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US5583072A
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US
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Method of manufacturing a monolithic linear optocoupler
Assignee: Infineon Technologies North America Corp
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Filing: 1995-06-30
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Granted: 1996-12-10
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Expires: 2015-06-30
Abstract
Abstract A method of making a monolithic structure for an optocoupler that provides improved linearity. The method includes forming an output signal photodiode and a feedback control signal photodiode on a single chip with an LED. The photodiodes are configured and positioned relative to the LED to compensate for any non-uniformities in the light received from the LED.
Inventors
- 👤 David Whitney
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 02:16
CPC Classifications
H; H10; H10F; H10F55/00; H10F55/20; H10F55/25; H10F55/255; H10W; H10W10/00; H10W10/01; Y; Y10; Y10S; Y10S148/00; Y10S148/012
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
110 words
A method for fabricating a monolithic semiconductor structure, comprising steps of: (a) etching trenches into an n-type silicon wafer; (b) diffusing an n-type material into the wafer to form an N+ layer; (c) forming a first oxide layer on the N+ layer; (d) depositing a silicon material onto the intermediate structure to fill the trenches and provide mechanical stability; (e) back-lapping the silicon wafer such that portions of the N+ layer are exposed; (f) forming P+ regions, using dielectrically isolated tubs, to cover the exposed portions of the N+ layer; (g) adding a second oxide layer on the P+ regions; and (h) adding a substrate on the second oxide layer.
Claim 2
Independent Claim
110 words
A method for fabricating a monolithic semiconductor structure, comprising steps of: (a) etching trenches into an n-type silicon wafer; (b) diffusing an n-type material into the wafer to form an N+ layer; (c) forming a first oxide layer on the N+ layer; (d) depositing a silicon material onto the intermediate structure to fill the trenches and provide mechanical stability; (e) back-lapping the silicon wafer such that portions of the N+ layer are exposed; (f) forming P+ regions, using dielectrically isolated tubs, to cover the exposed portions of the N+ layer; (g) adding a second oxide layer on the P+ regions; and (h) adding a substrate on the second oxide layer.
Claim 3
Dependent Claim
33 words
The method of claim 1, wherein the step of forming P+ regions comprises forming a first photodiode having a cathode and an anode, and a second photodiode having a cathode and an anode.
Claim 4
Dependent Claim
40 words
The method of claim 2, further comprising the steps of: (i) appropriately etching the silicon material to form voids; (j) applying bond pads and wire leads to the cathodes and anodes of the first and second photodiodes via the voids.
Claim 5
Independent Claim
98 words
A method for fabricating a monolithic semiconductor device, comprising steps of: (a) forming trenches in the top surface of a silicon wafer; (b) forming an N+ region on the top surface of the wafer and the inner surfaces of the trenches; (c) forming a first oxide layer on the N+ region; (d) removing the silicon wafer such that portions of the N+ region are exposed; (e) forming P+ regions that cover the exposed portions of the N+ region; (f) adding a second oxide layer on the P+ regions; and (g) adding a substrate on the second oxide layer.
Claim 6
Independent Claim
98 words
A method for fabricating a monolithic semiconductor device, comprising steps of: (a) forming trenches in the top surface of a silicon wafer; (b) forming an N+ region on the top surface of the wafer and the inner surfaces of the trenches; (c) forming a first oxide layer on the N+ region; (d) removing the silicon wafer such that portions of the N+ region are exposed; (e) forming P+ regions that cover the exposed portions of the N+ region; (f) adding a second oxide layer on the P+ regions; and (g) adding a substrate on the second oxide layer.
Claim 7
Dependent Claim
33 words
The method of claim 4, wherein the step of forming P+ regions comprises forming a first photodiode having a cathode and an anode, and a second photodiode having a cathode and an anode.
Claim 8
Dependent Claim
24 words
The method of claim 5, further comprising the step of providing electrical connections to the cathodes and anodes of the first and second photodiodes.
Claim 9
Dependent Claim
22 words
The method of claim 6, further comprising the step of forming a light emitting diode on the upper surface of the device.
Claim 10
Dependent Claim
34 words
The method of claim 7, further comprising the step of affixing an optically transparent dome over the upper surface of the device that has a reflective layer facing the upper surface of the device.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1999-12-10 | 2000-06-10 | 2000-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2003-12-10 | 2004-06-10 | 2004-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2007-12-10 | 2008-06-10 | 2008-12-10 | $7700.00 | Window Closed / Lapsed |