Patent US5589712A successfully refreshed from Google Patents.
US5589712A
Expired / Lapsed
US
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Semiconductor integrated circuit device and a method of manufacturing the same
Assignee: Ricoh Co Ltd
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Filing: 1994-12-02
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Granted: 1996-12-31
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Expires: 2014-12-02
Abstract
Abstract A semiconductor integrated circuit device includes a substrate formed with semiconductor elements and a metal wiring having a laminated structure and provided on the substrate. The metal wiring includes a first layer including aluminum as a main component, and a second layer formed on the first layer. The second layer includes titanium and nitrogen as main components. The second layer includes more titanium than nitrogen in number of atoms. A third layer may be formed between the first and second layers. The third layer includes a compound of aluminum and titanium as a main component. A fourth layer may further be formed between the second and third layers. The fourth layer includes titanium as a main component and is free of aluminum.
Inventors
- 👤 Ikue Kawashima
- 👤 Katsunari Hanaoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 18:33
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S257/00; Y10S257/915; Y10S257/924
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
93 words
A semiconductor device comprising: a substrate formed with semiconductor elements; and a metal wiring having a laminated structure and provided on said substrate, said metal wiring including: a first layer A having aluminum as a main component; and a second layer D formed on said first layer A, said second layer D having as main components titanium and nitrogen in a given ratio such that a reflectance of said second layer D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light.
Claim 2
Dependent Claim
93 words
A semiconductor device comprising: a substrate formed with semiconductor elements; and a metal wiring having a laminated structure and provided on said substrate, said metal wiring including: a first layer A having aluminum as a main component; and a second layer D formed on said first layer A, said second layer D having as main components titanium and nitrogen in a given ratio such that a reflectance of said second layer D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light.
Claim 3
Dependent Claim
22 words
The semiconductor device as set forth in claim 1, wherein said ratio is 0.5≦N/Ti<1, where N represents nitrogen and Ti represents titanium.
Claim 4
Dependent Claim
115 words
A semiconductor device comprising: a substrate formed with semiconductor elements; and a metal wiring having a laminated structure and provided on said substrate, said metal wiring including: a first layer A having aluminum as a main component; a second layer B formed on said first layer A and having a compound of aluminum and titanium as a main component; and a third layer D formed on said second layer B, said third layer D having as main components titanium and nitrogen in a given ratio such that a reflectance of said third layer D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light.
Claim 5
Dependent Claim
115 words
A semiconductor device comprising: a substrate formed with semiconductor elements; and a metal wiring having a laminated structure and provided on said substrate, said metal wiring including: a first layer A having aluminum as a main component; a second layer B formed on said first layer A and having a compound of aluminum and titanium as a main component; and a third layer D formed on said second layer B, said third layer D having as main components titanium and nitrogen in a given ratio such that a reflectance of said third layer D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light.
Claim 6
Dependent Claim
22 words
The semiconductor device as set forth in claim 3, wherein said ratio is 0.5≦N/Ti<1, where N represents nitrogen and Ti represents titanium.
Claim 7
Dependent Claim
139 words
A semiconductor device comprising: a substrate formed with semiconductor elements; and a metal wiring having a laminated structure and provided on said substrate, said metal wiring including: a first layer A having aluminum as a main component; a second layer B formed on said first layer A and having a compound of aluminum and titanium as a main component; a third layer C formed on said second layer B and having titanium as a main component, said third layer C including no aluminum; and a fourth layer D formed on said third layer C, said fourth layer D having as main components titanium and nitrogen in a given ratio such that a reflectance of said fourth layer D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light.
Claim 8
Dependent Claim
139 words
A semiconductor device comprising: a substrate formed with semiconductor elements; and a metal wiring having a laminated structure and provided on said substrate, said metal wiring including: a first layer A having aluminum as a main component; a second layer B formed on said first layer A and having a compound of aluminum and titanium as a main component; a third layer C formed on said second layer B and having titanium as a main component, said third layer C including no aluminum; and a fourth layer D formed on said third layer C, said fourth layer D having as main components titanium and nitrogen in a given ratio such that a reflectance of said fourth layer D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light.
Claim 9
Dependent Claim
22 words
The semiconductor device as set forth in claim 5, wherein said ratio is 0.5≦N/Ti<1, where N represents nitrogen and Ti represents titanium.
Claim 10
Independent Claim
132 words
A method of manufacturing a semiconductor device including a substrate formed with semiconductor elements and a metal wiring provided on said substrate, said method comprising steps of: forming on said substrate a first film A having aluminum as a main component; forming on said first film A a second film D having titanium and nitrogen as main components, said second film D formed by sputtering a target made of titanium and using a mixed sputtering gas of argon and nitrogen such that a reflectance of said second film D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light; and forming said first and second films having a laminated structure into a given pattern of wiring to provide said metal wiring.
Claim 11
Independent Claim
132 words
A method of manufacturing a semiconductor device including a substrate formed with semiconductor elements and a metal wiring provided on said substrate, said method comprising steps of: forming on said substrate a first film A having aluminum as a main component; forming on said first film A a second film D having titanium and nitrogen as main components, said second film D formed by sputtering a target made of titanium and using a mixed sputtering gas of argon and nitrogen such that a reflectance of said second film D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light; and forming said first and second films having a laminated structure into a given pattern of wiring to provide said metal wiring.
Claim 12
Dependent Claim
30 words
The method as set forth in claim 7, wherein said second film has a ratio of titanium and nitrogen defined by 0.5≦N/Ti<1, where N represents nitrogen and Ti represents titanium.
Claim 13
Independent Claim
152 words
A method of manufacturing a semiconductor device including a substrate formed with semiconductor elements and a metal wiring provided on said substrate, said method comprising steps of: superposing on said substrate a first film A having aluminum as a main component; superposing titanium as a second film B on said first film A by sputtering A target made of titanium and using a sputtering gas of argon; superposing on said second film B a third film D having titanium and nitrogen as main components by adding nitrogen gas to said argon sputtering gas to form a mixed sputtering gas such that a reflectance of said third film D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light; and forming said first, second, and third films having a laminated structure into a given pattern of wiring to provide said metal wiring.
Claim 14
Independent Claim
152 words
A method of manufacturing a semiconductor device including a substrate formed with semiconductor elements and a metal wiring provided on said substrate, said method comprising steps of: superposing on said substrate a first film A having aluminum as a main component; superposing titanium as a second film B on said first film A by sputtering A target made of titanium and using a sputtering gas of argon; superposing on said second film B a third film D having titanium and nitrogen as main components by adding nitrogen gas to said argon sputtering gas to form a mixed sputtering gas such that a reflectance of said third film D is 30% or less for a given wavelength of exposing light in a range including wavelengths different from that of i-light; and forming said first, second, and third films having a laminated structure into a given pattern of wiring to provide said metal wiring.
Claim 15
Dependent Claim
30 words
The method as set forth in claim 9, wherein said third film has a ratio of titanium and nitrogen defined by 0.5≦N/Ti<1, where N represents nitrogen and Ti represents titanium.
Claim 16
Dependent Claim
70 words
A semiconductor device comprising: a substrate formed with semiconductor elements; and a metal wiring having a laminated structure and provided on said substrate, said metal wiring including: a first layer A having aluminum as a main component; and a second layer D formed on said first layer A, said second layer D having as main components titanium and nitrogen in a ratio of atoms N/Ti which is less than 0.8.
Claim 17
Dependent Claim
70 words
A semiconductor device comprising: a substrate formed with semiconductor elements; and a metal wiring having a laminated structure and provided on said substrate, said metal wiring including: a first layer A having aluminum as a main component; and a second layer D formed on said first layer A, said second layer D having as main components titanium and nitrogen in a ratio of atoms N/Ti which is less than 0.8.
Claim 18
Dependent Claim
18 words
A semiconductor device as in claim 11 in which said ratio or atoms N/Ti is 0.6 or less.
Claim 19
Independent Claim
113 words
A method of manufacturing a semiconductor device including a substrate formed with semiconductor elements and a metal wiring provided on said substrate, said method comprising steps of: forming on said substrate a first film A having aluminum as a main component; forming on said first film A a second film D having titanium and nitrogen as main components, in a ratio of atoms N/Ti which is less than 0.8, said second film D formed by sputtering a target made of titanium and using a mixed sputtering gas of argon and nitrogen; and forming said first and second films having a laminated structure into a given pattern of wiring to provide said metal wiring.
Claim 20
Independent Claim
113 words
A method of manufacturing a semiconductor device including a substrate formed with semiconductor elements and a metal wiring provided on said substrate, said method comprising steps of: forming on said substrate a first film A having aluminum as a main component; forming on said first film A a second film D having titanium and nitrogen as main components, in a ratio of atoms N/Ti which is less than 0.8, said second film D formed by sputtering a target made of titanium and using a mixed sputtering gas of argon and nitrogen; and forming said first and second films having a laminated structure into a given pattern of wiring to provide said metal wiring.
Claim 21
Dependent Claim
22 words
A method of manufacturing a semiconductor device as in claim 13 in which said ratio of atoms N/Ti is 0.6 or less.
References Cited (Backward Citations)
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-12-31 | 2000-07-01 | 2000-12-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-31 | 2004-07-01 | 2004-12-31 | $3760.00 | Window Closed / Lapsed |
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