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Structure and method for incorporating an inductively coupled plasma source in a plasma processing chamber

Assignee: Texas Instruments Inc
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Filing: 1995-06-07
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Granted: 1997-01-07
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Expires: 2015-06-07
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Abstract

Abstract A plasma processing chamber 10 having an inductively coupled plasma (ICP) source 12 mounted therein. The ICP source 12 comprises an antenna 14 encapsulated in epoxy 16 and surrounded by housing 18. The antenna 14 and epoxy 16 are hermetically sealed from plasma formation region 30. The antenna 14 is powered by at least one RF power supply 40 through at least one RF matching network 42. Dielectric capping plate 28 separates ICP source 12 from the plasma formation region 30 and may have a plurality of holes therein to provide a uniform showerhead distribution of process gases.

Inventors

  • 👤 Ajit P. Paranjpe
  • 👤 Cecil J. Davis
  • 👤 Robert T. Matthews

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-08 12:34
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32082; H01J37/321; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242; H05; H05H; H05H1/00; H05H1/24; H05H1/46

Claims Analysis

Total Claims: 8
Claim 1
Independent Claim 75 words
A method for incorporating an inductively coupled plasma source in a plasma processing chamber comprising the steps of: providing a plasma processing chamber having a chuck for holding a wafer; encapsulating a spiral antenna in an epoxy; surrounding said antenna and epoxy with a structurally rigid housing; hermetically sealing said epoxy; attaching said housing to an internal wall of said plasma processing chamber; and providing a dielectric capping plate to a side of said housing.
Claim 2
Independent Claim 75 words
A method for incorporating an inductively coupled plasma source in a plasma processing chamber comprising the steps of: providing a plasma processing chamber having a chuck for holding a wafer; encapsulating a spiral antenna in an epoxy; surrounding said antenna and epoxy with a structurally rigid housing; hermetically sealing said epoxy; attaching said housing to an internal wall of said plasma processing chamber; and providing a dielectric capping plate to a side of said housing.
Claim 3
Dependent Claim 33 words
The method of claim 1, further comprising the steps of supplying RF power to said spiral antenna; and providing at least one process gas to said plasma processing chamber to form a plasma.
Claim 4
Dependent Claim 20 words
The method of claim 2, further comprising the step of time modulating the RF power supplied to said spiral antenna.
Claim 5
Dependent Claim 29 words
The method of claim 1, further comprising the step of placing spacers between said housing and said internal wall to adjust the spacing between said housing and said chuck.
Claim 6
Dependent Claim 15 words
The method of claim 1, further comprising the step of contouring said dielectric capping plate.
Claim 7
Dependent Claim 18 words
The method of claim 1, further comprising the step of contouring said spiral antenna into a conical shape.
Claim 8
Dependent Claim 20 words
The method of claim 1, further comprising the step of placing electrically conductive plates on said side of said housing.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 2000-01-07 2000-07-08 2001-01-07 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2004-01-07 2004-07-08 2005-01-07 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2008-01-07 2008-07-08 2009-01-07 $7700.00 Window Closed / Lapsed

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