US5345108A
Expired / Lapsed
US
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Semiconductor device having multi-layer electrode wiring
Assignee: NEC Corp
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Filing: 1992-02-25
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Granted: 1994-09-06
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Expires: 2012-02-25
Abstract
Abstract A semiconductor device having an electrode wiring which prevents generation of hillock and has good stress migration capability is disclosed. A multi layer film including at least two Al-Si-Cu alloy films and at least two titanium nitride films formed by reactive sputtering laminated alternately with the Al-Si-Cu alloy films has a high mechanical strength against deformation and can effectively prevent generation of hillock. Ti-Al intermetallic compounds are formed in grain boundaries and in interfaces, which is effective to restrict generation of a void. Propagation of a void can be prevented by the intermediate titanium nitride film. Further, the formation of the Ti-Al compounds is restricted and an increase of resistance is negligible.
Inventors
- 👤 Takamaro Kikkawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 05:26
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/425; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
36 words
A semiconductor device including an electrode wiring formed selectively on an insulating film on a silicon chip, said electrode wiring comprising an aluminum-silicon-copper alloy film and a titanium nitride film formed on said aluminum-silicon-copper alloy film.
Claim 2
Dependent Claim
36 words
A semiconductor device including an electrode wiring formed selectively on an insulating film on a silicon chip, said electrode wiring comprising an aluminum-silicon-copper alloy film and a titanium nitride film formed on said aluminum-silicon-copper alloy film.
Claim 3
Dependent Claim
34 words
The semiconductor device claimed in claim 1, wherein titanium-aluminum intermetallic compounds are formed in grain boundaries of said aluminum-silicon-copper alloy film and in an interface between said titanium nitride film and said aluminum-silicon-copper film.
Claim 4
Dependent Claim
87 words
A semiconductor device including an electrode wiring formed selectively on an insulating film on a silicon chip, said electrode wiring comprising a titanium film formed on said insulating film, a first titanium nitride film formed on said titanium film, a first aluminum-silicon-copper alloy film formed on said first titanium nitride film, a second titanium nitride film formed on said first aluminum-silicon-copper alloy film, a second aluminum-silicon-copper alloy film formed on said second titanium nitride film and a third titanium nitride film formed on said second aluminum-silicon-copper alloy.
Claim 5
Dependent Claim
87 words
A semiconductor device including an electrode wiring formed selectively on an insulating film on a silicon chip, said electrode wiring comprising a titanium film formed on said insulating film, a first titanium nitride film formed on said titanium film, a first aluminum-silicon-copper alloy film formed on said first titanium nitride film, a second titanium nitride film formed on said first aluminum-silicon-copper alloy film, a second aluminum-silicon-copper alloy film formed on said second titanium nitride film and a third titanium nitride film formed on said second aluminum-silicon-copper alloy.
Claim 6
Dependent Claim
38 words
The semiconductor device claimed in claim 3, wherein titanium-aluminum intermetallic compounds are formed in grain boundaries of said first and second aluminum-silicon-copper alloy films and in an interface between said aluminum-silicon-copper alloy films and said titanium nitride films.
References Cited (Backward Citations)
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