Method of manufacturing a dielectric isolation substrate

Abstract

Abstract According to this invention, there is provided a method of manufacturing a semiconductor device, including the steps of anisotropically etching a surface of an n-type monocrystalline silicon substrate having the (100) plane to form a V-shaped isolation groove having a depth d 1 , performing ion implantation and performing annealing and diffusion to a surface of the V-shaped isolation groove to form an n + -type buried layer, depositing a silicon dioxide film having a thickness d 2 on a surface of the n + -type buried layer, forming a polycrystalline silicon film on a surface of the silicon dioxide film, abrading and polishing the polycrystalline silicon film to have a thickness d 3 , adhering a monocrystalline silicon support substrate having a thickness d 4 to a polished surface of the polycrystalline silicon film at room temperature in the atmospheric air, abrading and polishing a lower surface of the n-type monocrystalline silicon substrate having the V-shaped isolation groove to expose the silicon dioxide film at a bottom portion of the V-shaped isolation groove on the lower surface and to form an island-like monocrystalline silicon film, wherein the thicknesses d 1 , d 2 , d 3 , and d 4 are set to be 50 to 60 μm, 1 to 3 μm, 0 to 30 μm, and 350 to 450 μm, respectively.

Inventors

• 👤 Kensuke Okonogi
• 👤 Tsukasa Ohoka

Bibliographic Details