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US5585290A
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Method of manufacturing a thin film transistor substrate
Assignee: Panasonic Liquid Crystal Display Co Ltd
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Filing: 1993-11-29
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Granted: 1996-12-17
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Expires: 2013-11-29
Abstract
Abstract The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel and, more in particular, it relates to a structure and a manufacturing method which enables to improve the characteristics thereof. In the present invention, Cr or Ta is used for gate terminals, aluminum or a metal mainly composed of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance) and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In a more preferred structure, the anodic oxidized film is used for all of the gate insulators, the dielectric films for the thin film capacitances and the interlayer insulation films for the intersections between the bus-lines.
Inventors
- 👤 Hideaki Yamamoto
- 👤 Haruo Matsumaru
- 👤 Yasuo Tanaka
- 👤 Ken Tsutsui
- 👤 Toshihisa Tsukada
- 👤 Kazuo Shirahashi
- 👤 Akira Sasano
- 👤 Yuka Matsukawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:57
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/136286; G02F1/1333; G02F1/1345; G02F1/136213; H; H10; H10D; H10D30/00; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6739
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
122 words
A method of manufacturing a thin film transistor substrate comprising a first step of forming a gate terminal made of chromium or tantalum on a substrate, a second step of forming a gate bus-line pattern comprising: (1) gate bus-line, to be connected with said gate terminal, (2) a gate electrode of a thin film transistor and (3) a thin film capacitance, of aluminum or a metal mainly composed of aluminum, a third step of covering said gate terminal and a connection portion between said gate terminal and said gate bus-line with a photoresist, and a fourth step of anodically oxidizing said gate bus-line pattern and rendering the surface of a first portion of said gate bus-line pattern into an anodic oxidized film.
Claim 2
Independent Claim
122 words
A method of manufacturing a thin film transistor substrate comprising a first step of forming a gate terminal made of chromium or tantalum on a substrate, a second step of forming a gate bus-line pattern comprising: (1) gate bus-line, to be connected with said gate terminal, (2) a gate electrode of a thin film transistor and (3) a thin film capacitance, of aluminum or a metal mainly composed of aluminum, a third step of covering said gate terminal and a connection portion between said gate terminal and said gate bus-line with a photoresist, and a fourth step of anodically oxidizing said gate bus-line pattern and rendering the surface of a first portion of said gate bus-line pattern into an anodic oxidized film.
Claim 3
Dependent Claim
36 words
A method of manufacturing a thin film transistor substrate as defined in claim 1, wherein the fourth step includes a step of conducting anodic oxidation at a constant current and anodic oxidation at a constant voltage.
Claim 4
Dependent Claim
65 words
A method of manufacturing a thin film transistor substrate as defined in claim 1, wherein the gate bus-line pattern comprises two or more patterns the respective portions of which constituting them are electrically connected on every first portion and not connected to each other on every second portion and the fourth step conducts the anodic oxidation at a different voltage on each of the patterns.
Claim 5
Dependent Claim
36 words
A method of manufacturing a thin film transistor substrate as defined in claim 1, wherein the metal mainly composed of aluminum is a metal comprising aluminum as the essential ingredient and also containing Pd or Si.
Claim 6
Dependent Claim
65 words
A method of manufacturing a thin film transistor substrate as defined in claim 1, wherein the first portion to be formed with the anodic oxidized film at the surface by the fourth step is at least are from the group consisting of the gate electrode of the thin film transistor, the thin film capacitance and a portion of the gate bus-line intersecting a signal bus-line.
Claim 7
Independent Claim
139 words
A method of manufacturing a thin film transistor substrate, comprising steps of (a) forming a pattern, including at least a plurality of gate bus-lines and gate electrodes of a plurality of thin film transistors, of aluminum or a metal mainly composed of aluminum, on an insulative substrate, said pattern having line widths, each line width having a width of less than 20 μm, and (b) anodically oxidizing a first portion of said aluminum or said metal mainly composed of aluminum into an anodic oxidized film, wherein the thickness of the anodic oxidized film is within a range from 1100 to 2200 Å, and the anodic oxidation is conducted to at least one of (1) the gate electrode of the thin film transistor, (2) intersecting portion of the gate bus-line with a signal bus-line and (3) te thin film capacitance.
Claim 8
Independent Claim
139 words
A method of manufacturing a thin film transistor substrate, comprising steps of (a) forming a pattern, including at least a plurality of gate bus-lines and gate electrodes of a plurality of thin film transistors, of aluminum or a metal mainly composed of aluminum, on an insulative substrate, said pattern having line widths, each line width having a width of less than 20 μm, and (b) anodically oxidizing a first portion of said aluminum or said metal mainly composed of aluminum into an anodic oxidized film, wherein the thickness of the anodic oxidized film is within a range from 1100 to 2200 Å, and the anodic oxidation is conducted to at least one of (1) the gate electrode of the thin film transistor, (2) intersecting portion of the gate bus-line with a signal bus-line and (3) te thin film capacitance.
Claim 9
Dependent Claim
31 words
A method of manufacturing a thin film transistor substrate as defined in claim 6, wherein the gate bus-lines each have a width more than 5 μm and less than 20 μm.
Claim 10
Dependent Claim
38 words
A method of manufacturing a thin film transistor substrate as defined in claim 6, wherein the anodic oxidation is performed with a second portion of the aluminum or the metal mainly composed of aluminum covered with a resist.
Claim 11
Dependent Claim
57 words
A method of manufacturing a thin film transistor substrate as defined in claim 8, wherein said resist is provided by forming a layer of a photoresist material overlying the first and second portions of said aluminum or said metal mainly composed of aluminum, and exposing and developing the photoresist material layer so as to form said resist.
Claim 12
Independent Claim
138 words
A method of manufacturing a thin film transistor substrate, comprising steps of (a) forming a pattern, including at least a plurality of gate bus-lines and gate electrodes of a plurality of thin film transistors, of a metal mainly composed of aluminum, on an insulative substrate, wherein the metal mainly composed of aluminum includes Pd or Si within a range of 0.1 to 0.3 atomic %, and (b) anodically oxidizing a first portion of said metal mainly composed of aluminum into an anodic oxidized film, wherein the thickness of the anodic oxidized film is within a range from 1100 to 2200 Å, and the anodic oxidation is conducted to at least one of (1) the gate electrodes of the thin film transistors, (2) intersecting portions of the gate bus-lines with a signal bus-line and (3) a thin film capacitance.
Claim 13
Independent Claim
138 words
A method of manufacturing a thin film transistor substrate, comprising steps of (a) forming a pattern, including at least a plurality of gate bus-lines and gate electrodes of a plurality of thin film transistors, of a metal mainly composed of aluminum, on an insulative substrate, wherein the metal mainly composed of aluminum includes Pd or Si within a range of 0.1 to 0.3 atomic %, and (b) anodically oxidizing a first portion of said metal mainly composed of aluminum into an anodic oxidized film, wherein the thickness of the anodic oxidized film is within a range from 1100 to 2200 Å, and the anodic oxidation is conducted to at least one of (1) the gate electrodes of the thin film transistors, (2) intersecting portions of the gate bus-lines with a signal bus-line and (3) a thin film capacitance.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1999-12-17 | 2000-06-17 | 2000-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-17 | 2004-06-17 | 2004-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-17 | 2008-06-17 | 2008-12-17 | $7700.00 | Window Closed / Lapsed |