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US5091050A Expired / Lapsed US ⏱️ 0.0 years remaining

Dry etching method

Assignee: Toshiba Corp
•
Filing: 1988-03-30
•
Granted: 1992-02-25
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Expires: 2008-03-30
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Abstract

Abstract A dry etching method of etching a material to be etched including a transition metal using an etching gas including a carbon oxide gas is provided. The carbon oxide gas may be carbon monoxide gas, carbon dioxide gas, or mixtures of these gases. The carbon oxide gas is preferably in accordance with the relationship "R=X/3 to 200X" where "X" is the ratio of the number of transition metal atoms to the total number of metal atoms and "R" is the ratio of the number of molecules of oxide of carbon to the number of halogen atoms. Such a dry etching is particularly preferably carried out when the material to be etched is aluminum-silicon alloy, the transition metal is copper, the etching gas is mixed gas of chlorine gas, boron trichloride gas and helium gas, and the carbon oxide gas is carbon monoxide.

Inventors

  • 👤 Makoto Fujino
  • 👤 Isahiro Hasegawa
  • 👤 Masao Ito

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 09:20
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/20; H10P50/26; H10P50/264; H10P50/266; H10P50/267

Claims Analysis

Total Claims: 13
Claim 1
Independent Claim 64 words
A method of dry etching a material containing aluminum and a transition metal which comprises etching said material in a reaction chamber with a gaseous etchant containing an oxide of carbon in an amount sufficient to produce a reaction product containing said transition metal and having a vapor pressure such as to enable said reaction product to be readily exhausted from said reaction chamber.
Claim 2
Independent Claim 64 words
A method of dry etching a material containing aluminum and a transition metal which comprises etching said material in a reaction chamber with a gaseous etchant containing an oxide of carbon in an amount sufficient to produce a reaction product containing said transition metal and having a vapor pressure such as to enable said reaction product to be readily exhausted from said reaction chamber.
Claim 3
Dependent Claim 15 words
A method according to claim 1 wherein said gaseous etchant comprises at least one halogen.
Claim 4
Dependent Claim 19 words
A method according to claim 2 wherein said material to be etched comprises an alloy of aluminum and silicon.
Claim 5
Dependent Claim 12 words
A method according to claim 3 wherein said transition metal comprises copper.
Claim 6
Dependent Claim 20 words
A method according to claim 4 wherein said etchant comprises a mixture of gaseous chlorine, gaseous baron trichloride and helium.
Claim 7
Dependent Claim 13 words
A method according to claim 5 wherein said oxide of carbon is monoxide.
Claim 8
Dependent Claim 14 words
A method according to claim 5 wherein said oxide of carbon is carbon dioxide.
Claim 9
Dependent Claim 67 words
A method according to claim 2 wherein the amount of said oxide of carbon contained in the gaseous etchant is in accordance with the relationship: R=X/3 to 200X where "X" is the ratio of the number of transition metal atoms to the total number of metal atoms and "R" is the ratio of the number of molecules of oxide of carbon to the number of halogen atoms.
Claim 10
Dependent Claim 14 words
A method according to claim 8, wherein said oxide of carbon is carbon monoxide.
Claim 11
Dependent Claim 14 words
A method according to claim 8 wherein said oxide of carbon is carbon dioxide.
Claim 12
Dependent Claim 21 words
A method according to claim 1 wherein said material consists essentially of an alloy of aluminum, silicon and a transition metal.
Claim 13
Dependent Claim 12 words
A method according to claim 11 wherein said transition metal is copper.

References Cited (Backward Citations)

JPS5320769A Cited
JPS53146939A Cited
EP0020935A1 Cited
GB2081160A Cited
JPS58153334A Cited
US4412885A Cited
US4505782A Cited
US4618398A Cited
JPS60228687A Cited
US4659426A Cited
JPS6237382A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1995-02-24 1995-08-26 1996-02-25 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1999-02-24 1999-08-26 2000-02-25 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2003-02-24 2003-08-26 2004-02-25 $7700.00 Window Closed / Lapsed

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