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US5583379A Expired / Lapsed US ⏱️ 0.0 years remaining

Outer lead for a semiconductor IC package having individually annealed plated layers

Assignee: Niterra Co Ltd
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Filing: 1995-08-14
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Granted: 1996-12-10
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Expires: 2015-08-14
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Abstract

Abstract An outer lead having a plurality of external leads 1 for electrically connecting the semiconductor IC of a semiconductor IC package to external devices comprises a base plate 11, a plated base structure formed over the surface of the base plate 11 and consisting of a plurality of plated base layers 12, 13 and 14 of Ni or a Ni alloy, and a surface layer 15 of Au or an Au alloy formed over the uppermost plated base layer 14 of the plated base structure. The number of the plated base layers is at least three. Each plated base layer 12, 13 and 14 of the plated base structure is subjected to crystal-growth annealing after being formed by plating to crystal-grow the grains thereof. A method of fabricating such an outer lead is provided.

Inventors

  • 👤 Kazuhisa Sato
  • 👤 Kazuo Kimura

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-02 17:34
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/456; H10W70/457

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 107 words
An external terminal for an IC package, comprising: a base plate; a plated base structure formed over the surface of said base plate and comprising at least three plated and annealed base layers, the total thickness of said plated base layers being at least 3 μm, each of said plated base layers having a dense recrystallized grain structure produced by an annealing process that promotes the growth of grains of the plated base layers, said annealing process being conducted individually on each of said at least three plated base layers after its formation; and a surface layer formed over an uppermost one of said plated base layers.
Claim 2
Dependent Claim 107 words
An external terminal for an IC package, comprising: a base plate; a plated base structure formed over the surface of said base plate and comprising at least three plated and annealed base layers, the total thickness of said plated base layers being at least 3 μm, each of said plated base layers having a dense recrystallized grain structure produced by an annealing process that promotes the growth of grains of the plated base layers, said annealing process being conducted individually on each of said at least three plated base layers after its formation; and a surface layer formed over an uppermost one of said plated base layers.
Claim 3
Dependent Claim 21 words
The outer lead according to claim 1, wherein said plated base layers are formed of nickel (Ni) or a nickel alloy.
Claim 4
Dependent Claim 20 words
The outer lead according to claim 1, wherein said surface layer is formed of gold (Au) or a gold alloy.
Claim 5
Dependent Claim 33 words
The outer lead according to claim 1, wherein said base plate is formed of a material having a thermal expansion coefficient substantially equal to that of said package of said semiconductor IC package.
Claim 6
Dependent Claim 24 words
The outer lead according to claim 4, wherein said package is formed of alumina and said base plate is formed of a Fe/Ni alloy.
Claim 7
Dependent Claim 29 words
The outer lead according to claim 1, wherein a package type of said semiconductor IC package is one of a flat package type and a pin grid array type.
Claim 8
Dependent Claim 120 words
An external terminal for an IC package, comprising: a base plate; a plated base structure formed over the surface of said base plate and comprising at least three plated and annealed base layers of nickel (Ni) or a nickel alloy, the total thickness of said plated base layers being at least 3 μm, each of said plated base layers having a dense recrystallized grain structure produced by an annealing process that promotes growth of grains of the plated base layers, said annealing process being conducted individually on each of said at least three plated base layers after its formation; and a surface layer of gold (Au) or a gold alloy, formed over an uppermost one of said plated base layers.
Claim 9
Dependent Claim 120 words
An external terminal for an IC package, comprising: a base plate; a plated base structure formed over the surface of said base plate and comprising at least three plated and annealed base layers of nickel (Ni) or a nickel alloy, the total thickness of said plated base layers being at least 3 μm, each of said plated base layers having a dense recrystallized grain structure produced by an annealing process that promotes growth of grains of the plated base layers, said annealing process being conducted individually on each of said at least three plated base layers after its formation; and a surface layer of gold (Au) or a gold alloy, formed over an uppermost one of said plated base layers.
Claim 10
Dependent Claim 33 words
The outer lead according to claim 7, wherein said base plate is formed of a material having a thermal expansion coefficient substantially equal to that of said package of said semiconductor IC package.
Claim 11
Dependent Claim 24 words
The outer lead according to claim 7, wherein said package is formed of alumina, and said base plate is formed of a Fe/Ni alloy.
Claim 12
Dependent Claim 29 words
The outer lead according to claim 7, wherein a package type of said semiconductor IC package is one of a flat package type and a pin grid array type.

References Cited (Backward Citations)

JPS58104193A Cited
JPS58147581A Cited
JPS6046769A Cited
US5010388A Cited
JPH01302844A Cited
JPH0217662A Cited
JPH02104647A Cited
JPH03270260A Cited
JPH04294009A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1999-12-10 2000-06-10 2000-12-10 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2003-12-10 2004-06-10 2004-12-10 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2007-12-10 2008-06-10 2008-12-10 $7700.00 Window Closed / Lapsed

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