Semiconductor device manufacturing method and projection exposure apparatus using the same

Claim 1

A projection exposure method for an original having a light-diffractive pattern, said method comprising the steps of: providing an original having a grating-like pattern of opaque and light-transmissive areas, the grating-like pattern having a partially isolated pattern and an auxiliary pattern, the partially isolated pattern being a pattern having, on at least one side thereof, no adjacent pattern other than an auxiliary pattern within a range of D≦(λ/NA), where λ is a wavelength of illuminating light, NA is a numerical aperture of an optical system and D is a distance from one side of the partially isolated pattern measured on an image plane, and the auxiliary pattern having a line width L which satisfies the relation L≦0.2(λ/NA) and extending in a direction parallel to at least a portion of the partially isolated pattern, the auxiliary pattern being provided at a distance S from the one side of the partially isolated pattern in a direction substantially perpendicular to the one side, where S is within a range of 0≦S≦0.1(λ/NA); illuminating obliquely the original with a light beam having a main wavelength λ; and projecting a portion of light diffracted by the grating-like pattern onto a pupil plane of a projection optical system having a numerical aperture NA, to project the grating-like pattern onto the image plane.