Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To omit long-time forming of a polysilicon layer and to prevent warping of a semiconductor substrate, by forming the polysilicon layer as thin as possible, bonding the layer to a separately prepared substrate, and polishing the substrate. CONSTITUTION:A semiconductor substrate 1 is etched. After an oxide film is removed, an impurity diffused layer 3 is formed on the entire recess and protruding parts of the silicon substrate 1. An oxide film 4 is formed thereon. After a polysilicon layer 5 is formed thereon, the surface is lightly polished. An oxide film 6 is formed on the surface, and PSG 7 is formed. Meanwhile, an oxide film 9 and PSG 10 are similarly formed on a silicon substrate 8. The PSG 7 and the PSG 10 are contacted and high temperature treatment is performed. Then the PSG films are bonded through an oxide film 11. The substrate is inverted and polished. Then a semiconductor device, which is isolated with the oxide film 4 that is to become an insulating layer, is manufactured. Thus the time required for forming the polysilicon layer can be shortened. Therefore the warping of the semiconductor substrate due to the effect of heat can be prevented.

Inventors

• 👤 Masao Yoshizawa
• 👤 吉澤　正夫
• 👤 Masaaki Ikegami
• 👤 雅明 池上

Bibliographic Details