US4381595A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for preparing multilayer interconnection
Assignee: Mitsubishi Electric Corp
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Filing: 1980-09-04
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Granted: 1983-05-03
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Expires: 2000-09-04
Abstract
Abstract A multilayer interconnection is prepared by forming a stable insulating film on a nitride film which is formed on a first interconnection metal layer, and then, a second interconnection metal layer is formed on the insulating film. The insulating film can be made of aluminum oxide, an oxynitride or the other metal oxide. A silicon rich layer can be used for this purpose.
Inventors
- 👤 Masahiko Denda
- 👤 Shinichi Sato
- 👤 Wataru Wakamiya
- 👤 Hiroshi Harada
- 👤 Natsuro Tsubouchi
- 👤 Hirokazu Miyoshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 15:07
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336; H10P14/66; H10P14/668; H10P14/6681; H10P14/6682; H10W; H10W20/00; H10W20/01; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6524; H10P14/6526; H10P14/6529; H10P14/662; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
84 words
A process for preparing a multilayer interconnection which comprises sequentially forming a first interconnection metal layer, a layer insulating film and a second interconnection metal layer, wherein said interconnection metal layer is made of a low melting metal and said layer insulating film is made of a plasma enhanced chemical vapor deposited nitride film and an oxynitride film is formed on the surface layer of said nitride film so as to prevent mutual diffusion between the second interconnection metal layer and said nitride film.
Claim 2
Dependent Claim
84 words
A process for preparing a multilayer interconnection which comprises sequentially forming a first interconnection metal layer, a layer insulating film and a second interconnection metal layer, wherein said interconnection metal layer is made of a low melting metal and said layer insulating film is made of a plasma enhanced chemical vapor deposited nitride film and an oxynitride film is formed on the surface layer of said nitride film so as to prevent mutual diffusion between the second interconnection metal layer and said nitride film.
Claim 3
Dependent Claim
22 words
The process for preparing a multilayer interconnection according to claim 1 wherein said low melting metal is aluminum or an aluminum alloy.
References Cited (Backward Citations)
DE2045633A1
Cited
US3803705A
Cited
US3771218A
Cited
US4121240A
Cited
US4115795A
Cited
US4121241A
Cited
US4206472A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-05-02 | 1986-11-01 | 1987-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-05-02 | 1990-11-01 | 1991-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-05-02 | 1994-11-01 | 1995-05-03 | $7700.00 | Window Closed / Lapsed |