US5591302A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for etching copper containing metallic film and for forming copper containing metallic wiring
Assignee: Sony Corp
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Filing: 1995-07-25
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Granted: 1997-01-07
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Expires: 2015-07-25
Abstract
Abstract A process for dry etching a copper containing film formed on a substrate is performed by using an etching gas while heating at a temperature below 200° C. The etching gas is selectable from the group consisting of a mixed gas of a N containing gas, an O containing gas, a N and O containing gas, or a mixed gas of a N containing gas, an O containing gas and a F containing gas, or a mixed gas of a N and O containing gas and a F containing gas. By this etching gas, Cu(NO 3 ) 2 is formed to be sublimed.
Inventors
- 👤 Keiji Shinohara
- 👤 Junichi Sato
- 👤 Yukihiro Kamide
- 👤 Toshiharu Yanagida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 13:25
CPC Classifications
C; C23; C23F; C23F4/00; H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/063
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
138 words
A method for forming a copper wiring in a semiconductor device, comprising the steps of: sequentially forming a multilayer resist film which comprises an organic polymer film followed by an oxidation-resistant film directly on a copper containing metallic film; anisotropically etching the organic polymer film by using the oxidation-resistant mask as an etching mask, and by using an etching gas comprising a mixed gas of a first and a second gas, the first gas being selected from a group consisting of a mixed gas of a nitrogen containing gas and an oxygen containing gas, and a nitrogen oxide (NO x ) containing gas, and the second gas being selected from a group consisting of a chlorine containing gas and a bromine containing gas; and etching the copper containing metallic film by use of the etched organic polymer film.
Claim 2
Independent Claim
138 words
A method for forming a copper wiring in a semiconductor device, comprising the steps of: sequentially forming a multilayer resist film which comprises an organic polymer film followed by an oxidation-resistant film directly on a copper containing metallic film; anisotropically etching the organic polymer film by using the oxidation-resistant mask as an etching mask, and by using an etching gas comprising a mixed gas of a first and a second gas, the first gas being selected from a group consisting of a mixed gas of a nitrogen containing gas and an oxygen containing gas, and a nitrogen oxide (NO x ) containing gas, and the second gas being selected from a group consisting of a chlorine containing gas and a bromine containing gas; and etching the copper containing metallic film by use of the etched organic polymer film.
Claim 3
Dependent Claim
44 words
A method as claimed in claim 1 wherein said anisotropic etching is conducted while producing Cu(NO 3 ) 2 between active species formed by the etching gas and copper in the copper containing metallic film, and subliming the produced Cu(NO 3 ) 2 .
Claim 4
Dependent Claim
20 words
A method as claimed in claim 1 wherein at least a part of the etching gas is NO 3 .
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-01-07 | 2000-07-08 | 2001-01-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-01-07 | 2004-07-08 | 2005-01-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-01-07 | 2008-07-08 | 2009-01-07 | $7700.00 | Window Closed / Lapsed |