 8
Dependent Claim
20 words
The manufacturing method according to claim 5 wherein said step of forming the silicon nitride film uses a sputtering method.
Claim 9
Dependent Claim
29 words
The manufacturing method according to claim 1 wherein said step of forming an interlayer insulating film comprises a step of forming a multilayer film including a silicon nitride film.
Claim 10
Dependent Claim
21 words
The manufacturing method according to claim 8 wherein said step of forming the multilayer film uses a low pressure CVD method.
Claim 11
Dependent Claim
19 words
The manufacturing method according to claim 8 wherein said step of forming the multilayer film uses a sputtering method.
Claim 12
Dependent Claim
35 words
The manufacturing method according to claim 8 wherein said step of forming the multilayer film comprises a step of forming dual layers fabricated by a silicon nitride film and a silicon oxide film including phosphorus.
References Cited (Backward Citations)
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| 3.5 Years (Year 4) | 2000-01-07 | 2000-07-08 | 2001-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-07 | 2004-07-08 | 2005-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-07 | 2008-07-08 | 2009-01-07 | $7700.00 | Window Closed / Lapsed |