Etching method for high melting metal

Abstract

Abstract PURPOSE:To etch a high melting metal at a high speed without using gaseous halogen by irradiating a carbon monoxide to the high melting metal to form and evaporate a carbonyl compd. CONSTITUTION:A sample 24 formed with the high melting metal film such as Mo or W is attached to a rotary holder 26 installed diagonally in an etching chamber 28. The gaseous carbon monoxide 2 is introduced into a plasma chamber 12 through a gas introducing port 4 and is converted to plasma by the arc discharge between a filament 6 and an anode 8. The plasma is confined by a magnet 10 to form an ion source 1. The CO ions in the plasma are led out into the chamber 28 by a lead-out electrode system 18 consisting of a lead- out electrode 14 and a deceleration electrode 16 and the greater part thereof are neutralized or made radical by the electrons released from a neutralizer 20. The radicals are irradiated to the sample 24. Etching is thereby executed as the high melting metal forms the carbonyl compd. by reacting with the carbon monoxide beam 22 and is evaporated.

Inventors

• 👤 Yoshinao Kato
• 👤 加藤　由尚

Bibliographic Details