Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
178 words
A process for fabricating a semiconductor device having a multilevel interconnection, comprising: forming a trench on the surface of a first substrate to provide an element isolating region; forming a first insulating film on the surface of the trench and the first substrate; forming a first interconnection layer on the surface of the first insulating film; forming a second insulating film on the surface of the first substrate in such a manner that the first interconnection layer is covered and the trench is filled; forming a second interconnection layer on the second insulating film; forming sequentially in this order, a third insulating film and an adhesion layer on the surface of said second insulating film covering the second interconnection layer; bonding a second substrate on the surface of the adhesion layer; planarizing the back of the first substrate by removing the first substrate from the back side thereof and the bottom of the trench; and forming a fourth insulating film on the back of the first substrate, and forming a third interconnection layer on the fourth insulating film.
Claim 2
Dependent Claim
178 words
A process for fabricating a semiconductor device having a multilevel interconnection, comprising: forming a trench on the surface of a first substrate to provide an element isolating region; forming a first insulating film on the surface of the trench and the first substrate; forming a first interconnection layer on the surface of the first insulating film; forming a second insulating film on the surface of the first substrate in such a manner that the first interconnection layer is covered and the trench is filled; forming a second interconnection layer on the second insulating film; forming sequentially in this order, a third insulating film and an adhesion layer on the surface of said second insulating film covering the second interconnection layer; bonding a second substrate on the surface of the adhesion layer; planarizing the back of the first substrate by removing the first substrate from the back side thereof and the bottom of the trench; and forming a fourth insulating film on the back of the first substrate, and forming a third interconnection layer on the fourth insulating film.
Claim 3
Dependent Claim
46 words
A process for fabricating a semiconductor device as claimed in claim 1, wherein the step of forming a first insulating film comprises forming a gate insulating film, and the step of forming a first interconnection layer comprises forming a gate electrode by patterning a conductive film.
Claim 4
Dependent Claim
30 words
A process for fabricating a semiconductor device as claimed in claim 2, wherein the process further comprises forming a source/drain region on the first substrate after forming the gate electrode.
Claim 5
Dependent Claim
43 words
A process for fabricating a semiconductor device as claimed in claim 1, wherein the step of forming a second insulating film further comprises forming a second insulating film on the entire surface of the first substrate and patterning the resulting second insulating film.
Claim 6
Dependent Claim
43 words
A process for fabricating a semiconductor device as claimed in claim 1, wherein the process for forming the adhesion layer comprises planarizing the surface by forming a polysilicon layer on the third insulating film and polishing the surface of the resulting polysilicon layer.
Claim 7
Dependent Claim
41 words
A process for fabricating a semiconductor device as claimed in claim 1, wherein the step of forming a fourth insulating film comprises forming a fourth insulating film over the back of the first substrate and patterning the resulting fourth insulating film.